Download or read book 3D Integration of Resistive Switching Memory written by Qing Luo and published by CRC Press. This book was released on 2023-04-13 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.

Download or read book 3D Integration of Resistive Switching Memory written by Qing Luo and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-selective cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM Beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general"--

Download or read book Resistive Switching Random Access Memory Device Scaling in 3D Architecture and Integration with Complementary Metal Oxide Semiconductor written by Joon Sohn and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapid development and proliferation of mobile devices, such as smartphones, has enabled quick and easy Internet access, providing various sensor data from those devices. Amid a plethora of data, there has been an increase in demand for higher density storage class memory (SCM), which has been met through feature size scaling. However, it is expected that mainstream memory technology - NAND Flash - going beyond the 1z nm technology node will face its ultimate scaling limit. Resistive random access memories (RRAM) based on metal oxide is widely considered one of the most prominent next-generation non-volatile memory (NVM) technologies. Its key attributes, including better endurance, retention, speed, low programming voltages, and 3D integration capacity, make it a promising candidate for future SCM. In the first part of this dissertation, I demonstrate ultimate vertical scaling for RRAM in the 3D architecture (3D-RRAM) by employing the atomically thin nature of graphene edge (~3 Å thick). In this architecture, RRAM cell is formulated at the intersection between the pillar electrode and graphene edge electrode. Our 3D-RRAM with graphene edge electrode shows drastic vertical scaling of an individual stack height, allowing our device to stack up to 200 layers, whereas NAND Flash products can only go several tens of layers. Graphene has an outstanding electrical property due to its superior sheet resistance per thickness, and our study by SPICE simulation suggests that our 3D-RRAM can achieve > 100 Gb array size. Our fabricated 2-layer of 3D-RRAM exhibits excellent electrical characteristics, such as high resistance values and good endurance. Moreover, the role of top electrode (TE) and bottom electrode (BE) is exchangeable with each other in our device depending on the initial device programming voltage polarity (the forming process), making it possible to monitor the movement of oxygen ions using Raman image analysis. Due to the low switching voltage in the reverse switching mode, we are able to achieve very low switching power consumption as compared to recently reported RRAMs. This work contributes to research and development of energy efficient, high density non-volatile memory, which is needed to meet the growing demands of storing and processing of data in future computing systems. The last chapter of this dissertation introduces the integration of RRAM on a CMOS logic platform. In this study, we show it is possible to build fully functional RRAMs starting from Si CMOS wafers from a commercial foundry and successfully integrate RRAM as a back end of line (BEOL) on the Si CMOS wafer. In this chapter, I present the architecture of a compact, one-transistor-two-RRAM (1T2R) array, with associated read/write scheme. This chapter describes the process flow of RRAM integration and reports on the evaluation of RRAMs in an array with a memory array test scheme. The development of CMOS-compatible RRAM is also covered in the final chapter.

Download or read book Resistive Switching Random Access Memory Materials and Device Engineering for 3D Architecture written by Hong-Yu Chen and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Since NAND Flash faces challenges in continuing its rapid scaling, resistive switching random access memory (RRAM) has attracted significant attention due to its strong potential as a next generation memory device. A number of high-capacity RRAM chips have recently demonstrated the potential use of RRAM for solid-state storage applications. RRAM has outperformed NAND Flash in many aspects at the singe-device level, so the only remaining question is whether three dimensionally (3D) integrated RRAM can compete with 3D NAND Flash in the cost per bit. Therefore, it is necessary to develop a technology path towards 3D integration for future mass storage. This thesis describes a novel 3D vertical RRAM cross-point array architecture with a cost-effective fabrication process. This 3D RRAM concept is experimentally demonstrated using a double-layer stacked HfOx-based RRAM structure. The device shows excellent and consistent switching characteristics among all the layers, suggesting the potential of stacking even more layers. In the first part of the thesis, a comprehensive overview of vertical-RRAM research, ranging from memory architecture design, corresponding read/write schemes, device fabrication and characterization, interface engineering, array demonstrations, scaling limit investigations, array write-operation robustness, and array analysis is described. Results obtained from both simulations and experiments illustrate the benefits and feasibility of a 3D multi-layer stacked vertical RRAM array. The second part of the thesis presents the exploration of future memory devices with the use of carbon-based nano-materials in resistive switching memories. First, an electrode/oxide interface with inserted single-layer graphene (SLG) raises the low resistance state (LRS) resistance (> M [omega]) due to its intrinsically high out-of-plane resistance in RRAM. The raised LRS enables the design of larger array sizes because applied voltages will drop mostly on memory cells instead of on the interconnect. Next, the interface between the oxide layer and metal electrode is studied using Ramen spectroscopy coupled with electrical measurement. Raman mapping and single point measurements show noticeable changes in both D-band and G-band signals of SLG during electrical cycling. This observation suggests an alternative method to study switching mechanisms in RRAM. Finally, laser scribing is described as an attractive graphene growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. A low-cost, transfer-free, flexible resistive switching device is demonstrated based on laser-scribing reduced graphene oxide (rGO) that exhibits forming-free behavior and stable switching up to 100 cycles. Moreover, reasonable reliability performance and 2-bit storage capability are demonstrated. The control experiments investigate the conducting mechanism of the resistive switching, and the temperature-dependent electrical measurement sheds further light on the working principles of the fabricated resistive switching device.

