Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by . This book was released on 2006 with total page 878 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Download or read book Extraction of Semiconductor Diode Parameters written by Richard Ocaya and published by Springer Nature. This book was released on with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CVD growth of SiC for high power and high frequency applications written by Robin Karhu and published by Linköping University Electronic Press. This book was released on 2019-02-14 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane dislocations (BPD). Due to these problems SiC for electronic devices must be grown by homoepitaxy. The epitaxial growth is performed in chemical vapor deposition (CVD) reactors. In this work, growth has been performed in a horizontal hot-wall CVD (HWCVD) reactor. In these reactors it is possible to produce high-quality SiC epitaxial layers within a wide range of doping, both n- and p-type. SiC is a well-known example of polytypism, where the different polytypes exist as different stacking sequences of the Si-C bilayers. Polytypism makes polytype stability a problem during growth of SiC. To maintain polytype stability during homoepitaxy of the hexagonal polytypes the substrates are usually cut so that the angle between the surface normal and the c-axis is a few degrees, typically 4 or 8°. The off-cut creates a high density of micro-steps at the surface. These steps allow for the replication of the substrates polytype into the growing epitaxial layer, the growth will take place in a step-flow manner. However, there are some drawbacks with step-flow growth. One is that BPDs can replicate from the substrate into the epitaxial layer. Another problem is that 4H-SiC is often used as a substrate for growth of GaN epitaxial layers. The epitaxial growth of GaN has been developed on on-axis substrates (surface normal coincides with c-axis), so epitaxial 4H-SiC layers grown on off-axis substrates cannot be used as substrates for GaN epitaxial growth. In efforts to solve the problems with off-axis homoepitaxy of 4H-SiC, on-axis homoepitaxy has been developed. In this work, further development of wafer-scale on-axis homoepitaxy has been made. This development has been made on a Si-face of 4H-SiC substrates. The advances include highly resistive epilayers grown on on-axis substrates. In this thesis the ability to control the surface morphology of epitaxial layers grown on on-axis homoepitaxy is demonstrated. This work also includes growth of isotopically enriched 4H-SiC on on-axis substrates, this has been done to increase the thermal conductivity of the grown epitaxial layers. In (paper 1) on-axis homoepitaxy of 4H-SiC has been developed on 100 mm diameter substrates. This paper also contains comparisons between different precursors. In (paper 2) we have further developed on-axis homoepitaxy on 100 mm diameter wafers, by doping the epitaxial layers with vanadium. The vanadium doping of the epitaxial layers makes the layers highly resistive and thus suitable to use as a substrate for III-nitride growth. In (paper 3) we developed a method to control the surface morphology and reduce the as-grown surface roughness in samples grown on on-axis substrates. In (paper 4) we have increased the thermal conductivity of 4H-SiC epitaxial layers by growing the layers using isotopically enriched precursors. In (paper 5) we have investigated the role chlorine have in homoepitaxial growth of 4H-SiC. In (paper 6) we have investigated the charge carrier lifetime in as-grown samples and traced variations in lifetime to structural defects in the substrate. In (paper 7) we have investigated the formation mechanism of a morphological defect in homoepitaxial grown 4H-SiC.

Download or read book Metal Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.

Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2019-07-17 with total page 1788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.

Download or read book Design Control and Application of Modular Multilevel Converters for HVDC Transmission Systems written by Kamran Sharifabadi and published by John Wiley & Sons. This book was released on 2016-10-17 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design, Control and Application of Modular Multilevel Converters for HVDC Transmission Systems is a comprehensive guide to semiconductor technologies applicable for MMC design, component sizing control, modulation, and application of the MMC technology for HVDC transmission. Separated into three distinct parts, the first offers an overview of MMC technology, including information on converter component sizing, Control and Communication, Protection and Fault Management, and Generic Modelling and Simulation. The second covers the applications of MMC in offshore WPP, including planning, technical and economic requirements and optimization options, fault management, dynamic and transient stability. Finally, the third chapter explores the applications of MMC in HVDC transmission and Multi Terminal configurations, including Supergrids. Key features: Unique coverage of the offshore application and optimization of MMC-HVDC schemes for the export of offshore wind energy to the mainland. Comprehensive explanation of MMC application in HVDC and MTDC transmission technology. Detailed description of MMC components, control and modulation, different modeling approaches, converter dynamics under steady-state and fault contingencies including application and housing of MMC in HVDC schemes for onshore and offshore. Analysis of DC fault detection and protection technologies, system studies required for the integration of HVDC terminals to offshore wind power plants, and commissioning procedures for onshore and offshore HVDC terminals. A set of self-explanatory simulation models for HVDC test cases is available to download from the companion website. This book provides essential reading for graduate students and researchers, as well as field engineers and professionals who require an in-depth understanding of MMC technology.

Download or read book Classic and Advanced Ceramics written by Robert B. Heimann and published by John Wiley & Sons. This book was released on 2010-04-16 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the author's lectures to graduate students of geosciences, physics, chemistry and materials science, this didactic handbook covers basic aspects of ceramics such as composition and structure as well as such advanced topics as achieving specific functionalities by choosing the right materials. The focus lies on the thermal transformation processes of natural raw materials to arrive at traditional structural ceramics and on the general physical principles of advanced functional ceramics. The book thus provides practice-oriented information to readers in research, development and engineering on how to understand, make and improve ceramics and derived products, while also serving as a rapid reference for the practitioner. The choice of topics and style of presentation make it equally useful for chemists, materials scientists, engineers and mineralogists.

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Download or read book Advances in Emerging Solar Cells written by Munkhbayar Batmunkh and published by MDPI. This book was released on 2020-11-13 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic (PV) cells, which directly convert sunlight into electricity, are renewable sources of energy that are sustainable and totally inexhaustible. Emerging classes of solar PV cells have drawn considerable attention because they provide significant advantages over traditional silicon solar cells, such as low cost and attractive designs (lightweight, flexible, and portable) while exhibiting promising performance. Despite these features, certain challenges restrict the possible commercialization of these technologies. The world's leading scientists are making numerous efforts focused on bringing these promising technologies closer to commercialization. Some of these scientists provided valuable research contributions to this Special Issue on “Advances in Emerging Solar Cells” published by Nanomaterials, MDPI. This Special Issue presents 12 excellent articles, 10 research and 2 review papers, covering perovskite solar cells, heterojunction solar cells, organic solar cells, dye-sensitized solar cells, and PV materials. We think that this Special Issue will attract significant attention from a broad research community including renewable energy, photovoltaic, emerging solar cells, material science and nanotechnology.

Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.