Download or read book Physics based Analytical Model for Silicon Carbide MESFET with a New Concept of Charge Conserving Capacitance written by Kiran Kumar Rambappagari and published by . This book was released on 2013 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Download or read book A Physics based Model of SiC based MESFETs written by Sankha S. Mukherjee and published by . This book was released on 2004 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A physics-based analytical model of the SiC MESFET incorporating trapping and thermal effects is reported. The model takes into account the field and temperature dependencies of carrier transport parameters and carrier trapping effects. Both surface and substrate traps have been incorporated in the model to calculate the observed current slump in the I-V characteristics. The trapping and detrapping from surface traps control the channel opening at the drain end of the channel that requires the drain resistance to be gate and drain voltage dependent. The substrate traps capture channel electrons at high drain bias when the buffer layer is fully depleted resulting in current collapse at low drain bias in the following I-V trace. The detrapping of the captured electrons is initiated with the increasing drain bias and the channel electron concentration increases which is accelerated by increased thermal effects. As a result, restoration of collapsed drain current is obtained before the trapping effect is reinitiated at high drain bias. The calculated results using the current model are in good agreement with experimental data. A small-signal model for the MESFET has also been proposed. Calculations for the output conductance, the transconductance, the gate-source and gate-drain capacitance has also been presented"--Abstract.
Download or read book Physics Based Analytical Model for Silicon Carbide Metal Semiconductor Field effect Transistors for Microwave Frequency Applications written by Bodhisattwa Samanta and published by . This book was released on 2013 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, the author presents a physics based analytical modeling and simulation of ion implanted silicon carbide Schottky gate FET. The model has been developed to compute the drain-source current, intrinsic parameters such as, gate capacitances, drain-source resistance and transconductance taking into account of different fabrication parameters such as doping concentration of active channel, doping constant, mobility, the correlation between active channel depth and pinch off voltage and other physical parameters. The physics based analytical model for a non self-aligned SiC MESFET shows different intrinsic and extrinsic parameters reflecting the microwave frequency applications.
Download or read book A Physics Based Frequency Dispersion Model of SiC MESFET written by Srikanth Movva and published by . This book was released on 2018 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC) MESFETs device. The dispersion characteristics are observed to be dependent on bulk traps effects. I-V characteristics of SiC MESFET have been evaluated to determine the power-aided efficiency and switching performance from the linearity and linearity behaviors of drain current. The significant change of drain current, transconductance and gate-source capacitance have been observed due to the bulk traps effects on charge carrier reflecting GHz frequency performance of SiC MESFET device. The results of device performance simulated by MatLab tool have been described chronologically in the result and discussion chapter.
Download or read book Device Physics Modeling Technology and Analysis for Silicon MESFET written by Iraj Sadegh Amiri and published by Springer. This book was released on 2018-12-13 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Download or read book Physics Based Analytical Model of Silicon Carbide MESFET with Effective Drift Velocity and Mobility written by Rishitej Reddy Byravarapu and published by . This book was released on 2015 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: An analytical model of silicon carbide based MESFET has been developed to evaluate the frequency response from an intensive study of the I-V characteristics and intrinsic parameters. The I-V characteristics have been determined by the channel charge in the linear and non-linear regimes. The transconductance has been computed in the saturation region to determine its properties contributing to the cut-off frequency response. The gate-source capacitance and gate-drain capacitance under saturation condition have been calculated in the frame of this model. The cut off frequency has been evaluated by using the transconductance and gate capacitance and the anticipated cut-off frequency is expected to obtain in the order of GHz range due the properties of wide bandgap semiconductor.
Download or read book Physics Based Analytical Model of the Frequency Behaviour of 4H SiC MESFET written by Ravi Teja Reddy Garugu and published by . This book was released on 2018 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: A physics based analytical modeling of SiC MESFET has been presented in this grad thesis to evaluate I-V characteristics, and transconductance under traps effects. The impact of grad thesis is to show the traps effects on different electrical parameter because the SiC material is still having adequate defects during growth, which promotes the trap center to degrade the device performance. The traps centers have been considered with different electronic capture cross-section in traps energy level. The drain currents for various gate-source voltage shows significant effect due traps effects, However, I-V characteristics shows a sharp view of linear and non-linear behavior of drain current, which shows no significant effects on switching properties due to the influence of trap centers. Similarly, the transconductance shows significant effect due to traps. The transconductance has been determined for different active channel thickness to study the device performance for power aided efficiency.
