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Book An EPR and Endor Study on Defects in Silicon

Download or read book An EPR and Endor Study on Defects in Silicon written by Eric Gerard Sieverts and published by . This book was released on 1947 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book An Epr and Endor Study on Defects in Silicon

Download or read book An Epr and Endor Study on Defects in Silicon written by E.G. Sieverts and published by . This book was released on 1978 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book   An    EPR  Electron Paramagnetic Resonance  and ENDOR Study on defects in silicon

Download or read book An EPR Electron Paramagnetic Resonance and ENDOR Study on defects in silicon written by Eric Gerard Sieverts and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3  1996

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Dopants and Defects in Semiconductors  Second Edition

Download or read book Dopants and Defects in Semiconductors Second Edition written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Book Identification of Defects in Semiconductors

Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-07-02 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Book Dopants and Defects in Semiconductors

Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.

Book Science and Technology of Defects in Silicon

Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.

Book Optical Absorption of Impurities and Defects in Semiconducting Crystals

Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

Book Applications of EPR in Radiation Research

Download or read book Applications of EPR in Radiation Research written by Anders Lund and published by Springer. This book was released on 2014-10-20 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of EPR in Radiation Research is a multi-author contributed volume presented in eight themes: I. Elementary radiation processes (in situ and low temperature radiolysis, quantum solids); II: Solid state radiation chemistry (crystalline, amorphous and heterogeneous systems); III: Biochemistry, biophysics and biology applications (radicals in biomaterials, spin trapping, free-radical-induced DNA damage); IV: Materials science (polymeric and electronic materials, materials for treatment of nuclear waste, irradiated food); V: Radiation metrology (EPR-dosimetry, retrospective and medical applications); VI: Geological dating; VII: Advanced techniques (PELDOR, ESE and ENDOR spectroscopy, matrix isolation); VIII: Theoretical tools (density-functional calculations, spectrum simulations).

Book EPR Studies on Quenched In Defects in Silicon

Download or read book EPR Studies on Quenched In Defects in Silicon written by Young Hoon Lee and published by . This book was released on 1979 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Early Stages of Oxygen Precipitation in Silicon

Download or read book Early Stages of Oxygen Precipitation in Silicon written by R. Jones and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 535 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

Book Foundations of Modern EPR

Download or read book Foundations of Modern EPR written by Gareth R. Eaton and published by World Scientific. This book was released on 1998 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception 50 years ago, electron paramagnetic resonance (EPR, also called ESR or EMR) has become a major tool in diverse fields ranging from biology and chemistry to solid state physics and materials science. This important book includes personal descriptions of early experiments by pioneers who laid the foundations for the field, perspectives on the state of the art, and glimpses of future opportunities. It presents a broad view of the foundations of EPR and its applications, and will therefore appeal to scientists in many fields. Even the expert will find here history not previously recorded and provocative views of future directions.

Book Intrinsic Point Defects  Impurities  and Their Diffusion in Silicon

Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Book Defects in Microelectronic Materials and Devices

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Book Nuclear Science Abstracts

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 1288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: