Download or read book A Noise Study of Bipolar Junction Transistor Reliability written by Chih-Chieh Jack Sun and published by . This book was released on 1993 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise Studies of Bipolar Junction Transistor Circuits written by Kenneth B. Stone and published by . This book was released on 1972 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability and Failure Analysis of Bipolar Junction Transistor written by Ching Yit Lim and published by . This book was released on 2008 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability of Electronic Components written by Titu I. Bajenescu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: This application-oriented professional book explains why components fail, addressing the needs of engineers who apply reliability principles in design, manufacture, testing and field service. A detailed index, a glossary, acronym lists, reliability dictionaries and a rich specific bibliography complete the book.
Download or read book Component Reliability for Electronic Systems written by Titu I. Băjenescu and published by Artech House. This book was released on 2010 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main reason for the premature breakdown of today's electronic products (computers, cars, tools, appliances, etc.) is the failure of the components used to build these products. Today professionals are looking for effective ways to minimize the degradation of electronic components to help ensure longer-lasting, more technically sound products and systems. This practical book offers engineers specific guidance on how to design more reliable components and build more reliable electronic systems. Professionals learn how to optimize a virtual component prototype, accurately monitor product reliability during the entire production process, and add the burn-in and selection procedures that are the most appropriate for the intended applications. Moreover, the book helps system designers ensure that all components are correctly applied, margins are adequate, wear-out failure modes are prevented during the expected duration of life, and system interfaces cannot lead to failure.
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability Study of InGaP GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Bipolar Junction Transistors at Cryogenic Temperatures written by Thomas Wade and published by . This book was released on 2019-12-08 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Fluctuation phenomenon (both thermal and shot noise) were measured in the junctions of bipolar junction transistors (BJT's) at liquid nitrogen temperatures and beyond. Dissertation Discovery Company and the University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Noise in Bipolar Junction Transistors at Cryogenic Temperatures." by Thomas Edward Wade, was obtained from the University of Florida and is being sold with permission from the author. A free digital copy of this work may also be found in the university's institutional repository, the IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Download or read book Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices written by Josef Sikula and published by Springer Science & Business Media. This book was released on 2006-02-21 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects. The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise Sources in Bipolar Junction Transistors written by Richard Charles Jaeger and published by Palala Press. This book was released on 2018-03-02 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
Download or read book Reliability Study of Bipolar Transistors with Metal insulator semiconductor Heterojunction Emitters written by Ngam Szeto and published by . This book was released on 1988 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Frequency Noise Sources in Bipolar Junction Transistors written by Richard Charles Jaeger and published by Palala Press. This book was released on 2015-09-08 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
Download or read book Principles and Analysis of AlGaAs GaAs Heterojunction Bipolar Transistors written by Juin J. Liou and published by Artech House Publishers. This book was released on 1996 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.
Download or read book Quantum 1 f Noise in Bipolar Junction Transistors written by Alister Chun-Fung Young and published by . This book was released on 1990 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