Download or read book Resistive Switching Oxide Materials Mechanisms Devices and Operations written by Jennifer Rupp and published by Springer Nature. This book was released on 2021-10-15 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Download or read book Resistive Random Access Memory RRAM written by Shimeng Yu and published by Springer Nature. This book was released on 2022-06-01 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.

Download or read book 3D Vertical Resistive Switching Memory Towards Ultrahigh density Non volatile Memory written by Shengjun Qin and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: To meet the exploding information processing and data storage demands, memory technology, as one of the cornerstones in modern computing systems, faces the constant challenge of advancing to the next technology node with a larger capacity and higher density. As difficulties arise in the further scaling of conventional memories, new memories show the potentials to bridge the performance gap between memory and storage, providing new opportunities to innovate computing systems and architectures. Among emerging memories, resistive switching memory (RSM) is a promising solution due to its high device density and reasonably fast write/read operation speed. Resistive random-access memory (RRAM), as an example of RSM, has a simple structure and uses low-temperature fabrication that is compatible with back-end-of-the-line (BEOL) metal wiring of typical CMOS logic technology, thus potentially leading to low cost and on-chip integration with logic for high bandwidth access. Research efforts have been made to explore various material options, device and array structures, and chip architectures. However, to achieve an ultrahigh-density memory, a practical co-design must take into account all the above considerations to arrive at a superior solution. In this dissertation, I present a way to realize ultrahigh-density memory with 3D vertical RRAM (VRRAM). I develop a design guideline for ultrahigh-density 3D VRSM using simulations of 3D memory arrays based on an accurate and computationally efficient model of the memory and parasitic resistance of the memory wired in 3D. I detail the model formulation and validation with physics-based simulations. Combined with simulation results, I discuss design specifications for different physical levels from device to array to chip architecture and provide a comprehensive list of design tasks to achieve an ultrahigh-density 3D VRRAM. To prioritize design tasks among different levels, I focus on the rudimentary design constraints at the device level and extend design requirements to a ready-to-build memory device in the lab. I then experimentally demonstrate an 8-layer 3D Ru/AlOxNy/TiN VRRAM towards an ultrahigh-density memory. This 3D VRRAM satisfies the design requirements for a tera-bit class memory when integrated with a proper selector. I further investigate the downscaling potentials of 3D VRRAM based on experimental data and ongoing scaling techniques and trends in the industry. Incorporating these scaling prospects, I project that 3D VRRAM can achieve a much higher density and capacity with the same number of 3D layers and fewer bits per cell compared to the state-of-the-art 3D NAND. With the structural and process flexibility (e.g., BEOL), 3D VRRAM can expand its high-density applications to be integrated on-chip with CMOS logic for high bandwidth memory access.

Download or read book Resistive Switching written by Daniele Ielmini and published by . This book was released on 2016 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-23 with total page 1010 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Download or read book Metal Oxides for Non volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Download or read book Functional Metal Oxide Nanostructures written by Junqiao Wu and published by Springer Science & Business Media. This book was released on 2011-09-22 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal oxides and particularly their nanostructures have emerged as animportant class of materials with a rich spectrum of properties and greatpotential for device applications. In this book, contributions from leadingexperts emphasize basic physical properties, synthesis and processing, and thelatest applications in such areas as energy, catalysis and data storage. Functional Metal Oxide Nanostructuresis an essential reference for any materials scientist or engineer with aninterest in metal oxides, and particularly in recent progress in defectphysics, strain effects, solution-based synthesis, ionic conduction, and theirapplications.

Download or read book Handbook of Memristor Networks written by Leon Chua and published by Springer Nature. This book was released on 2019-11-12 with total page 1368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Download or read book Memristive Devices for Brain Inspired Computing written by Sabina Spiga and published by Woodhead Publishing. This book was released on 2020-06-12 with total page 569 pages. Available in PDF, EPUB and Kindle. Book excerpt: Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field

Download or read book 3D Flash Memories written by Rino Micheloni and published by Springer. This book was released on 2016-05-26 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability. Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. Features contributions from experts from leading companies in semiconductor memory Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory Includes emerging storage class memory technologies such as phase change memory

Download or read book Flexible Electronics for Electric Vehicles written by Sanjeet Dwivedi and published by Springer Nature. This book was released on 2022-10-04 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book compiles the refereed papers presented during the 2nd Flexible Electronics for Electric Vehicles (FlexEV - 2021). It presents the diligent work of the research community on flexible electronics applications in different allied fields of engineering - engineering materials to electrical engineering to electronics and communication engineering. The theoretical research concepts are supported with extensive reviews highlighting the trends in the possible and real-life applications of electric vehicles. This book will be useful for research scholars, electric vehicles professionals, driving system designers, and postgraduates from allied domains. This book incorporates economical and efficient electric vehicle driving and the latest innovations in electric vehicle technology with their paradigms and methods that employ knowledge in the research community.