Download or read book A Compact C Band 50 W AlGaN GaN High Power MMIC Amplifier for Radar Applications written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Download or read book Power Amplifiers for the S C X and Ku bands written by Mladen Božanić and published by Springer. This book was released on 2015-12-29 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.
Download or read book High Power High Bandwidth GaN MMICs and Hybrid Amplifiers Design and Characterization written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dualstage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.
Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
Download or read book A Compact Broadband High Efficient X Band 9 Watt PHEMT MMIC High power Amplifier for Phased Array Radar Applications written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper the development and measurement results of a compact broadband 9-Watt high-efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the-art performance: an average output power of 9 Watt, a gain of 20 dB and an average Power Added Efficiency of 35% over a relative bandwidth of 40% at X-band. The amplifier is realised in a pseudomorphic HEMT GaAs MMIC technology developed by the Fraunhofer Institute for Applied Solid State Physics (FhG-IAF) in the scope of the WEAG/TA1/CTP8.1 program.
Download or read book High Efficiency LOW AM PM 6W C band MMIC Power Amplifier for a Space Radar Program written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper describes the design of a compact C-band MMIC power amplifier. Intensive non-linear and electro-magnetic simulations with accurate table-based models allowed the chips to achieve very good performance. A linear gain of 28 dB, an output power greater than 6 W with 50 % of power added efficiency and 3°/dB of AM/PM conversion at 2.5 dB gain compression have been measured over production at ambient temperature in the useful bandwidth.
Download or read book Ka Band AlGaN GaN HEMT High Power and Driver Amplifier MMICs written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technol-ogy are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.
Download or read book AlGaN GaN HEMT Power Amplifiers with Optimized Power added Efficiency for X band Applications written by Jutta Kühn and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A microstrip X band AlGaN GaN power amplifier MMIC on s i SiC substrate written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm x3 mm operating between 8GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMTtechnology on s.i. SiCsubstrate. TheMMIC device delivers a maximum pulsed out put power of 8.9 W (39.5 dBm) at 8.5 GHz at VDS = 31 V,10%dutycycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.
Download or read book The Electrical Engineering Handbook Six Volume Set written by Richard C. Dorf and published by CRC Press. This book was released on 2018-12-14 with total page 3672 pages. Available in PDF, EPUB and Kindle. Book excerpt: In two editions spanning more than a decade, The Electrical Engineering Handbook stands as the definitive reference to the multidisciplinary field of electrical engineering. Our knowledge continues to grow, and so does the Handbook. For the third edition, it has grown into a set of six books carefully focused on specialized areas or fields of study. Each one represents a concise yet definitive collection of key concepts, models, and equations in its respective domain, thoughtfully gathered for convenient access. Combined, they constitute the most comprehensive, authoritative resource available. Circuits, Signals, and Speech and Image Processing presents all of the basic information related to electric circuits and components, analysis of circuits, the use of the Laplace transform, as well as signal, speech, and image processing using filters and algorithms. It also examines emerging areas such as text to speech synthesis, real-time processing, and embedded signal processing. Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar delves into the fields of electronics, integrated circuits, power electronics, optoelectronics, electromagnetics, light waves, and radar, supplying all of the basic information required for a deep understanding of each area. It also devotes a section to electrical effects and devices and explores the emerging fields of microlithography and power electronics. Sensors, Nanoscience, Biomedical Engineering, and Instruments provides thorough coverage of sensors, materials and nanoscience, instruments and measurements, and biomedical systems and devices, including all of the basic information required to thoroughly understand each area. It explores the emerging fields of sensors, nanotechnologies, and biological effects. Broadcasting and Optical Communication Technology explores communications, information theory, and devices, covering all of the basic information needed for a thorough understanding of these areas. It also examines the emerging areas of adaptive estimation and optical communication. Computers, Software Engineering, and Digital Devices examines digital and logical devices, displays, testing, software, and computers, presenting the fundamental concepts needed to ensure a thorough understanding of each field. It treats the emerging fields of programmable logic, hardware description languages, and parallel computing in detail. Systems, Controls, Embedded Systems, Energy, and Machines explores in detail the fields of energy devices, machines, and systems as well as control systems. It provides all of the fundamental concepts needed for thorough, in-depth understanding of each area and devotes special attention to the emerging area of embedded systems. Encompassing the work of the world's foremost experts in their respective specialties, The Electrical Engineering Handbook, Third Edition remains the most convenient, reliable source of information available. This edition features the latest developments, the broadest scope of coverage, and new material on nanotechnologies, fuel cells, embedded systems, and biometrics. The engineering community has relied on the Handbook for more than twelve years, and it will continue to be a platform to launch the next wave of advancements. The Handbook's latest incarnation features a protective slipcase, which helps you stay organized without overwhelming your bookshelf. It is an attractive addition to any collection, and will help keep each volume of the Handbook as fresh as your latest research.
