Download or read book 2001 International Symposium on VLSI Technology Systems and Applications written by IEEE, Taipei Section Staff and published by . This book was released on 2001 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Understanding Logic Locking written by Kimia Zamiri Azar and published by Springer Nature. This book was released on 2023-10-24 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates the breadth and depth of IP protection through logic locking, considering both attacker/adversary and defender/designer perspectives. The authors draw a semi-chronological picture of the evolution of logic locking during the last decade, gathering and describing all the DO’s and DON’Ts in this approach. They describe simple-to-follow scenarios and guide readers to navigate/identify threat models and design/evaluation flow for further studies. Readers will gain a comprehensive understanding of all fundamentals of logic locking.

Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory

Download or read book Metallurgy written by Yogiraj Pardhi and published by BoD – Books on Demand. This book was released on 2012-09-19 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent decades scientists and engineers around the globe have been responding to the requirement of high performance materials through innovative material research and engineering. The ever increasing demand on quality and reliability has resulted in some dazzling technological achievements in the area of advanced materials and manufacturing. The purpose of this book is to bring together significant findings of leading experts, in developing and improving the technology that supports advanced materials and process development. From gold nano-structures to advanced superalloys, this book covers investigations involving modern computer based approaches as well as traditional experimental techniques. Selected articles include research findings on advances made in materials that are used not only in complex structures such as aeroplanes but also in clinical treatments. It is envisaged that it will promote knowledge transfer across the materials society including university students, engineers and scientists to built further understanding of the subject.

Download or read book Network and Parallel Computing written by Ching-Hsien Hsu and published by Springer. This book was released on 2014-08-23 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the proceedings of the 11th IFIP WG 10.3 International Conference on Network and Parallel Computing, NPC 2014, held in Ilan, Taiwan, in September 2014. The 42 full papers and 24 poster papers presented were carefully reviewed and selected from 196 submissions. They are organized in topical sections on systems, networks, and architectures, parallel and multi-core technologies, virtualization and cloud computing technologies, applications of parallel and distributed computing, and I/O, file systems, and data management.

Download or read book Recent Trends in Intelligent and Emerging Systems written by Kandarpa Kumar Sarma and published by Springer. This book was released on 2015-06-09 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is a compilation of research works related to intelligent and emerging system design using a range of tools including soft-computation. The book includes reviews, actual designs, research works, discussion and experimental results related to works in the areas of communication, computation, vision sciences, bio-inspired system design, social dynamic, related process design, etc. The audience of this book is expected to be researchers who deal with intelligent and emerging system design through mathematical and computational modeling and experimental designs. Specifically, audiences that are broadly involved in the domains of electronics and communication, electrical engineering, mathematics, computer science, other applied informatics domains and related areas will find the book interesting. The works included in the book broadly covers all areas of Electronics and Communication Engineering and Technology, Soft-computational Applications, Human Computer Interactive Designs and Social and Economic Dynamics. The works included in the volume have been grouped into Communication, Biomedical and Social Science, HCI and Bio-inspired System Design, Speech Processing and Review totaling sixteen contributions.

Download or read book 3D Flash Memories written by Rino Micheloni and published by Springer. This book was released on 2016-05-26 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

Download or read book Handbook of 3D Integration Volume 3 written by Philip Garrou and published by John Wiley & Sons. This book was released on 2014-07-21 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading for materials scientists, semiconductor physicists, and those working in the semiconductor industry, as well as IT and electrical engineers.

Download or read book Advances in Imaging and Electron Physics written by and published by Academic Press. This book was released on 2012-11-01 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. - Contributions from leading authorities - Informs and updates on all the latest developments in the field

Download or read book The Predictive Technology Model in the Late Silicon Era and Beyond written by Yu Cao and published by Now Publishers Inc. This book was released on 2010 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aggressive scaling of CMOS technology has inevitably led to vastly increased power dissipation, process variability and reliability degradation, posing tremendous challenges to robust circuit design. To continue the success of integrated circuits, advanced design research must start in parallel with or even ahead of technology development. This new paradigm requires the Predictive Technology Model (PTM) for future technology generations, including nanoscale CMOS and post-silicon devices. This paper presents a comprehensive set of predictive modeling developments. Starting from the PTM of traditional CMOS devices, it extends to CMOS alternatives at the end of the silicon roadmap, such as strained Si, high-k/metal gate, and FinFET devices. The impact of process variation and the aging effect is further captured by modeling the device parameters under the influence. Beyond the silicon roadmap, the PTM outreaches to revolutionary devices, especially carbon-based transistor and interconnect, in order to support explorative design research. Overall, these predictive device models enable early stage design exploration with increasing technology diversity, helping shed light on the opportunities and challenges in the nanoelectronics era.

