Download or read book Analysis of Aluminum Nitride AlN and Graded Aluminum Gallium Nitride AlgaN Thin Film Structures written by Phaneendra Bandaru and published by . This book was released on 2005 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Fabrication of Aluminum Gallium Nitride written by Kenneth Kanin Chu and published by . This book was released on 2000 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication Performance and Degradation Mechanism of Aluminium i e Aluminum Gallium Nitride gallium Nitride Heterostructure Field Effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Aluminum Gallium Nitride written by Lee S. McCarthy and published by . This book was released on 2001 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characteristics Optimization and Integrated Circuit Applications of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Bruce McRae Green and published by . This book was released on 2001 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Vinayak Tilak and published by . This book was released on 2002 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Undoped Aluminum Gallium Nitride gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Charge Instability and Localization in Aluminum Gallium Nitride gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy written by Goutam Koley and published by . This book was released on 2003 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Aluminum Gallium Nitride written by David DiSanto and published by . This book was released on 2005 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last decade, All-, GaXN/GaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their intrinsic electrical properties make them attractive for high power microwave device applications. Despite much progress, current slump continues to be a problem, limiting output power, reducing reliability, and complicating device modelling. In this work, a complete AĨ-, G, ̃N/GÑ HEMT fabrication procedure was developed, and electrical characteristics related to current slump, microwave modelling, and delay time analysis were explored. Low resistance ohmic contacts were achieved, enabling high channel current densities. Schottky contacts were developed with a new ion implant isolation architecture, enabling gate leakage currents 2 to 4 orders of magnitude lower than typical results from the literature. Through pulsed current-voltage measurements, the importance of bias stresses in the gate-source region was demonstrated for the first time. In contrast to the conventional "virtual gate" model, gate-source stresses were shown to be more important than gatedrain stresses when biased near threshold. Slow slump transients were studied by passivating transistor surfaces with ultrathin layers. These results excluded dielectric strain and electron injection reduction as viable passivation mechanisms. A novel model was proposed associating slow slump behaviour with trapping of many electrons at screw dislocation sites. The effect of slump on RF properties was examined through microwave measurements by extracting the parasitic source and drain resistances without special biasing. Besides significantly improving the accuracy of small-signal modelling, we were able to show the bias dependence of parasitic resistances which confirmed the effect of source-side bias stressing. The question of channel electron velocities in nitride transistors remains controversial. We determined an effective electron velocity of - 1.9 x 1 o7 cmls through two methods. We first extracted effective velocities through delay time analysis, and then through the small-signal model elements. To our knowledge, this was the first time an equivalent model extraction led to self-consistent electron velocity values for nitride transistors. Finally, our equivalent circuit model showed the correct interrelation between frequency response and access resistances. The cohesive picture of current slump, equivalent circuit model extraction, and delay time analysis gives a high degree of confidence in these results.
Download or read book Characterization of Aluminum Gallium Nitride Epitaxial Layers written by Usha Kalyani Parasuraman and published by . This book was released on 2003 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication of Aluminum Gallium Nitride Gallium Nitride MESFET And It s Applications in Biosensing written by Siddharth Alur and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Processing Techniques for Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Defects in Electron irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy written by Michael R. Hogsed and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Aluminum Gallium Nitride gallium Nitride Ultraviolet P I N Photodetectors written by Shamima Afroz and published by . This book was released on 2007 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Aluminum Gallium Nitride gallium Nitride Polarization Barriers Aluminum Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors and Polarization based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Aluminum Gallium Nitride gallium Nitride Modulation Doped Field Effect Transistors written by Ozgur Aktas and published by . This book was released on 1997 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optoelectronic Properties of Aluminum Gallium Nitride written by Erik Laker Waldron and published by . This book was released on 2003 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
