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Book THE LOW TEMPERATURE THERMAL CHEMICAL VAPOR DEPOSITION AND CATALYZED CHEMICAL VAPOR DEPOSITION OF ALUMINUM NITRIDE AND SILICON NITRIDE CHEMICAL VAPOR DEPOSITION

Download or read book THE LOW TEMPERATURE THERMAL CHEMICAL VAPOR DEPOSITION AND CATALYZED CHEMICAL VAPOR DEPOSITION OF ALUMINUM NITRIDE AND SILICON NITRIDE CHEMICAL VAPOR DEPOSITION written by JEFFREY L. DUPUIE and published by . This book was released on 1991 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: deposition scheme holds much promise for low temperature film growth.

Book Chemical Vapor Deposition of Aluminum for Electronic Materials

Download or read book Chemical Vapor Deposition of Aluminum for Electronic Materials written by Michael G. Simmonds and published by . This book was released on 1993 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Numerical Investigation of Pulsed Chemical Vapor Deposition of Aluminum Nitride

Download or read book Numerical Investigation of Pulsed Chemical Vapor Deposition of Aluminum Nitride written by Derek Endres and published by . This book was released on 2010 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The Metal Organic Vapor Phase Epitaxy (MOVPE) of Aluminum Nitride (AlN) results not only in the growth of an AlN thin film, but also in the growth of AlN particles suspended in the gas-phase. Particle formation of AlN is unique to the MOVPE of AlN because the bond strength of AlN (11.5eV) is much larger than that of other III-V materials. This study numerically examined the effect of pulsing the precursor gases on the MOVPE of AlN as a way to curb AlN particle formation, in both horizontal and vertical reactors. Pulsing parameters such as pulse width, pulse duration, and precursor gas flow rate were varied to see the effect on growth rate and particle formation. The numerical predictions show AlN particle formation decreases significantly as the length of carrier gas pulse width increases and the deposition rate of substrate AlN can stay at approximately the same value as the steady state value with increased precursor gas flow rates. Therefore, if pulsing is introduced with relatively large carrier gas pulse width and increased precursor gas flow rates the AlN particle formation would be minimized while keeping the growth rate more or less unaffected. Numerical results also showed that pulsing has the added benefit that it increased the average growth rate (compared to steady state growth rates) because the precursors are not wasted as particles.

Book Modeling of Chemical Reactions

Download or read book Modeling of Chemical Reactions written by R.W. Carr and published by Elsevier. This book was released on 2007-09-04 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modeling of Chemical Reactions covers detailed chemical kinetics models for chemical reactions. Including a comprehensive treatment of pressure dependent reactions, which are frequently not incorporated into detailed chemical kinetic models, and the use of modern computational quantum chemistry, which has recently become an extraordinarily useful component of the reaction kinetics toolkit. It is intended both for those who need to model complex chemical reaction processes but have little background in the area, and those who are already have experience and would benefit from having a wide range of useful material gathered in one volume. The range of subject matter is wider than that found in many previous treatments of this subject. The technical level of the material is also quite wide, so that non-experts can gain a grasp of fundamentals, and experts also can find the book useful. A solid introduction to kinetics Material on computational quantum chemistry, an important new area for kinetics Contains a chapter on construction of mechanisms, an approach only found in this book

Book Thermal and Dynamic Processes in Deposition Growth and Etching of Materials

Download or read book Thermal and Dynamic Processes in Deposition Growth and Etching of Materials written by Shrikant Prabhakar Lohokare and published by . This book was released on 1996 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposition (CVD) is becoming an increasingly important manufacturing process for the fabrication of VLSI and ULSI devices. A major challenge in optimizing a CVD process is developing an understanding of the complex mechanistic pathways followed. The first section in this thesis reports studies on the thermal and dynamical activation of surface bound alkyl species which play a vital role in the form of intermediates in metal-organic chemical vapor deposition. The particular systems of interest are those of aluminum CVD precursors. Models of these intermediates are obtained by thermal decomposition of alkyl iodides. The results provide an insight into the complex reaction patterns involved in the thermal reactions and rate-structure sensitivities of the alkyl species in the presence of the coadsorbed halogen atom. Multiple reaction pathways including metal etching processes which bear direct implications to the synthesis of organometallics and metal etching, are identified. It is becoming apparent that chemistry at surfaces, whether it be heterogeneous catalysis, semiconductor etching, or chemical vapor deposition, is controlled by much more than the nature and structure of the surface. Also, nonthermal activation of autocatalytic reactions is often required for the nucleation and growth of thin films in devices so that the stability of the device structure is maintained. Dynamical pathways followed in these high pressure and energy processes have to be well understood. The second part of these studies describe an investigation of collision-induced reaction of alkyl intermediates using supersonic inert gas atomic beams. Selective activation of a thermodynamically favored unimolecular decomposition reaction is initiated by hyperthermal collisions. Quantitative estimations of the reaction cross sections are made using straightforward hard sphere energy transfer dynamics. This successful demonstration of collision-induced activation of large, multiatomic moieties has paved the way for proposed studies (now underway in our group) on actual CVD precursors with known barriers to nucleation and growth. In the second section, the reaction mechanisms and kinetics of competitive dissociation, disproportionation, and thin film growth processes involved in the chemical vapor deposition of metal-silicide thin films are investigated. Metal-silicides are widely used as interconnect and gate materials in devices and also as corrosion resistant materials. Reactivity of silane and disilane with copper is studied in detail using temperature programmed reaction, Auger electron, Fourier transform infrared reflection absorption spectroscopies and low energy electron diffraction. For both the precursors, the structural chemistry and product distributions of adsorbed intermediates found at low temperatures are quite rich but significantly differ at the mechanistic level. It is shown quantitatively that disilane is almost 2-3 orders of magnitude more reactive than silane due to its facile Si-Si bond dissociation. However, in both cases, kinetics of silicon deposition and silicide formation are limited by the site-blocking effect of surface bound hydrogen generated by the decomposition of the silyl fragments. An ordered silicide overlayer is readily formed at higher coverages effected above dihydrogen desorption temperatures. This bimolecular process has to compete with an associative reaction which leads to the formation of silane. The results obtained from the different spectroscopic data show that the growth process involves an intriguing set of coupled reactions in which deposition, island growth, and Si etching effectively compete in a complex manner. Understanding of these parameters and the reaction mechanisms involved, enables the application of this process for the vapor phase growth of silicide thin films.

Book Metalorganic Chemical Vapor Deposition of Aluminum Nitride

Download or read book Metalorganic Chemical Vapor Deposition of Aluminum Nitride written by Herng Liu and published by . This book was released on 1995 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Dissertation Abstracts International

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Studies of Gas Phase Reactions Nucleation and Growth Mechanisms of Plasma Promoted Chemical Vapor Deposition of Aluminum Using Dimethylethylamine Alane as Source Precursor

Download or read book Studies of Gas Phase Reactions Nucleation and Growth Mechanisms of Plasma Promoted Chemical Vapor Deposition of Aluminum Using Dimethylethylamine Alane as Source Precursor written by Andreas H. Knorr and published by . This book was released on 1998 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Coatings and Thin Film Technologies

Download or read book Coatings and Thin Film Technologies written by Jaime Andres Perez Taborda and published by BoD – Books on Demand. This book was released on 2019-01-03 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of coatings and thin-film technologies is rapidly advancing to keep up with new uses for semiconductor, optical, tribological, thermoelectric, solar, security, and smart sensing applications, among others. In this sense, thin-film coatings and structures are increasingly sophisticated with more specific properties, new geometries, large areas, the use of heterogeneous materials and flexible and rigid coating substrates to produce thin-film structures with improved performance and properties in response to new challenges that the industry presents. This book aims to provide the reader with a complete overview of the current state of applications and developments in thin-film technology, discussing applications, health and safety in thin films, and presenting reviews and experimental results of recognized experts in the area of coatings and thin-film technologies.