Download or read book Analytical Modeling of 4H silicon Carbide Based MESFET with Trapping Effects written by Chirayu Shah and published by . This book was released on 2017 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide metal semiconductor effect transistor has a massive possible popular high-power device at microwave frequencies because of their extensive band-gap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based analytical model of Silicon Carbide based MESFETs has been developed considering high-purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been evaluated to understand the power aided efficiency and frequency performance.
Download or read book SiC based Miniaturized Devices written by Stephen Edward Saddow and published by MDPI. This book was released on 2020-06-18 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.
Download or read book Scaling of an Ion Implanted Silicon Carbide SiC Based MESFET written by Sai Nikitha Rudraraju and published by . This book was released on 2016 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this grad project is to understand the scaling influence of different electrical parameters of Silicon Carbide (SiC) based MESFET by using an analytical model which is calculated using MATLAB software. The device doping concentration, dimension, fabrication have been scaled to conclude the scaling effect on the time-delay, DC output power, threshold voltage, drain-source current and cut-off frequency. The goal of this grad thesis aids the positive influence of scaling effect on device fabrication. It also justifies that few estimated scaling results may get saturated outside some point of scaling in the device. The thesis incorporates the Introduction of the grad thesis in chapter one, Silicon Carbide (SiC) material in chapter two, MESFET physics in chapter three, Scaling rules in chapter four, Numerical equations in chapter five and Results and discussions in chapter six.
Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.
Download or read book Analytical Model of SiC Based Mesfet for Determination of Device Frequency and Noise written by Srikanth Veesam and published by . This book was released on 2016 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: Preceding a couple of years, a lot of work has been done for wide band gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Silicon Carbide (SiC) as a wide band gap material is used in many applications due to its high temperature, high breakdown field, higher power and high saturation velocity. The main objective of this graduate project is to study the electrical parameters extracted from analytical model. In order to develop an accurate modeling of 4H-SiC MESFET, the drain current has been evaluated for linear and non-linear regimes to obtain the I-V characteristics. The linear and non-linear regimes in the I-V characteristics increase the accuracy of the model for any short channel FET device. The transfer characteristics has been evaluated to determine the threshold voltage confirming the depletion mode. The spectral power density has been evaluated to find the influence of the spectral power density on frequency response of 4H-SiC MESFET, which is a vital study to determine the power aided efficiency (PAE). The characteristics of spectral power density and cut-off frequency determine the device performance for maximum power output and maximum frequency performance are elucidated in the spectral power density plot.
Download or read book Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas written by Pushpakaran Bejoy N and published by World Scientific. This book was released on 2019-03-25 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Download or read book Silicon Carbide SiC Based MESFET Similation for High Power and High Frequency Performance Using MATLAB written by Bhavik Patel and published by . This book was released on 2015 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Download or read book Silicon Carbide Based Metal Semiconductor Field Effect Transistor Variable capacitance Model for Realizing Monolithic Microwave Integrated Circuit Voltage controlled Function written by Sitarama Raju Gottumukkala and published by . This book was released on 2013 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Download or read book A Fully Analytical Back gate Bias Model for N channel Silicon Carbide MESFETs with Back Channel Implant written by Sushma Malku and published by . This book was released on 2017 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this grad thesis is to develop an analytical model for n-channel MESFET device and understanding the device parameters incorporating the back-gate biasing effect. The device has been structured by n-channel using front and back doping processes. The physics based analytical model of SiC MESFET gave the clear picture of electrostatic potential distribution at any position of channel. The electric field distribution underneath the gate under drain source biasing shows an important properties of electric field distribution. The threshold voltage variations with back gate biasing for different substrate concentration and ion dose have been discussed to study the device properties for switching and frequency performance. The grad thesis incorporate the introduction of the thesis in chapter 1, silicon carbide material in chapter 2, MESFET physics in chapter 3, numerical calculations in chapter 4 and results and discussion in chapter 5.
