Download or read book 1 f Noise in MOSFETs with Ultrathin Gate Dielectrics written by Blaine Jeffrey Gross and published by . This book was released on 1992 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1 f Noise in Hafnium Based High k Gate Dielectric MOSFETs and a Review of Modeling written by Siva Prasad Devireddy and published by ProQuest. This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For next generation MOSFETs, the constant field scaling rule dictates a reduction in the gate oxide thickness among other parameters. Consequently, gate leakage current becomes a serious issue with very thin SiO2 that is conventionally used as gate dielectric since it is the native oxide for Si substrate. This has driven an industry wide search for suitable alternate 'high-k' gate dielectric that has a high value of relative permittivity compared to SiO2 thereby presenting a physically thicker barrier for tunneling carriers while providing a high gate capacitance. Consequently, it is essential to study the properties of these novel materials and the interfaces that they form with the substrate, gate or other dielectrics in a multi-level stack. The main focus of this work is the 1/f noise that is specifically used as a characterization tool to evaluate the performance of high-k MOSFETs. Nevertheless, DC and split C-V characterization are done as well to obtain device performance parameters that are used in the noise analysis. At first, the room temperature 1/f noise characteristics are presented for n- and p-channel poly-Si gated MOSFETs with three different gate dielectrics- HfO2, Al2O3 (top layer)/HfO2 (bottom layer), HfAlOx. The devices had either 1 nm or 4 nm SiO2 interfacial layer, thus presenting an opportunity to understand the effects of interfacial layer thickness on noise and carrier mobility. In the initial study, the analysis of noise is done based on the Unified Flicker Noise Model. Next, a comparative study of 1/f noise behavior is presented for TaSiN (NMOS) and TiN (PMOS) gated MOSFETs with HfO2 gate dielectric and their poly-Si gated counterparts. Additionally, in TaSiN MOSFETs, the effect of the different deposition methods employed for interfacial layer formation on the overall device performance is studied. Finally, the 'Multi-Stack Unified Noise' model (MSUN) is proposed to better model/characterize the 1/f noise in multi-layered high-k MOSFETs. This model takes the non-uniform trap density profile and other physical properties of the constituent gate dielectrics into account. The MSUN model is shown to be in excellent agreement with the experimental data obtained on TaSiN/HfO 2/SiO2 MOSFETs in the 78-350 K range. Additionally, the MSUN model is expressed in terms of surface potential based parameters for inclusion in to the circuit simulators.
Download or read book Miniaturized Transistors written by Lado Filipovic and published by MDPI. This book was released on 2019-06-24 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Download or read book Measurement and Modeling of 1 f Noise in MOSFET Devices with High kappa Material as the Gate Dielectric written by Tanvir Hasan Morshed and published by ProQuest. This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new 1/f noise model has been developed for MOSFET devices with high-kappa gate stack. To investigate the impacts of nitridation, MOSFETs with nitrided high-kappa dielectric was used. These devices were provided by Texas Instruments, having four different interfacial layer thicknesses with a stack composition of SiON/HfSiON. The dominant mechanism affecting the noise behavior of these devices was experimentally determined to be correlated number and mobility fluctuation. The impact of remote phonon scattering was investigated in the temperature range of 172K to 300K. It has been observed that the mobility characteristics of these devices were significantly affected by remote phonon scattering. However, the impact of remote phonon scattering was not observed on the flicker noise characteristics. The new model was developed in the frame work of the original Unified Model incorporating two distinct features that distinguish high-kappa gate stacks from SiO2. The new model considers energy and spatial dependence of trap distribution in the dielectric, thus generates a more realistic trap profile. Furthermore, it incorporates the multi layered structure of the gate stack by considering tunneling of carriers through a double step cascaded barrier. The newly developed model is accordingly called MSUN (Multi Stack Unified Noise) Model, named after the original Unified Model. MSUN Model has been successfully verified with data on MOSFETs having four different interfacial layer thicknesses, in the temperature range of 172K to 300K. The model predictions show very good agreement with data in the bias range of moderate to strong inversion. No specific impact due to nitridation was observed on these devices. The model has been successfully transformed into a compact form which is compatible with leading device simulation package used in the industry.
