Download or read book A Study on the Improvement of GaAs MOS Devices with High k Gate Dielectric written by 劉利寧 and published by . This book was released on 2017 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High k Gate Dielectric GaAs MOS Device with LaON as Interlayer and NH3 plasma Surface Pretreatment Project Supported by the National Natural Science Foundation of China Grant Nos 61176100 and 61274112 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: High- k gate dielectric HfTiON GaAs metal-oxide–semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3 - or N2 -plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3 -plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3 -plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high- k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high- k /GaAs interface.

Download or read book Physics and Technology of High k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Download or read book III V Channel MOS Devices with Atomic layer deposited High k Gate Dielectrics written by Davood Shahrjerdi and published by . This book was released on 2008 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been historically achieved through shrinking the gate length of transistors for over four decades. Addressing the current challenges with CMOS scaling, the 2005 edition of International Technology Roadmap for Semiconductors has predicted the need for so-called technology boosters involving new materials for the gate dielectric and the channel as well as innovative structures. Theoretical studies suggest that the incorporation of high-mobility channel materials such as germanium and III-Vs could outperform bulk Si technology in terms of switching characteristics. Hence, this has recently led to tremendous research activity to explore the prospects of III-V materials for CMOS applications. Nevertheless, technological challenges such as formation of highquality interface between gate dielectric and III-V channel have hindered the demonstration of enhancement-mode III-V MOSFETs. Hence, tremendous effort has been devoted to study the exact origin of Fermi level pinning at the oxide/III-V interface. On the other hand, the advent of high-k materials has opened up the possibility of exploring new channel materials, for which it is challenging to achieve high-quality interface analogous to that of SiO2 on Si. Lately, III-Vs have been extensively explored in order to find compatible gate dielectrics which can unpin the Fermi level at the interface. Amongst various schemes, atomic layer deposition of high-k dielectrics offers some unique advantages such as reduction of GaAs interfacial oxides upon high-k deposition through an appropriate choice of precursor chemistry. The chief focus of this dissertation is to develop a simple wet clean process prior to high-k deposition, suitable for III-V substrates. The impact of various chemical treatments of GaAs substrates on the properties of high-k/GaAs interface was studied through extensive material and electrical characterization methods. The suitability of the ALD-grown high-k gate dielectrics on GaAs for MOSFET fabrication was explored. Charge trapping was found to result in significant errors in mobility extraction in high-k GaAs interface, where the role of high-k is not well understood. Hence, pulsed I-V and QV measurements and galvanomagnetic effects were utilized in order to directly measure the inversion charge in the channel without being affected by the charge traps as much as possible. It was also found that the material studies on GaAs substrates can be readily extended to other III-V channels, such as InGaAs.

Download or read book Analysis and Characterization of GaAs MOSFET with High K Dielectric Material written by Krupal Pawar and published by GRIN Verlag. This book was released on 2015-02-11 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scientific Essay from the year 2015 in the subject Engineering - Communication Technology, , course: VLSI Technology, language: English, abstract: Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20€0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.

