Download or read book A microstrip X band AlGaN GaN power amplifier MMIC on s i SiC substrate written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm x3 mm operating between 8GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMTtechnology on s.i. SiCsubstrate. TheMMIC device delivers a maximum pulsed out put power of 8.9 W (39.5 dBm) at 8.5 GHz at VDS = 31 V,10%dutycycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.
Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Download or read book High Power High Bandwidth GaN MMICs and Hybrid Amplifiers Design and Characterization written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dualstage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Download or read book Sustainable Aviation written by T. Hikmet Karakoc and published by Springer. This book was released on 2016-07-20 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This expansive reference on the use of clean energy technologies in the aviation industry focuses on tools and solutions for maximizing the energy efficiency of aircrafts, airports, and other auxiliary components of air transit. Key topics range from predicting impacts of avionics and control systems to energy/exergy performance analyses of flight mechanics and computational fluid dynamics. The book includes findings both from experimental investigations and functional extant systems, ranging from propulsion technologies for aerospace vehicles to airport design to energy recovery systems. Engineers, researchers and students will benefit from the broad reach and numerous engineering examples provided.
Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Download or read book Proceedings of the CANEUS2006 MNT for Aerospace Applications written by Milind Pimprikar and published by American Society of Mechanical Engineers. This book was released on 2006 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Industrial Instrumentation and Control Systems written by Prasad Yarlagadda and published by Trans Tech Publications Ltd. This book was released on 2012-12-13 with total page 3670 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume covers the topics of: instrument design and measurement theory, reliability of instruments and fault diagnosis, precision instruments and computer vision, automation instruments, electrical and electronic instruments and equipment, sensors and their application, control technologies and applications, fluid power transmission and control, mechatronics, modeling, analysis and simulation, artificial intelligence, industrial robots and automation, automotive control systems, intelligent traffic control, CAD/CAM/CAE/CIM, optoelectronic technology, embedded systems, communication technology and network security, software development and mathematical modeling, computer applications in industry and engineering, the internet.
Download or read book Ka Band AlGaN GaN HEMT High Power and Driver Amplifier MMICs written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technol-ogy are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.
Download or read book Nano Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Download or read book Fabrication of Very High Efficiency 5 8 Ghz Power Amplifiers Using Algan Hfets on Sic Substrates for Wireless Power Transmission written by National Aeronautics and Space Adm Nasa and published by Independently Published. This book was released on 2018-09-19 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.Sullivan, GerryMarshall Space Flight CenterMICROWAVE AMPLIFIERS; SEMICONDUCTORS (MATERIALS); GALLIUM ARSENIDES; GALLIUM NITRIDES; RADIO FREQUENCIES; SILICON CARBIDES; TRANSISTORS; COOLING; ENERGY GAPS (SOLID STATE); FABRICATION; HETEROJUNCTIONS
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave Journal written by and published by . This book was released on 2006 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials Physics and Device Development for Improved Efficiency of GaN HEMT High Power Amplifiers written by Steven Ross Kurtz and published by . This book was released on 2005 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.
Download or read book Development of GaN Based Microwave Power Amplifier for X Band Applications written by and published by . This book was released on 2000 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: The feasibility of utilizing the GaN/AlGaN material system in the development of high power amplifiers for X-band frequencies and above was investigated. The GaN based heterojunction field effect transistor (HFET) on SiC shows remarkable power density at microwave frequencies. An order of magnitude improvement can be attained in output power when compared with present GaAs devices, judging from the already observed power density along with further anticipated advances of these GaN devices. Four individual HFET devices operating in combination were able to achieve 6 watts (W) output at 9.4 Ghz. The investigation into improving this performance for Phase Ii research is documented.
Download or read book A Compact C Band 50 W AlGaN GaN High Power MMIC Amplifier for Radar Applications written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
