Download or read book A Study on Polycrystalline Silicon Nanowire Tunnel Thin Film Transistor with Raised Source Drain written by Tien-Sheng Chao and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Second Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1995 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1999 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of the Fabrication and Characteristics of Poly Ge Thin film Transistors with Raised Source drain written by 陳冠宇 and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Low Temperature Polycrystalline Silicon Thin Film Transistors and MOSFETs Using Advanced Materials written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the First Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by . This book was released on 1992 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability Study written by 孫宏彰 and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study on Device Characterization of Polycrystalline silicon Thin film Transistors written by 裕幸·池田 and published by . This book was released on 2010 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on the Characteristics of Low Temperature Polycrystalline Silicon Tunnel Thin Film Transistors Via Green Nanoseconds Laser Crystallization written by and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on the Polycrystalline Silicon Thin film Transistors with Single Grain Boundary in the Channel for the 3D stacked CMOS Applications written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on the N Channel Polycrystalline Silicon Thin Film Transistors with High k HfO2 Gate Dielectrics Via Green Nanosecond Laser Crystallization written by and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on the Polycrystalline Silicon and Germanium Thin Film Transistors Via Continuous Wave Laser Crystallization written by and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation on the Characteristics and Applications of Novel Multiple Gated Inversion Mode and Junctionless Polycrystalline Silicon Nanowire Thin Film Transistors written by 林哲民 and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study on Stability Analysis and Defect Effect of Low Temperature Polycrystalline Silicon Thin Film Transistors written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors written by Kyung-Wook Shin and published by . This book was released on 2008 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs) have brought prominent growth in both variety and utility of large area electronics market over the past few decades. Nanocrystalline silicon (nc-Si:H) TFTs have attracted attention recently, due to high-performance and low-cost, as an alternative of amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs. The nc-Si:H TFTs has higher carrier mobility and better device stability than a-Si:H TFTs while lower manufacturing cost than poly-Si TFTs. However, current nc-Si:TFTs have several challenging issues on materials and devices, on which this thesis focuses. In the material study, the gate quality silicon nitride (a-SiNx) films and doped nc-Si:H contacts based on conventional plasma enhanced chemical vapor deposition (PECVD) are investigated. The feasibility of a-SiNx on TFT application is discussed with current-voltage (I-V)/capacitance-voltage(C-V) measurement and Fourier Transform Infrared Spectroscopy (FTIR) results which demonstrate 4.3 MV/cm, relative permittivity of 6.15 and nitrogen rich composition. The doped nc-Si:H for contact layer of TFTs is characterized with Raman Spectroscopy and I-V measurements to reveal 56 % of crystalinity and 0.42 S/cm of dark conductivity. Inverted staggered TFT structure is fabricated for nc-Si:H TFT device research using fully wet etch fabrication process which requires five lithography steps. The process steps are described in detail as well as adaptation of the fabrication process to a backplane fabrication for direct conversion X-ray imagers. The modification of TFT process for backplane fabrication involves two more lithography steps for mushroom electrode formation while other pixel components is incorporated into the five lithography step TFT process. The TFTs are electrically characterized demonstrating 7.22 V of threshold voltage, 0.63 S/decade of subthreshold slope, 0.07 cm2/V-s of field effect mobility, and 106 of on/off ratio. The transfer characteristics of TFTs reveal a severe effect of parasitic resistance which is induced from channel layer itself, a contact between channel layer and doped nc-Si:H contact layer, the resistance of doped nc-Si:H contact layer, and a contact between the doped nc-Si:H layer and source/drain metal electrodes. The parasitic resistance effect is investigated using numerical simulation method by various parasitic resistances, channel length of the TFT, and intrinsic properties of nc-Si:H channel layer. It reveals the parasitic resistance effect become severe when the channel is short and has better quality, therefore, several further research topics on improving contact nc-Si:H quality and process adjustment are required.
Download or read book Tunnel Field effect Transistors TFET written by Jagadesh Kumar Mamidala and published by John Wiley & Sons. This book was released on 2016-09-27 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
