Download or read book A 1 8 3 GHz band High Efficiency GaAs PHEMT Power Amplifier MMIC written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute's GaAs pHEMT monolithic microwave integrated circuit (MMIC) technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 : 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3 GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.7 × 2.75 mm 2 .

Download or read book A Miniaturized 0 5 Watt Q band 0 25 m GaAs PHEMT High Power Amplifier MMIC written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of a very compact power amplifier MMIC for Q-band applications is reported. Using a 4-inch 0.25-æm GaAs power PHEMT process, this 4-stage amplifier achieved a linear gain of 19 dB over the 36 to 45 GHz frequency range, with an output power at 1-dB gain compression of 26 dBm (P-1dB=400 mW), and a saturated output power of 0.5 Watt (Psat=27 dBm), for a chip size of only 2.25 mm 2 (1.25 × 1.8 mm 2). Compared to state-of-the-art power amplifier MMICs operating in the 36-43 GHz frequency range, the combined output power- and gain- densities per chip area are nearly a factor two higher, namely 220 mW/mm 2 and 8.5 dB/mm 2.

Download or read book Ku band High Efficiency GaAs MMIC Power Amplifiers written by and published by . This book was released on 1988 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book MESFET High power High efficiency MMIC Amplifiers at X band with 30 Bandwidth written by and published by . This book was released on 1906 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A 3-Watt and a 5-Watt high-efficiency high-power amplifier are presented. The amplifiers are manufactured in a GaAs MESFET process. The 3-Watt amplifier exhibits 4 Watt output power at 10.6 GHz with an associated PAE of 43% and more than 3 Watt output power with more than 30% PAE from 8 GHz to 11.3 GHz. The 5-Watt amplifier exhibits 7W output power at 8.8 GHz with an associated PAE of 40% and more than 5 Watt output power with more than 30% PAE from 7.8 GHz to 10.6 GHz.

Download or read book AlGaN GaN HEMT power amplifiers with optimized power added efficiency for X band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Download or read book Lumped Elements for RF and Microwave Circuits Second Edition written by Inder J. Bahl and published by Artech House. This book was released on 2022-12-31 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated and including entirely new chapters, this Second Edition provides in-depth coverage of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Featuring extensive formulas for lumped elements, design trade-offs, and an updated and current list of references, the book helps you understand the value and usefulness of lumped elements in the design of RF, microwave and millimeter wave components and circuits. You’ll find a balanced treatment between standalone lumped elements and their circuits using MICs, MMICs and RFICs technologies. You’ll also find detailed information on a broader range RFICs that was not available when the popular first edition was published. The book captures – in one consolidated volume -- the fundamentals, equations, modeling, examples, references and overall procedures to design, test and produce microwave components that are indispensable in industry and academia today. With its superb organization and expanded coverage of the subject, this is a must-have, go-to resource for practicing engineers and researchers in industry, government and university and microwave engineers working in the antenna area. Students will also find it a useful reference with its clear explanations, many examples and practical modeling guidelines.

Download or read book Nitride Semiconductor Technology written by Fabrizio Roccaforte and published by John Wiley & Sons. This book was released on 2020-07-17 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Download or read book Compound Semiconductor Power Transistors II and written by R. F. Kopf and published by The Electrochemical Society. This book was released on 2000 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Download or read book 44 5 GHz PHEMT Power Amplifier written by Scott McLelland and published by . This book was released on 1997 with total page 43 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work described in this report represents the design phase of a gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) power amplifier using pseudomorphic high electron mobility transistors (PHEMTs). The main purpose was to investigate the possible performance of a power amplifier at 44 GHz for future application in a phased array antenna system. The design of a two stage amplifier, providing over 12 dB of gain over the frequency range 43.5-45.5 GHz, is described along with the expected large signal performance. It is expected that the amplifier will provide over 20 dBm of output power. The final layout of the complete chip is also presented.

Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

Download or read book Ka Band GAAS Fet Monolithic Power Amplifier Development written by National Aeronautics and Space Adm Nasa and published by . This book was released on 2018-10-28 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract. Saunier, Paul and Tserng, Hua Quen Glenn Research Center...

Download or read book High power GaAs FET Amplifiers written by John L. B. Walker and published by Artech House Microwave Library. This book was released on 1993 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications.

Download or read book High Efficiency Class F MMIC Power Amplifiers at Ku Band written by and published by . This book was released on 2005 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two high efficiency Ku-band pHEMT power amplifier MMICs are presented in this paper. A single, stage, high efficiency amplifier provides a peak power added efficiency of 57.6% with 10.5 dB associated gain and 26.5 dBm output power into a 50 Ohms load at 14 GHz. Additionally, a dual stage, high gain amplifier provides a peak power added efficiency of 50.4% with 19.7 dB associated gain and 27.5 dBm output power into a 50 Ohms load at 14.3 GHz. State-of-the-art efficiency performance at these frequencies is achieved through Class-F transistor operation. Process selection, circuit design, and measured results are described.

Download or read book Gallium Arsenide IC Applications Handbook written by and published by Elsevier. This book was released on 1995-09-27 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list

Download or read book Advanced GaAs MMIC Technology written by Fazal Ali and published by . This book was released on 1989 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.