Download or read book Scalability and Reliability of Phase Change Memory written by SangBum Kim and published by Stanford University. This book was released on 2010 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt: Various memory devices are being widely used for a wide range of applications. There has not been any universal memory device so far because each memory device has a unique set of features. Large performance gaps in various dimensions of features between memory devices and a new set of features required by new electronic systems such as portable electronics open up new opportunities for new memory devices to emerge as mainstream memory devices. Besides, the imminent scaling limit for existing mainstream memory devices also motivates development and research of new memory devices which can meet the increasing demand for large memory capacity. Phase change memory (PCM) is one of the most promising emerging memory devices. It has the potential to combine DRAM-like features such as bit alteration, fast read and write, and good endurance and Flash-like features such as non-volatility and a simple structure. PCM is expected to be a highly scalable technology extending beyond scaling limit of existing memory devices. Prototypical PCM chips have been developed and are being tested for targeted memory applications. However, understanding of fundament physics behind PCM operation is still lacking because the key material in PCM devices, the chalcogenide, is relatively new for use in solid state devices. Evaluation and development of PCM technology as successful mainstream memory devices require more study on PCM devices. This thesis focuses on issues relevant to scalability and reliability of PCM which are two of the most important qualities that new emerging memory devices should demonstrate. We first study basic scaling rule based on thermoelectric analysis on the maximum temperature in a PCM cell and show that both isotropic and non-isotropic scaling result in constant programming voltage. The minimum programming voltage is determined by material properties such as electrical resistivity and thermal conductivity regardless of the device size. These results highlight first-order principles governing scaling rules. In the first-order scaling rule analysis, we assume that material properties are constant regardless of its physical size. However, when materials are scaled down to the nanometer regime, material properties can change because the relative contribution from the surface property to the overall system property increases compared to that from the bulk property. We study scaling effect on material property and device characteristics using a novel device structure -- a PCM cell with a pseudo electrode. With the pseudo electrode PCM cell, we can accurately relate the observed properties to the amorphous region size. We show that threshold switching voltage scales linearly with thickness of the amorphous region and threshold switching field drifts in time after programming. We also show that the drift coefficient for resistance drift stays the same for scaled devices. These property scaling results provide not only estimates for scaled device characteristics but also clues for modeling and understanding mechanisms for threshold switching and drift. To make scaled memory cells in an array form, not only memory device elements but also selection devices need to be scaled. PCM requires relatively large programming current, which makes it challenging to scale down selection devices. We integrate Ge nanowire diodes as selection devices in search for new candidates for high density PCM. Ge nanowire diode provides on/off ratio of ~100 and small contact area of 40 nm in diameter which results in programming current below 200 [mu]A. The processing temperature for Ge nanowire diode is below 400°C, which makes Ge nanowire diode a potential enabler for 3D integration. As memory devices are scaled down, more serious reliability issues arise. We study the reliability of PCM using a novel structure -- micro-thermal stage (MTS). The high-resistance-state (RESET) resistance and threshold switching voltage are important device characteristics for reliable operation of PCM devices. We study the drift behavior of RESET resistance and threshold switching voltage and its temperature dependence using the MTS. Results show that the drift coefficient increases proportionally to annealing temperature until it saturates. The analytical drift model for time-varying annealing temperature that we derive from existing phenomenological drift models agrees well with the measurement results. The analytical drift model can be used to estimate the impact of thermal disturbance (program disturbance) on RESET resistance and threshold switching voltage. Thermal disturbance is a unique disturbance mechanism in PCM which is caused by thermal diffusion from a cell being programmed. The MTS can effectively emulate the short heat pulse, enabling detailed study on thermal disturbance impact on cell characteristics. We show that random thermal disturbance can result in at least 25 and 100 % variations in RESET resistance and threshold switching voltage. The existing model on how to add up the impact of thermal disturbance on crystallization is experimentally verified using the MTS. Based on measurement and modeling results, we propose a new programming scheme to improve stability of PCM with a short-time annealing pulse.

