EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Semiconductor Lasers

Download or read book Semiconductor Lasers written by Govind P. Agrawal and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1979 with total page 802 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Laser Diode Microsystems

Download or read book Laser Diode Microsystems written by Hans Zappe and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Diode Microsystems provides the reader with the basic knowledge and understanding required for using semiconductor laser diodes in optical microsystems and micro-optical electromechanic systems. This tutorial addresses the fundamentals of semiconductor laser operation and design, coupled with an overview of the types of laser diodes suitable for use in Microsystems, along with their distinguishing characteristics. Emphasis is placed on laser diode characterization and measurement as well as the assembly techniques and optical accessories required for incorporation of semiconductor lasers into complex microsystems. Equipped with typical results and calculation examples, this hand-on text helps readers to develop a feel for how to choose a laser diode, characterize it and incorporate it into a microsystem.

Book Diode Lasers

    Diode Lasers

    Book Details:
  • Author : D. Sands
  • Publisher : CRC Press
  • Release : 2004-10-30
  • ISBN : 9781420056990
  • Pages : 468 pages

Download or read book Diode Lasers written by D. Sands and published by CRC Press. This book was released on 2004-10-30 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: The compact size, reliability, and low cost of diode lasers lead to applications throughout modern technology-most importantly in modern optical telecommunication systems. This book presents a comprehensive introduction to the principles and operation of diode lasers. It begins with a review of semiconductor physics and laser fundamentals, before describing the most basic homojunction laser. Later chapters describe more advanced laser types and their applications, including the most recently developed and exotic laser designs. The author's intuitive style, coupled with an extensive set of worked examples and sample problems, make this an outstanding introduction to the subject.

Book Semiconductor Lasers

    Semiconductor Lasers

    Book Details:
  • Author : Junji Ohtsubo
  • Publisher : Springer
  • Release : 2017-05-03
  • ISBN : 3319561383
  • Pages : 679 pages

Download or read book Semiconductor Lasers written by Junji Ohtsubo and published by Springer. This book was released on 2017-05-03 with total page 679 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in semiconductor lasers are discussed, but also for example the method of self-mixing interferometry in quantum-cascade lasers, which is indispensable in practical applications. Further, this edition covers chaos synchronization between two lasers and the application to secure optical communications. Another new topic is the consistency and synchronization property of many coupled semiconductor lasers in connection with the analogy of the dynamics between synaptic neurons and chaotic semiconductor lasers, which are compatible nonlinear dynamic elements. In particular, zero-lag synchronization between distant neurons plays a crucial role for information processing in the brain. Lastly, the book presents an application of the consistency and synchronization property in chaotic semiconductor lasers, namely a type of neuro-inspired information processing referred to as reservoir computing.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Semiconductor Laser Engineering Reliability and Diagnostics

Download or read book Semiconductor Laser Engineering Reliability and Diagnostics written by Peter W. Epperlein and published by John Wiley & Sons. This book was released on 2013-01-25 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.

Book Selected Papers on Semiconductor Diode Lasers

Download or read book Selected Papers on Semiconductor Diode Lasers written by James J. Coleman and published by SPIE-International Society for Optical Engineering. This book was released on 1992 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Mid infrared Type I Diode Laser Design Using Molecular Beam Epitaxy

Download or read book Mid infrared Type I Diode Laser Design Using Molecular Beam Epitaxy written by Scott Daniel Sifferman and published by . This book was released on 2020 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: The mid-infrared region of the electromagnetic spectrum, particularly in the wavelength range between 3 and 5 μm, is important for a number of applications in spectroscopy, gas sensing, infrared countermeasures, and communications. Despite these motivations, mid-infrared laser development has lagged behind that of visible and near-infrared technology. This is in part because semiconductor laser sources, while they exist across the mid-infrared, suffer from one or several drawbacks such as high power consumption, high threshold currents, low characteristic temperatures, limited wallplug efficiency, parasitic non-radiative recombination processes, or reduced carrier confinement. The latter impediment, specifically reduced carrier confinement of holes, is endemic to the active regions of GaSb-based type-I quantum-well diode lasers as the optical emission wavelength is extended past 3 μm. In this work, we present our efforts toward enhancing mid-infrared active regions to extend the emission wavelength of type-I emitters. Through the use of highly-strained, high indium-content quantum wells we demonstrate type-I diode laser operation from aluminum-free active regions up to 3.62 μm, and photoluminescence emission from type-I quantum wells out past 4 μm. Additional studies focused on the effect of using bismuth during the growth of these materials. While increased compressive strain in the quantum well alloy enables greater hole confinement at longer emission wavelengths, it also leads to material roughening and defect formation that restrict the number of and thickness of strained regions that can be grown before material quality irreparably degrades. We observed that by using bismuth as a surfactant during the growth of highly-strained GaIn(As)Sb alloys, material degradation was suppressed as these materials were grown well beyond classical critical thickness limits. We were also able to leverage the epitaxial growth conditions used for highly-strained, high indium-content quantum wells to incorporate dilute amounts of bismuth, up to 3%, into the quantum well materials. The addition of bismuth to the quantum well alloys modifies the valence band to provide additional hole confinement, leading to brighter emitters with up to 34% higher peak intensity. It also resulted in overall lower materials strain without reducing the emission wavelength or performance. This opens a promising approach to overcome strain-related limitations to laser performance and emission wavelength, allowing for device designs with increased numbers of quantum wells and potentially reducing the effects of gain saturation. An additional path toward improved mid-infrared devices is to switch the quantum well barrier material from GaSb to a lattice-matched AlGaAsSb alloy. This is the same strategy employed for many other mid-infrared type-I diode lasers, albeit for emission wavelengths less than 3.1 μm. By changing the barrier alloy, the quantum well valence band offset is increased, providing stronger hole confinement. Coupling these barriers with the highly-strained, high indium-content quantum wells results in a 3× improvement in peak photoluminescence and a >30% reduction in emission linewidth for quantum wells operating up to 4.2 μm. Using this coupled approach, we propose a laser diode device designed to operate at 4.1 μm

Book Rare Earth Doped Fiber Lasers and Amplifiers Revised and Expanded

Download or read book Rare Earth Doped Fiber Lasers and Amplifiers Revised and Expanded written by Michel J.F. Digonnet and published by CRC Press. This book was released on 2001-05-31 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the theories, operating characteristics, and current technology of main fiber laser and amplifier devices based on rare-earth-doped silica and fluorozirconate fibers. It describes the principles, designs, and properties of the erbium-doped fiber amplifier and its role as the cornerstone component in optical communication systems. This second edition contains new and revised material reflecting major developments in academia and industry.