Download or read book Physics and Technology of High k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Analysis and Characterization of GaAs MOSFET with High K Dielectric Material written by Krupal Pawar and published by GRIN Verlag. This book was released on 2015-02-11 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scientific Essay from the year 2015 in the subject Engineering - Communication Technology, , course: VLSI Technology, language: English, abstract: Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20€0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.
Download or read book High k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book Dielectrics in Nanosystems and Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 3 written by Zia Karim and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.
Download or read book Atomic Layer Deposition Applications 6 written by J. W. Elam and published by The Electrochemical Society. This book was released on 2010-10 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the focus of this reoccurring symposium. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topographies with controlled thickness and composition. This issue of ECS Transactions contains peer reviewed papers presented at the symposium. A broad spectrum of ALD applications is featured, including novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics, and a variety of other emerging applications.
Download or read book Issues in Electronic Circuits Devices and Materials 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 2454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Electronic Circuits, Devices, and Materials: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Electronic Circuits, Devices, and Materials. The editors have built Issues in Electronic Circuits, Devices, and Materials: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Electronic Circuits, Devices, and Materials in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Electronic Circuits, Devices, and Materials: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Download or read book Advanced Gate Stack Source drain and Channel Engineering for Si based CMOS 3 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2007 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Download or read book Graphene and Emerging Materials for Post CMOS Applications written by Yaw Obeng and published by The Electrochemical Society. This book was released on 2009-05 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.
Download or read book Atomic Layer Deposition Applications 4 written by Ana Londergan and published by The Electrochemical Society. This book was released on 2008 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. This issue of the ECS Transactions contains peer reviewed papers presented at the symposium. Breadths of ALD Applications are featured: novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics and a variety of other emerging applications.
Download or read book Recent Advances in Nanophotonics written by Mojtaba Kahrizi and published by BoD – Books on Demand. This book was released on 2020-11-26 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume brings together several recent research articles in the field of nanophotonics. The editors have arranged the chapters in three main parts: quantum devices, photonic devices, and semiconductor devices. The chapters cover a wide variety of scopes in those areas including principles of plasmonic, SPR, LSPR and their applications, graphene-based nanophotonic devices, generation of entangled photon and quantum dots, perovskite solar cells, photo-detachment and photoionization of two-electrons systems, diffusion and intermixing of atoms in semiconductor crystals, lattice and molecular elastic and inelastic scattering including surface-enhanced Raman Scattering and their applications. It is our sincerest hope that science and engineering students and researchers could benefit from the new ideas and recent advances in the field that are covered in this book.
Download or read book Dielectrics for Nanosystems 4 Materials Science Processing Reliability and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoscale Semiconductors written by Balwinder Raj and published by CRC Press. This book was released on 2022-08-30 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
Download or read book Physics and Technology of High k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Chinese Physics Letters written by and published by . This book was released on 2008 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced MOS Devices and their Circuit Applications written by Ankur Beohar and published by CRC Press. This book was released on 2024-01-19 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: • Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs). • Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications. • Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors. • Includes research problem statements with specifications and commercially available industry data in the appendix. • Presents Verilog-A model-based simulations for circuit analysis. The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.