Download or read book X band High PAE MMIC HPA for Space Radar Applications written by and published by . This book was released on 1906 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A MMIC 2-Watt 5-stage amplifier (HPA) has been successfully designed in one foundry run. This HPA, developed for a space Radar application at X band, has a 40dB linear gain, an output power of 34dBm with a 32% associated Power Added Efficiency (with a maximum of 39%) and uses the THOMSON TCS HP07 technology (Lg=0.7um) which is on the way to be qualified for Space Application. The tests have been performed both on wafer and in package.
Download or read book A C band 55 PAE High Gain Two stage Power Amplifier Based on AlGaN GaN HEMT Project Supported by the National Key Basic Research Program of China Grant No 2011CBA00606 Program for New Century Excellent Talents in University China Grant No NCET 12 0915 and the National Natural Science Foundation of China Grant No 61334002 written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency ( f 0 and 2 f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance.
Download or read book AlGaN GaN Based Ultra wideband 15 W High Power Amplifier with Improved Return Loss written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design of High Power Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN GaN HEMTs written by Jeffrey Lee Tan and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the theory, design, and implementation of two high power (>10 W) RF power amplifiers operating in the S-band (2 to 4 GHz) and employing the Class F mode of efficiency enhancement. The amplifiers are based around gallium nitride (GaN) high electron mobility transistors (HEMTs) which provide the high power capability. A complex wideband design using synthesized low-pass transforming filters as large-bandwidth matching networks is presented, followed by a more elegant narrowband design employing simple stub matching networks for impedance matching and harmonic control. Also presented in this thesis is a detailed study into the computer modeling of the GaN HEMT devices in order to accurately predict their behavior when integrated into a system. A complete small-signal circuit model is developed which is capable of predicting the scattering parameters of the devices with a high degree of accuracy to the measured behavior. Large-signal device models of increasing complexity are studied to investigate fundamental behaviors of field-effect transistors for which HEMTs are a subset. Finally, the manufacturer design kit’s computer model is investigated and verified for accuracy with the measured results.An overview of power amplifier design and classes of operation is given, and specifically Class F theory and implementation are analyzed. The efficiency enhancement by waveform shaping is studied, as well as the mechanism of waveform shaping via harmonic manipulation. Once fabricated and tested, the wideband design is shown to achieve at least 38.8 dBm output power between 2.2 to 3.3 GHz centered around 2.75 GHz, giving a fractional bandwidth of 40%. Over that range, the PA is able to sustain PAE > 40%, with a peak efficiency of 61%. The narrowband design achieves an output power at its center frequency of 3 GHz of 41.48 dBm, or ~14 W, with the PAE achieving a maximum of approximately 66%.
Download or read book Non linear MMIC Design Using AlGaN GaN HEMT Technology written by Valiallah Zomorrodian and published by . This book was released on 2011 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: High output power and high efficiency are two desirable factors for RF/microwave power amplifiers. Higher power added efficiency (PAE) leads to less DC power consumption by the circuit, increasing the battery life and relaxing the heat dissipation requirements, while high power density results in smaller, simpler circuitry. Monolithic Microwave Integrated Circuits (MMICs) are of great interest for microwave applications due to their much smaller size compared to the hybrid implementations. Among the existing microwave device technologies, AlGaN/GaN high electron mobility transistor (HEMT) technology is rapidly emerging as the high-power, high-frequency device of choice for future wireless applications. AlGaN/GaN HEMTs have superior power-density and much higher breakdown voltage compared with other technologies, and excellent power performance has been reported for devices as well as for MMIC power amplifiers.