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Reliability and 1 f Noise Properties of MOSFETs with Nitrided Oxide Gate Dielectrics written by Rajsekhar Jayaraman and published by . This book was released on 1988 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Devices and Circuits written by and published by . This book was released on 2003 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D. and published by Academic Press. This book was released on 2001 with total page 985 pages. Available in PDF, EPUB and Kindle. Book excerpt: Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.
Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Download or read book Electronics written by Michael Olorunfunmi Kolawole and published by CRC Press. This book was released on 2020-06-15 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives clear explanations of the technical aspects of electronics engineering from basic classical device formulations to the use of nanotechnology to develop efficient quantum electronic systems. As well as being up to date, this book provides a broader range of topics than found in many other electronics books. This book is written in a clear, accessible style and covers topics in a comprehensive manner. This book’s approach is strongly application-based with key mathematical techniques introduced, helpful examples used to illustrate the design procedures, and case studies provided where appropriate. By including the fundamentals as well as more advanced techniques, the author has produced an up-to-date reference that meets the requirements of electronics and communications students and professional engineers. Features Discusses formulation and classification of integrated circuits Develops a hierarchical structure of functional logic blocks to build more complex digital logic circuits Outlines the structure of transistors (bipolar, JFET, MOSFET or MOS, CMOS), their processing techniques, their arrangement forming logic gates and digital circuits, optimal pass transistor stages of buffered chain, sources and types of noise, and performance of designed circuits under noisy conditions Explains data conversion processes, choice of the converter types, and inherent errors Describes electronic properties of nanomaterials, the crystallites’ size reduction effect, and the principles of nanoscale structure fabrication Outlines the principles of quantum electronics leading to the development of lasers, masers, reversible quantum gates, and circuits and applications of quantum cells and fabrication methods, including self-assembly (quantum-dot cellular automata) and tunneling (superconducting circuits), and describes quantum error-correction techniques Problems are provided at the end of each chapter to challenge the reader’s understanding
Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.
Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Download or read book VLSI Electronics Microstructure Science written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 7 presents a comprehensive exposition and assessment of the developments and trends in VLSI (Very Large Scale Integration) electronics. This treatise covers subjects that range from microscopic aspects of materials behavior and device performance to the comprehension of VLSI in systems applications. Each chapter is prepared by a recognized authority. The topics contained in this volume include a basic introduction to the application of superconductivity in high-speed digital systems; the expected impact of VLSI technology on the implementation of AI (artificial intelligence); the limits to improvement of silicon integrated circuits; and the various spontaneous noise sources in VLSI circuits and their effect on circuit operation. Scientists, engineers, researchers, device designers, and systems architects will find the book very useful.
Download or read book Microelectronics Technology and Devices written by and published by The Electrochemical Society. This book was released on 2005 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoscaled Semiconductor on Insulator Structures and Devices written by S. Hall and published by Springer Science & Business Media. This book was released on 2007-07-09 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin von Haartman and published by Springer. This book was released on 2009-09-03 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Download or read book Flicker Noise of Scaled NMOS Devices with High K Dielectrics and Metal Gate Electrodes written by Xiaochen Zhang and published by ProQuest. This book was released on 2009 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices has been scaled to the extent where significant tunneling currents flow in the gate terminal. In order to prevent this current flow, high-K materials have been introduced into the gate dielectric stack to increase the physical thickness of the gate insulator, while reducing the equivalent electrical oxide thickness (EOT). The effect is to decrease the tunneling currents by several orders of magnitude and thereby decrease power dissipation while increasing gate density and increasing clock speed. However, several challenges arise in the process of scaling the gate insulator, such as increased trap densities at the silicon interface and in the high-K films, which enhances electron-hole recombination processes and increases the low-frequency noise in these device. This thesis describes the existing theories of 1/f noise and presents the noise characterization of scaled NMOS devices with high-K dielectrics (EOT