Download or read book Dual Mode Logic written by Itamar Levi and published by Springer Nature. This book was released on 2020-12-15 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents Dual Mode Logic (DML), a new design paradigm for digital integrated circuits. DML logic gates can operate in two modes, each optimized for a different metric. Its on-the-fly switching between these operational modes at the gate, block and system levels provide maximal E-D optimization flexibility. Each highly detailed chapter has multiple illustrations showing how the DML paradigm seamlessly implements digital circuits that dissipate less energy while simultaneously improving performance and reducing area without a significant compromise in reliability. All the facets of the DML methodology are covered, starting from basic concepts, through single gate optimization, general module optimization, design trade-offs and new ways DML can be integrated into standard design flows using standard EDA tools. DML logic is compatible with numerous applications but is particularly advantageous for ultra-low power, reliable high performance systems, and advanced scaled technologies Written in language accessible to students and design engineers, each topic is oriented toward immediate application by all those interested in an alternative to CMOS logic. Describes a novel, promising alternative to conventional CMOS logic, known as Dual Mode Logic (DML), with which a single gate can be operated selectively in two modes, each optimized for a different metric (e.g., energy consumption, performance, size); Demonstrates several techniques at the architectural level, which can result in high energy savings and improved system performance; Focuses on the tradeoffs between power, area and speed including optimizations at the transistor and gate level, including alternatives to DML basic cells; Illustrates DML efficiency for a variety of VLSI applications.

Download or read book FinFET Devices for VLSI Circuits and Systems written by Samar K. Saha and published by CRC Press. This book was released on 2020-07-15 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.

Download or read book Energy Efficient Communication Processors written by Robert Fasthuber and published by Springer Science & Business Media. This book was released on 2013-05-29 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes a new design approach for energy-efficient, Domain-Specific Instruction set Processor (DSIP) architectures for the wireless baseband domain. The innovative techniques presented enable co-design of algorithms, architectures and technology, for efficient implementation of the most advanced technologies. To demonstrate the feasibility of the author’s design approach, case studies are included for crucial functionality of advanced wireless systems with increased computational performance, flexibility and reusability. Designers using this approach will benefit from reduced development/product costs and greater scalability to future process technology nodes.

Download or read book Smart Sensors and MEMS written by S Nihtianov and published by Woodhead Publishing. This book was released on 2018-02-27 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Smart Sensors and MEMS: Intelligent Devices and Microsystems for Industrial Applications, Second Edition highlights new, important developments in the field, including the latest on magnetic sensors, temperature sensors and microreaction chambers. The book outlines the industrial applications for smart sensors, covering direct interface circuits for sensors, capacitive sensors for displacement measurement in the sub-nanometer range, integrated inductive displacement sensors for harsh industrial environments, advanced silicon radiation detectors in the vacuum ultraviolet (VUV) and extreme ultraviolet (EUV) spectral range, among other topics. New sections include discussions on magnetic and temperature sensors and the industrial applications of smart micro-electro-mechanical systems (MEMS). The book is an invaluable reference for academics, materials scientists and electrical engineers working in the microelectronics, sensors and micromechanics industry. In addition, engineers looking for industrial sensing, monitoring and automation solutions will find this a comprehensive source of information. - Contains new chapters that address key applications, such as magnetic sensors, microreaction chambers and temperature sensors - Provides an in-depth information on a wide array of industrial applications for smart sensors and smart MEMS - Presents the only book to discuss both smart sensors and MEMS for industrial applications

Download or read book Power Distribution Networks with On Chip Decoupling Capacitors written by Renatas Jakushokas and published by Springer Science & Business Media. This book was released on 2010-11-23 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes methods for distributing power in high speed, high complexity integrated circuits with power levels exceeding many tens of watts and power supplies below a volt. It provides a broad and cohesive treatment of power distribution systems and related design problems, including both circuit network models and design techniques for on-chip decoupling capacitors, providing insight and intuition into the behavior and design of on-chip power distribution systems. Organized into subareas to provide a more intuitive flow to the reader, this second edition adds more than a hundred pages of new content, including inductance models for interdigitated structures, design strategies for multi-layer power grids, advanced methods for efficient power grid design and analysis, and methodologies for simultaneously placing on-chip multiple power supplies and decoupling capacitors. The emphasis of this additional material is on managing the complexity of on-chip power distribution networks.

Download or read book Design of CMOS RF Integrated Circuits and Systems written by Kiat Seng Yeo and published by World Scientific. This book was released on 2010 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.