Download or read book Hot Carrier Reliability of MOS VLSI Circuits written by Yusuf Leblebici and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Download or read book Hot Carrier Effects in MOS Devices written by Eiji Takeda and published by Elsevier. This book was released on 1995-11-28 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. - Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book - The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field - The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions - Provides the most complete review of device degradation mechanisms as well as drain engineering methods - Contains the most extensive reference list on the subject
Download or read book Hot Carrier Design Considerations for MOS Devices and Circuits written by Cheng Wang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific. This book was released on 2007 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Download or read book Microelectronic Manufacturing Yield Reliability and Failure Analysis written by and published by . This book was released on 1997 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1996 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Principles of VLSI Design Symmetry Structures and Methods written by Hongjiang Song and published by Lulu.com. This book was released on 2016-06-03 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the textbook for Dr. Hongjiang Song's EEE598: VLSI Analog Circuit Design Based Symmetry class in Ira A. Fulton Schools of Engineering at Arizona State University. The course introduces structural VLSI analog circuit design concepts and techniques for analog circuit blocks and systems, such as the operational amplifiers, PLL/DLL, bandgap reference, A/D D/A converters. Symmetry principles and associated circuit constraints, structures and methods are adopted to mitigate VLSI PVT and other variations for better circuit performance, functionality, and design productivity across multiple VLSI process nodes.
Download or read book Low Power Variation Tolerant Design in Nanometer Silicon written by Swarup Bhunia and published by Springer Science & Business Media. This book was released on 2010-11-10 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design considerations for low-power operations and robustness with respect to variations typically impose contradictory requirements. Low-power design techniques such as voltage scaling, dual-threshold assignment and gate sizing can have large negative impact on parametric yield under process variations. This book focuses on circuit/architectural design techniques for achieving low power operation under parameter variations. We consider both logic and memory design aspects and cover modeling and analysis, as well as design methodology to achieve simultaneously low power and variation tolerance, while minimizing design overhead. This book will discuss current industrial practices and emerging challenges at future technology nodes.
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book BiCMOS Technology and Applications written by Antonio R. Alvarez and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Download or read book Statistical Performance Analysis and Modeling Techniques for Nanometer VLSI Designs written by Ruijing Shen and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since process variation and chip performance uncertainties have become more pronounced as technologies scale down into the nanometer regime, accurate and efficient modeling or characterization of variations from the device to the architecture level have become imperative for the successful design of VLSI chips. This book provides readers with tools for variation-aware design methodologies and computer-aided design (CAD) of VLSI systems, in the presence of process variations at the nanometer scale. It presents the latest developments for modeling and analysis, with a focus on statistical interconnect modeling, statistical parasitic extractions, statistical full-chip leakage and dynamic power analysis considering spatial correlations, statistical analysis and modeling for large global interconnects and analog/mixed-signal circuits. Provides readers with timely, systematic and comprehensive treatments of statistical modeling and analysis of VLSI systems with a focus on interconnects, on-chip power grids and clock networks, and analog/mixed-signal circuits; Helps chip designers understand the potential and limitations of their design tools, improving their design productivity; Presents analysis of each algorithm with practical applications in the context of real circuit design; Includes numerical examples for the quantitative analysis and evaluation of algorithms presented. Provides readers with timely, systematic and comprehensive treatments of statistical modeling and analysis of VLSI systems with a focus on interconnects, on-chip power grids and clock networks, and analog/mixed-signal circuits; Helps chip designers understand the potential and limitations of their design tools, improving their design productivity; Presents analysis of each algorithm with practical applications in the context of real circuit design; Includes numerical examples for the quantitative analysis and evaluation of algorithms presented.
Download or read book Digest of Technical Papers written by and published by . This book was released on 1987 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Power Electronics Design written by Christian Piguet and published by CRC Press. This book was released on 2018-10-03 with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt: The power consumption of integrated circuits is one of the most problematic considerations affecting the design of high-performance chips and portable devices. The study of power-saving design methodologies now must also include subjects such as systems on chips, embedded software, and the future of microelectronics. Low-Power Electronics Design covers all major aspects of low-power design of ICs in deep submicron technologies and addresses emerging topics related to future design. This volume explores, in individual chapters written by expert authors, the many low-power techniques born during the past decade. It also discusses the many different domains and disciplines that impact power consumption, including processors, complex circuits, software, CAD tools, and energy sources and management. The authors delve into what many specialists predict about the future by presenting techniques that are promising but are not yet reality. They investigate nanotechnologies, optical circuits, ad hoc networks, e-textiles, as well as human powered sources of energy. Low-Power Electronics Design delivers a complete picture of today's methods for reducing power, and also illustrates the advances in chip design that may be commonplace 10 or 15 years from now.
Download or read book Silicon Photonics for High Performance Computing and Beyond written by Mahdi Nikdast and published by CRC Press. This book was released on 2021-11-17 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon photonics is beginning to play an important role in driving innovations in communication and computation for an increasing number of applications, from health care and biomedical sensors to autonomous driving, datacenter networking, and security. In recent years, there has been a significant amount of effort in industry and academia to innovate, design, develop, analyze, optimize, and fabricate systems employing silicon photonics, shaping the future of not only Datacom and telecom technology but also high-performance computing and emerging computing paradigms, such as optical computing and artificial intelligence. Different from existing books in this area, Silicon Photonics for High-Performance Computing and Beyond presents a comprehensive overview of the current state-of-the-art technology and research achievements in applying silicon photonics for communication and computation. It focuses on various design, development, and integration challenges, reviews the latest advances spanning materials, devices, circuits, systems, and applications. Technical topics discussed in the book include: • Requirements and the latest advances in high-performance computing systems • Device- and system-level challenges and latest improvements to deploy silicon photonics in computing systems • Novel design solutions and design automation techniques for silicon photonic integrated circuits • Novel materials, devices, and photonic integrated circuits on silicon • Emerging computing technologies and applications based on silicon photonics Silicon Photonics for High-Performance Computing and Beyond presents a compilation of 19 outstanding contributions from academic and industry pioneers in the field. The selected contributions present insightful discussions and innovative approaches to understand current and future bottlenecks in high-performance computing systems and traditional computing platforms, and the promise of silicon photonics to address those challenges. It is ideal for researchers and engineers working in the photonics, electrical, and computer engineering industries as well as academic researchers and graduate students (M.S. and Ph.D.) in computer science and engineering, electronic and electrical engineering, applied physics, photonics, and optics.
Download or read book Istfa 98 written by ASM International and published by ASM International. This book was released on 1998-01-01 with total page 453 pages. Available in PDF, EPUB and Kindle. Book excerpt:
