Download or read book Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials written by and published by . This book was released on 1991 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strained layer GaInAs/GaAs heterostructures for improved high frequency high performance as a result of strained modified valence band structure continue to be investigated. The first demonstration of improved microwave frequency bandwidths arose from increased differential gain for single strained quantum well structures. Optimized single quantum well growth is therefore undertaken to initiate the development of multiple quantum well lasers in 1990 to further increase differential gain. Properties of strained GaInAs on InP have also been studied. A first attempt to grow and fabricate a laser on InP has been successful, thus opening the opportunity to investigate strained lasers on InP. A first look into the theoretical properties of strained quantum wells has begun.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials Science and Technology Strained Layer Superlattices written by and published by Academic Press. This book was released on 1991-02-20 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book Expanding the Vision of Sensor Materials written by Committee on New Sensor Technologies: Materials and Applications and published by National Academies Press. This book was released on 1995-07-06 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in materials science and engineering have paved the way for the development of new and more capable sensors. Drawing upon case studies from manufacturing and structural monitoring and involving chemical and long wave-length infrared sensors, this book suggests an approach that frames the relevant technical issues in such a way as to expedite the consideration of new and novel sensor materials. It enables a multidisciplinary approach for identifying opportunities and making realistic assessments of technical risk and could be used to guide relevant research and development in sensor technologies.
Download or read book Frontiers In Electronics Selected Papers From The Workshop On Frontiers In Electronics 2013 Wofe 2013 written by Sorin Cristoloveanu and published by World Scientific. This book was released on 2014-12-15 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.
Download or read book High Speed Diode Lasers written by Sergei A. Gurevich and published by World Scientific. This book was released on 1998 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is composed of seven invited papers which present the current status of high speed diode lasers. Fast carrier and photon dynamics in directly modulated MQW lasers is analyzed and novel design approaches are considered which were critical for the demonstration and record of 40 GHz modulation bandwidth. Attention is centered on the challenges in creation of high speed and low chirp single mode DFB lasers. Recent progress in mode-locked diode lasers is covered, specifically by the examples of 160 fs pulse generation and appearance of microwave pulse repetition rates. Future trends in increasing of high speed laser performance are also examined.
Download or read book Physics and Technology of High k Materials 9 written by S. Kar and published by The Electrochemical Society. This book was released on 2011 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Devices and Integrated Circuits written by AJAY KUMAR SINGH and published by PHI Learning Pvt. Ltd.. This book was released on 2011-11-04 with total page 609 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, now in its Second Edition, provides a basis for understanding the characteristics, working principle, operation and limitations of semi-conductor devices. In this new edition, many sections are re-written to present the concepts related to device physics in more clearer and easy to understand manner. The primary objective of this textbook is to provide all the relevant topics on the semiconductor materials and semiconductor devices in a single volume. It includes enough mathematical expressions to provide a good foundation for the basic understanding of the semiconductor devices. It covers not only the state-of-the-art devices but also future approaches that go beyond the current technology. Designed primarily as a text for the postgraduate students of physics and electronics, the book would also be useful for the undergraduate students of electronics and electrical engineering, and electronics and communi-cation engineering. Highlights of the Book : Includes topics on the latest technologies Covers important points in each chapter Provides a number of solved and unsolved problems along with explanation type questions Emphasizes on the mathematical derivation
Download or read book Clean Electricity From Photovoltaics 2nd Edition written by Mary D Archer and published by World Scientific. This book was released on 2014-10-17 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Clean Electricity from Photovoltaics, first published in 2001, provides an updated account of the underlying science, technology and market prospects for photovoltaics. All areas have advanced considerably in the decade since the first edition was published, which include: multi-crystalline silicon cell efficiencies having made impressive advances, thin-film CdTe cells having established a decisive market presence, and organic photovoltaics holding out the prospect of economical large-scale power production.
Download or read book Government Reports Annual Index written by and published by . This book was released on 1994 with total page 1688 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Frontiers In Physics High Technology And Mathematics Ictp 25th Anniversary Conference written by Lundqvist Stig and published by #N/A. This book was released on 1990-08-23 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Centre for Theoretical Physics was founded in 1964 by Prof. Abdus Salam. To celebrate its 25th anniversary, a group of distinguished speakers was assembled to present overviews in Physics, High Technology and Mathematics with a look at the future. This Proceedings serves as a valuable record of this memorable occasion.
Download or read book Introduction to Optical and Optoelectronic Properties of Nanostructures written by Vladimir V. Mitin and published by Cambridge University Press. This book was released on 2019-03-21 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Get to grips with the fundamental optical and optoelectronic properties of nanostructures. This comprehensive guide makes a wide variety of modern topics accessible, and includes up-to-date material on the optical properties of monolayer crystals, plasmonics, nanophotonics, UV quantum well lasers, and wide bandgap materials and heterostructures. The unified, multidisciplinary approach makes it ideal for those in disciplines spanning nanoscience, physics, materials science, and optical, electrical and mechanical engineering. Building on work first presented in Quantum Heterostructures (Cambridge, 1999), this volume draws on years of research and teaching experience. Rigorous coverage of basic principles makes it an excellent resource for senior undergraduates, and detailed mathematical derivations illuminate concepts for graduate students, researchers and professional engineers. The examples with solutions included in the text and end-of-chapter problems allows the students to use this text to enhance their understanding.
Download or read book Strain Induced Effects in Advanced MOSFETs written by Viktor Sverdlov and published by Springer Science & Business Media. This book was released on 2011-01-06 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Download or read book NASA Technical Memorandum written by and published by . This book was released on 1963 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
