Download or read book Proceedings of the Symposium on III V Opto Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Download or read book Fundamentals of Solar Cells and Photovoltaic Systems Engineering written by Marta Victoria and published by Elsevier. This book was released on 2024-06-08 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Solar Cells and Photovoltaic Systems Engineering presents all the major topics relevant to understanding photovoltaic technology, including the working principles of solar cells, modeling and measuring solar radiation, manufacturing processes for solar cells and photovoltaic modules, the design and operation of rooftop installations and large-scale power plants, the economics of such systems, and the role of photovoltaic solar energy in the ongoing energy transition. This book is intended for use as a textbook on photovoltaic solar energy for upper-level undergraduate/graduate engineering students. - Consists of 15 chapters, including basic theory, along with problems to solve and a solutions manual - Provides a basic understanding of topics such as semiconductor fundamentals, the pn junction, and the working principle of solar cells for students without previous experience - Covers the design and operation principles of rooftop installations and large-scale solar power plants - Presents the IV curve and efficiency attained by solar cells, photovoltaic modules, and systems, how they are impacted by solar radiation and temperature, and how they can be measured

Download or read book Silicon Germanium Materials and Devices A Market and Technology Overview to 2006 written by R. Szweda and published by Elsevier. This book was released on 2002-11-26 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Download or read book Compound Semiconductor written by and published by . This book was released on 2004 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Nanostructured Materials and Nanotechnology Five Volume Set written by Hari Singh Nalwa and published by Academic Press. This book was released on 1999-10-29 with total page 3593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured materials is one of the hottest and fastest growing areas in today's materials science field, along with the related field of solid state physics. Nanostructured materials and their based technologies have opened up exciting new possibilites for future applications in a number of areas including aerospace, automotive, x-ray technology, batteries, sensors, color imaging, printing, computer chips, medical implants, pharmacy, and cosmetics. The ability to change properties on the atomic level promises a revolution in many realms of science and technology. Thus, this book details the high level of activity and significant findings are available for those involved in research and development in the field. It also covers industrial findings and corporate support. This five-volume set summarizes fundamentals of nano-science in a comprehensive way. The contributors enlisted by the editor are at elite institutions worldwide. Key Features * Provides comprehensive coverage of the dominant technology of the 21st century * Written by 127 authors from 16 countries, making this truly international * First and only reference to cover all aspects of nanostructured materials and nanotechnology

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book Subject Guide to Books in Print written by and published by . This book was released on 1991 with total page 2460 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

Download or read book Optics Education written by and published by . This book was released on 2001 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book InP and Related Compounds written by M O Manasreh and published by CRC Press. This book was released on 2000-08-08 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser d

Download or read book Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.

Download or read book Directory of Federal Laboratory and Technology Resources written by and published by DIANE Publishing. This book was released on 1994 with total page 727 pages. Available in PDF, EPUB and Kindle. Book excerpt: Describes the individual capabilities of each of 1,900 unique resources in the federal laboratory system, and provides the name and phone number of each contact. Includes government laboratories, research centers, testing facilities, and special technology information centers. Also includes a list of all federal laboratory technology transfer offices. Organized into 72 subject areas. Detailed indices.

Download or read book Directory of Federal Laboratory Technology Resources written by and published by . This book was released on 1993 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Flat Panel Display Technologies written by Lawrence Tannas Jr. and published by Elsevier. This book was released on 1995-12-31 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: Large scale manufacturing of liquid crystal flat panel displays (LCDs) by Japan brought the world's attention to the existence of an enormous market potential exists when there are alternatives to the cathode ray tube (CRT). The Japanese have recognized that new display technologies are critical to making their products highly competitive in the world market. The CRT is losing market share to the solid-state flat panel display. Japan currently holds 90% of the market, and this book outlines opportunities in the former Soviet Union, where companies with the necessary technology are seeking partners, investment, and manufacturing opportunities. Entire cities that were once not even on the map due to their military mission, are now appearing, filled with state-of-the-art electronic technology. The book is developed from the reports issued by investigators based on their field visits to 33 sites in Japan, and 26 sites in Russia, Ukraine, and Belarus.

Download or read book Diode Laser Materials and Devices A Worldwide Market and Technology Overview to 2005 written by R. Szweda and published by Elsevier. This book was released on 2001-12-20 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices. The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made. The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years. However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data. Chapter 1 is an introduction to the market study. Chapter 2 contains an executive summary. Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application. Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described. The application data are presented for the following industrial groups: • Automotive • Computers • Consumer • Industrial • Military and Aerospace • Telecommunications • Others A full 5-year forecast and analysis is provided by application and region. Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices. This process is crystal growth and involves the following sequence: • Bulk growth of single crystals • Epitaxial growth of semiconductor single crystal layers • Ion implantation • Device fabrication, ie gate and contact formation, etc • Packaging & test Chapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices. Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research. Chapter 8 is a directory of suppliers. Chapter 9 provides acronyms and exchange rates.

Download or read book Semiconductor Devices and Integrated Electronics written by A. G. Milnes and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.