Download or read book Atomic Layer Deposited Beryllium Oxide as a Gate Dielectric Or Interfacial Layer for Si and III V MOS Devices written by Jung Hwan Yum and published by . This book was released on 2012 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous improvement in the semiconductor industry has been successfully achieved by the reducing dimensions of CMOS (complementary metal oxide semiconductor) technology. For the last four decades, the scaling down of physical thickness of SiO2 gate dielectrics has improved the speed of output drive current by shrinking of transistor area in front-end-process of integrated circuits. A higher number of transistors on chip resulting in faster speed and lower cost can be allowable by the scaling down and these fruitful achievements have been mainly made by the thinning thickness of one key component - Gate Dielectric - at Si based MOSFET (metal-oxide-semiconductor field effect transistor) devices. So far, SiO2 (silicon dioxide) gate dielectric having the excellent material and electrical properties such as good interface (i.e., Dit ~ 2x1010 eV−1cm−2), low gate leakage current, higher dielectric breakdown immunity (≥10MV/cm) and excellent thermal stability at typical Si processing temperature has been popularly used as the leading gate oxide material. The next generation Si based MOSFETs will require more aggressive gate oxide scaling to meet the required specifications. Since high-k dielectrics provide the same capacitance with a thicker film, the leakage current reduction, therefore, less the standby power consumption is one of the huge advantages. Also, it is easier to fabricate during the process because the control of film thickness is still not in the critical range compared to the same leakage current characteristic of SiO2 film. HfO2 based gate dielectric is considered as the most promising candidate among materials being studied since it shows good characteristics with conventional Si technology and good device performance has been reported. However, it has still many problems like insufficient thermals stability on silicon such as low crystallization temperature, low k interfacial regrowth, charge trapping and so on. The integration of hafnium based high-k dielectric into CMOS technology is also limited by major issues such as degraded channel mobility and charge trapping. One approach to overcome these obstacles is using alternative substrate materials such as SiGe, GaAs, InGaAs, and InP to improve channel mobility. High electron mobility in the III-V materials has attracted significant attention for a possible application as a channel material in metal/oxide/semiconductor (MOS) transistors. One of the main challenges is that III-V MOSFETs generally lack thermodynamically stable insulators of high electrical quality, which would passivate the interface states at the dielectric/substrate interface and unpin the Fermi level. To address this issue, various dielectric, such as Si/SiO2, Ge, SiGe, SiN and Al2O3, were considered as an interface passivation layer (IPL). Atomic Layer Deposited (ALD) Al2O3 has demonstrated superior IPL characteristics compared to the other candidates due to its high dielectric constant and interface quality. However, defect density in Al2O3 is still too high even as several cleaning methods such as NH4OH, (NH4)2S and F treatment have been developed, which limits the performance of III-V MOSFETs. In the first part of this study, theoretical approaches to understand the motivation and requirements as an high-k gate dielectric or interfacial layer, and properties of ALD beryllium oxide (BeO) for Si and III-V MOS devices have been investigated. The second part of this study focuses on the precursor synthesis and fundamental material characterization of ALD BeO thin film using physical, optical and electrical analysis. Film properties such as self-cleaning reaction and oxygen diffusion barrier will be presented. At the third part, depletion mode transistor and self-aligned MOSFETs using ALD BeO on Si and InP high mobility substrates have been investigated. And as for the final part of this study, the density functional theory of Be(CH3)2 precursor, electromagnetics, and thermodynamics were investigated to understand the reaction mechanism and self-cleaning reaction, and to evaluate the gate dielectrics such as Al2O3, BeO, SiO2, and HfO2.

Download or read book Interface engineered Ge MOSFETs for Future High Performance CMOS Applications written by Duygu Kuzum and published by Stanford University. This book was released on 2009 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of this dissertation, the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric are presented. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated. Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of this dissertation, ozone-oxidation process is introduced to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/dielectric interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented. Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of this dissertation, the results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature source/drain activation processes are discussed. These devices achieve the highest electron mobility to-date, about 1.5 times the universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past.

Download or read book Advanced Gate Stacks for High Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Download or read book High k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Download or read book Dielectrics in Nanosystems and Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 3 written by Zia Karim and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Issues in Electronic Circuits Devices and Materials 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 2454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Electronic Circuits, Devices, and Materials: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Electronic Circuits, Devices, and Materials. The editors have built Issues in Electronic Circuits, Devices, and Materials: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Electronic Circuits, Devices, and Materials in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Electronic Circuits, Devices, and Materials: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Atomic Layer Deposition Applications 6 written by J. W. Elam and published by The Electrochemical Society. This book was released on 2010-10 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the focus of this reoccurring symposium. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topographies with controlled thickness and composition. This issue of ECS Transactions contains peer reviewed papers presented at the symposium. A broad spectrum of ALD applications is featured, including novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics, and a variety of other emerging applications.

Download or read book Advanced Gate Stack Source drain and Channel Engineering for Si based CMOS 3 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2007 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Download or read book Graphene and Emerging Materials for Post CMOS Applications written by Yaw Obeng and published by The Electrochemical Society. This book was released on 2009-05 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.

Download or read book Atomic Layer Deposition Applications 4 written by Ana Londergan and published by The Electrochemical Society. This book was released on 2008 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. This issue of the ECS Transactions contains peer reviewed papers presented at the symposium. Breadths of ALD Applications are featured: novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics and a variety of other emerging applications.

Download or read book Physics and Technology of High k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.