Download or read book A Study of Low temperature Diethylsilane based Chemical Vapor Deposited Silicon Oxide as a Bulk and Thin Film Metal oxide semiconductor Gate Dielectric written by Danny Li-Ping Chen and published by . This book was released on 2001 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Densification Effects in Diethylsilane based Low temperature Silicon Oxide Films and a Novel Hydrogenation Process for Polycrystalline Silicon Thin Film Transistors written by Danny Li-Ping Chen and published by . This book was released on 2000 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nitride Silicon Dioxide Thin Insulating Films and Other Emerging Diele c trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Formation of Low Temperature Silicon Dioxide Films Using Chemical Vapor Deposition written by Hsiao-Hui Chen and published by . This book was released on 1991 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 1999 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2001 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Silicon Oxide and Flourinated Silicon Oxide Films Prepared by Plasma Enhanced Chemical Vapor Deposition Using Disilane as Silicon Precursor written by Juho Song and published by . This book was released on 1996 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nitride Silicon Dioxide and Emerging Dielectrics 9 written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2007 with total page 863 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.

Download or read book Atomic Layer Deposited Beryllium Oxide as a Gate Dielectric Or Interfacial Layer for Si and III V MOS Devices written by Jung Hwan Yum and published by . This book was released on 2012 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous improvement in the semiconductor industry has been successfully achieved by the reducing dimensions of CMOS (complementary metal oxide semiconductor) technology. For the last four decades, the scaling down of physical thickness of SiO2 gate dielectrics has improved the speed of output drive current by shrinking of transistor area in front-end-process of integrated circuits. A higher number of transistors on chip resulting in faster speed and lower cost can be allowable by the scaling down and these fruitful achievements have been mainly made by the thinning thickness of one key component - Gate Dielectric - at Si based MOSFET (metal-oxide-semiconductor field effect transistor) devices. So far, SiO2 (silicon dioxide) gate dielectric having the excellent material and electrical properties such as good interface (i.e., Dit ~ 2x1010 eV−1cm−2), low gate leakage current, higher dielectric breakdown immunity (≥10MV/cm) and excellent thermal stability at typical Si processing temperature has been popularly used as the leading gate oxide material. The next generation Si based MOSFETs will require more aggressive gate oxide scaling to meet the required specifications. Since high-k dielectrics provide the same capacitance with a thicker film, the leakage current reduction, therefore, less the standby power consumption is one of the huge advantages. Also, it is easier to fabricate during the process because the control of film thickness is still not in the critical range compared to the same leakage current characteristic of SiO2 film. HfO2 based gate dielectric is considered as the most promising candidate among materials being studied since it shows good characteristics with conventional Si technology and good device performance has been reported. However, it has still many problems like insufficient thermals stability on silicon such as low crystallization temperature, low k interfacial regrowth, charge trapping and so on. The integration of hafnium based high-k dielectric into CMOS technology is also limited by major issues such as degraded channel mobility and charge trapping. One approach to overcome these obstacles is using alternative substrate materials such as SiGe, GaAs, InGaAs, and InP to improve channel mobility. High electron mobility in the III-V materials has attracted significant attention for a possible application as a channel material in metal/oxide/semiconductor (MOS) transistors. One of the main challenges is that III-V MOSFETs generally lack thermodynamically stable insulators of high electrical quality, which would passivate the interface states at the dielectric/substrate interface and unpin the Fermi level. To address this issue, various dielectric, such as Si/SiO2, Ge, SiGe, SiN and Al2O3, were considered as an interface passivation layer (IPL). Atomic Layer Deposited (ALD) Al2O3 has demonstrated superior IPL characteristics compared to the other candidates due to its high dielectric constant and interface quality. However, defect density in Al2O3 is still too high even as several cleaning methods such as NH4OH, (NH4)2S and F treatment have been developed, which limits the performance of III-V MOSFETs. In the first part of this study, theoretical approaches to understand the motivation and requirements as an high-k gate dielectric or interfacial layer, and properties of ALD beryllium oxide (BeO) for Si and III-V MOS devices have been investigated. The second part of this study focuses on the precursor synthesis and fundamental material characterization of ALD BeO thin film using physical, optical and electrical analysis. Film properties such as self-cleaning reaction and oxygen diffusion barrier will be presented. At the third part, depletion mode transistor and self-aligned MOSFETs using ALD BeO on Si and InP high mobility substrates have been investigated. And as for the final part of this study, the density functional theory of Be(CH3)2 precursor, electromagnetics, and thermodynamics were investigated to understand the reaction mechanism and self-cleaning reaction, and to evaluate the gate dielectrics such as Al2O3, BeO, SiO2, and HfO2.

Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Depositions of high quality SiO[sub 2] and SnO[sub 2] films from the reaction of homoleptic amido precursors M(NMe[sub 2])4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 [plus-minus] 5 atom %. They are deposited with growth rates from 380 to 900 [angstrom]/min. The refractive indexes of the SiO[sub 2] films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm[sup [minus]1]. X-Ray diffraction studies reveal that the SiO[sub 2] film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO[sub 2] films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10[sup [minus]2] to 10[sup [minus]3] [Omega]cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

Download or read book Metal Oxide Semiconductors written by Zhigang Zang and published by John Wiley & Sons. This book was released on 2023-12-11 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.

Download or read book Low Pressure Chemical Vapor Deposition of Silicon Dioxide Below 500C by the Pyrolysis of Diethylsilane in Oxygen written by James Douglas Patterson and published by . This book was released on 1990 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Dioxide Deposition at 100 C Using Vacuum Ultraviolet Light written by J. Marks and published by . This book was released on 1988 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of silicon dioxide are used extensively as insulators in the fabrication of many semiconductor devices. Silicon dioxide films deposited by chemical vapor deposition typically require temperatures near 800 C. However, some processes, such as the fabrication of devices with multilevel aluminum interconnects, require deposition temperatures below 350 C. Several techniques that have been developed for low-temperature deposition of silicon dioxide include plasma-assisted deposition, low-pressure chemical vapor deposition, and photo-assisted chemical vapor deposition. Some photochemical deposition reaction use Hg vapor as a photochemical catalyst to decompose nitrous oxide in the pressure of silane. Films deposited with these reactions have been found to have adhesion problems, and tend to be in completely oxidized. Several other deposition reactions using photodissociation of molecular oxygen or disilane have been reported. (jes).

Download or read book A Study of Silicon Oxynitride as an Alternative Gate Dielectric Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition written by Winford Lee Hill and published by . This book was released on 1994 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Thermally Nitrided Silicon Dioxide Thin Films for Metal Oxide Silicon VLSI Techology written by 劉志宏 and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "A Study of Thermally Nitrided Silicon Dioxide Thin Films for Metal-oxide-silicon VLSI Techology" by 劉志宏, Zhihong, Liu, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123189 Subjects: Silicon oxide films Integrated circuits - Very large scale integration Metal oxide semiconductor field-effect transistors