Download or read book Radio Frequency Transistors written by Helge Granberg and published by Elsevier. This book was released on 2013-10-22 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cellular telephones, satellite communications and radar systems are adding to the increasing demand for radio frequency circuit design principles. At the same time, several generations of digitally-oriented graduates are missing the essential RF skills. This book contains a wealth of valuable design information difficult to find elsewhere.It's a complete 'tool kit' for successful RF circuit design. Written by experienced RF design engineers from Motorola's semiconductors product section.Book covers design examples of circuits (e.g. amplifiers; oscillators; switches; pulsed power; modular systems; wiring state-of-the-art devices; design techniques).

Download or read book Transistors for Low Frequency Applications written by Philips Electrical Industries Pty., ltd. Electronic Tube Division and published by . This book was released on 1956 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties and Applications of Transistors written by J. P. Vasseur and published by Elsevier. This book was released on 2016-06-06 with total page 473 pages. Available in PDF, EPUB and Kindle. Book excerpt: Properties and Applications of Transistors focuses on the evolution of transistors as one of the essential elements of modern electronics. The book first provides information on the physical principles of transistors, including conductivity of semiconductors, junction transistors, and transistor technology. The text also looks at the general discussion of linear two-ports. Topics include equivalent circuits for a two-port; relations between the two-ports corresponding to the possible methods of connection of transistors; and elements of matrix algebra. The selection also highlights the capabilities of transistors as linear-amplifiers. The stability and neutralization of transistors; measurement of power gain; transistors with complex base resistance; and point contact transistors at low frequencies are discussed. The text also looks at the maximum ratings of transistors, including maximum voltage and current, cooling by natural convection, and thermal runaway. The book is a vital reference for readers wanting to study transistors.

Download or read book Study of Class C Applications of Power Transistors at High and Very High Frequencies written by Stanford University Stanford Electronics Laboratories and published by . This book was released on 1963 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Class C Applications of Power Transistors at High and Very High Frequencies written by Robert Byron Ward and published by . This book was released on 1963 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physical Principles and Applications of Junction Transistors written by John Hamilton Simpson and published by Oxford : Clarendon Press. This book was released on 1962 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low frequency Noise Figure and Its Application to the Measurement of Certain Transistor Parameters written by James F. Gibbons and published by . This book was released on 1962 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Multigate Transistors for High Frequency Applications written by K. Sivasankaran and published by Springer Nature. This book was released on 2023-03-27 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.

Download or read book Field Effect Transistor Applications written by William Gosling and published by . This book was released on 1964 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Basic Theory and Application of Transistors written by United States. Dept. of the Army and published by Dover Publications. This book was released on 1959 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Transistor Applications written by Richard F. Shea and published by . This book was released on 1964 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor, Thyristor, MOS, FET.

Download or read book Transistor Circuits and Applications written by Laurence G. Cowles and published by Prentice Hall. This book was released on 1974 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Frequency Transistors Low Frequency Power Transistors written by and published by . This book was released on 1975 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Frequency 1 f Noise of P MOS Bipolar and Lateral Bipolar Transistors written by Mark Cheng and published by . This book was released on 2000 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency 1/f noise are mobility fluctuations and number fluctuations. Our 1/f noise measurements in p-MOSFET's, bipolar transistors, and lateral pnp bipolar transistors were done at frequencies of 1 Hz and 1 KHz respectively by both the automatic and analog methods. The measurement results suggest that the number fluctuation and mobility fluctuation models are applied for short channel and long channel p-MOSFET's in the saturation region respectively. Simulations have been done using PSPICE, with noise level NLEV=0 and device model level 3 for long channel p-MOSFET's; with noise level NLEV=2 and device model level 6 for short channel p-MOSFET's. Theoretical considerations as well as experimental results show that it is possible to take advantage of MOSFET and bipolar devices for low noise integrated circuit applications. Research on low frequency 1/f noise in the different semiconductor devices is very important to determine the best semiconductor structure and best noise model for different devices. This is an especially important consideration in the development of the integrated circuits in high-density chip area, low voltage supply, low power consumption and low noise applications.

Download or read book High frequency Application of Semiconductor Devices written by Ferenc Kovács and published by Elsevier Science & Technology. This book was released on 1981 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radio Frequency Microelectronic Circuits for Telecommunication Applications written by Yannis E. Papananos and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radio-Frequency Microelectronic Circuits for Telecommunication Applications covers the design issues of radio-frequency microelectronic circuits for telecommunication applications with emphasis on devices and circuit-level design. It uses a large number of real examples from industrial design as a vehicle both to teach the principles and to ensure relevance starting from device level modeling to basic RF microelectronic circuit cell design. Modeling for high-frequency operation of both active and passive integrated devices is covered starting from the bipolar transistor to the MOS transistor to the modeling of integrated spiral inductors, resistors, capacitors, varactors and package parasitics structures. A chapter is also devoted to the presentation of the basic definitions and terminology used in RF IC design. The book continues with the presentation of the principal building blocks of an integrated RF front-end, namely, the LNA, the mixer, the VCO and integrated filters. Design paradigms are provided classified on the technology used in each case: pure bipolar, CMOS, BiCMOS or SiGe. Radio-Frequency Microelectronic Circuits for Telecommunication Applications is essential reading for all researchers, practising engineers and designers working in RF electronics. It is also a reference for use in advanced undergraduate or graduate courses in the same field.

Download or read book Low frequency Power Transistors written by Philips and published by . This book was released on 197? with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: