Download or read book A study of hot carrier degradation in LDMOS transistor written by Atikah Razi and published by . This book was released on 2013 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot Carrier Effect on LDMOS Transistors written by Liangjun Jiang and published by . This book was released on 2007 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Download or read book Studies on Hot Carrier Effects in 12V P LDMOS Transistors written by 黃忠彬 and published by . This book was released on 2010 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Failure Analysis of Hot Electron Effect on Power Rf N Ldmos Transistor written by Mohamed Ali Bela D and published by LAP Lambert Academic Publishing. This book was released on 2012-07 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current problems in electronics for manufacturers or users are to determine the lifetime and estimate the reliability of device or system. As well improve their performance and quality. This book presents a synthesis of Hot-Electron effects on power RF LDMOS performances, after accelerated ageing tests. This can modify and degrade transistor physical and electrical behaviour. The temperature can limit the lifetime of semiconductors and plays an essential part in the degradation mechanisms. An electric characterization (IC-CAP) has been made, and a thermoelectric model ADS has been implemented. This is used as the reliability tool (parameters extraction) in order to quantify the parameter shift. We have pointed out the relation between the ageing tests and the hot carrier degradation in RF LDMOS, and its effect on the electric performances. To understanding of the degradation physical phenomena brought into play in the structure, we used a physical simulation 2-D (Atlas) to con rm these phenomena. Finally, the work demonstrates that the degradation mechanism of power RF LDMOS is the hot carrier injection phenomenon in the already existing oxide traps and/or in the Si/SiO2 interface."

Download or read book Mechanism of Hot Carrier Reliability in High Voltage P type LDMOS Transistors written by 嚴進嶸 and published by . This book was released on 2007 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot Carrier Reliability of 12V High Voltage N LDMOS Transistors written by 陳翔裕 and published by . This book was released on 2006 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characteristics and Hot Carrier Reliability in 40V N type LDMOS Transistors written by 郭育禎 and published by . This book was released on 2009 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot Carrier Reliability in 12V High Voltage P LDMOS Transistors written by 吳泰慶 and published by . This book was released on 2009 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effect of Device Dimension on Hot Carrier Reliability of N type LDMOS Transistors written by 王瑋傑 and published by . This book was released on 2007 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of Hot Carrier Induced Degradation in Lateral Diffused MOS Transistors written by 田昆玄 and published by . This book was released on 2009 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Simulation OfpMOSFET Hot carrier Degradation in Very Large CMOS Circuits written by Weishi Sun and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of the research work presented in this thesis are to model submicron pMOS transistor hot-carrier degradation and to develop a fast reliability simulation tool for hot-carrier reliability analysis of CMOS VLSI circuits. This simulator should be able to handle very large submicrometer circuits accurately and efficiently. As device sizes shrink into the submicron region, pMOS transistor hot-carrier degradation becomes increasingly more important. There has not, however, been a widely accepted model for pMOS transistor hot-carrier degradation unlike that for nMOS transistors. Existing reliability simulations tools are primarily based on transistor level simulation and, therefore, can not handle large circuits efficiently. Using the fast-timing-based reliability simulator, ILLIADS-R, and the empirical model developed based on our experimental results, hot-carrier reliability can be well predicted. ILLIADS-R also serves as an integral part of the hierarchical design-for-reliability system. A new hot-carrier degradation model is developed for submicron pMOS transistors. Using this model, the pMOS transistor hot-carrier degradation can be predicted based on the total injected charge into the gate oxide region and the initial gate current under normal operating condition. This model is integrated into the fast-timing-based reliability simulation tool, ILLIADS-R. The simulation results demonstrate that ILLIADS-R outperforms the existing reliability simulator BERT in terms of simulation speed with a comparable accuracy. Also studied are the pMOS transistor subthreshold leakage characteristics as a function of hot-carrier stress conditions. It is shown that subthreshold leakage current is a future limit to the pMOS device lifetime.

Download or read book Characterization of Hot carrier Degradation in Submicrometer MOS Transistors written by Diing Shenp Ang and published by . This book was released on 1997 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Hot carrier Degradation in Nitrided and Conventional Oxides written by Kah Heong Goo and published by . This book was released on 1998 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Width Dependence of Hot Carrier Degradation in P channel MOS Transistors written by 周亮宇 and published by . This book was released on 2010 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study on the Hot carrier Degradation of Wide and Narrow Channel Nmosfet Devices with Recessed locos Isolation Structures written by Jeffrey Mun Pun Yue and published by . This book was released on 2000 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the International Symposium on the Physical Failure Analysis of Integrated Circuits written by and published by . This book was released on 2004 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: