Download or read book Thermal Physics and Semiconductor Device English Edition written by Dr. Vikram Singh and published by Thakur Publication Private Limited. This book was released on 2022-01-16 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thakur Publication proudly presents the "Thermal Physics and Semiconductor Devices" e-Book, specifically designed for B.Sc 2nd Year students at U.P. State Universities. This comprehensive e-Book serves as an indispensable resource for understanding the fundamental principles and applications of thermal physics and semiconductor devices. Authored by subject matter experts, this English edition e-Book covers the common syllabus prescribed by U.P. State Universities. It delves into the fascinating realms of thermal physics, exploring concepts such as heat transfer, thermodynamics, and kinetic theory. Additionally, it provides a detailed examination of semiconductor devices, including diodes, transistors, and integrated circuits.
Download or read book Physics of Semiconductor Devices written by Massimo Rudan and published by Springer. This book was released on 2017-09-27 with total page 936 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.
Download or read book Semiconductor Devices Physics and Technology written by S. M. Sze and published by . This book was released on 2013 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Sturge s Statistical and Thermal Physics Second Edition written by Jeffrey Olafsen and published by CRC Press. This book was released on 2019-07-26 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: The original work by M.D. Sturge has been updated and expanded to include new chapters covering non-equilibrium and biological systems. This second edition re-organizes the material in a more natural manner into four parts that continues to assume no previous knowledge of thermodynamics. The four divisions of the material introduce the subject inductively and rigorously, beginning with key concepts of equilibrium thermodynamics such as heat, temperature and entropy. The second division focuses on the fundamentals of modern thermodynamics: free energy, chemical potential and the partition function. The second half of the book is then designed with the flexibility to meet the needs of both the instructor and the students, with a third section focused on the different types of gases: ideal, Fermi-Dirac, Bose-Einstein, Black Body Radiation and the Photon gases. In the fourth and final division of the book, modern thermostatistical applications are addressed: semiconductors, phase transitions, transport processes, and finally the new chapters on non-equilibrium and biological systems. Key Features: Provides the most readable, thorough introduction to statistical physics and thermodynamics, with magnetic, atomic, and electrical systems addressed alongside development of fundamental topics at a non-rigorous mathematical level Includes brand-new chapters on biological and chemical systems and non-equilibrium thermodynamics, as well as extensive new examples from soft condensed matter and correction of typos from the prior edition Incorporates new numerical and simulation exercises throughout the book Adds more worked examples, problems, and exercises
Download or read book Semiconductor Power Devices written by Josef Lutz and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Download or read book Semiconductor Physics and Devices written by Donald A. Neamen and published by . This book was released on 2003 with total page 746 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text aims to provide the fundamentals necessary to understand semiconductor device characteristics, operations and limitations. Quantum mechanics and quantum theory are explored, and this background helps give students a deeper understanding of the essentials of physics and semiconductors.
Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-06-27 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Download or read book Transient Electro Thermal Modeling on Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Springer Nature. This book was released on 2022-06-01 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Essentials of Semiconductor Device Physics written by Emiliano R. Martins and published by John Wiley & Sons. This book was released on 2022-06-24 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: ESSENTIALS OF SEMICONDUCTOR DEVICE PHYSICS An introductory semiconductor device physics textbook that is accessible to readers without a background in statistical physics I wish this book had been available when I needed to make a Semiconductor class myself a few years ago [...] A very nice aspect is that some concepts (e.g. density of states) are explained in a way that I have not seen elsewhere. These types of unconventional approaches are very valuable for a teacher. (Bjorn Maes, University of Mons, Belgium) [...] the author offers an accessible description of statistical analysis and adopts it to explain the core properties of semiconductors. [...] [He] uses interesting metaphors and analogies to exemplify some of the most difficult notions, in an innovative and engaging way. (Andrea di Falco, University of St. Andrews, UK) The subject of this book is the physics of semiconductor devices, which is an important topic in engineering and physics because it forms the background for electronic and optoelectronic devices, including solar cells. The author aims to provide students and teachers with a concise text that focuses on semiconductor devices and covers the necessary background in statistical physics. This text introduces the key prerequisite knowledge in a simple, clear, and friendly manner. It distills the key concepts of semiconductor devices down to their essentials, enabling students to master this key subject in engineering, physics, and materials. The subject matter treated in this book is directly connected to the physics of p-n junctions and solar cells, which has become a topic of intense interest in the last decade. Sample topics covered within the text include: Chemical potential, Fermi level, Fermi-Dirac distribution, drift current and diffusion current. The physics of semiconductors, band theory and intuitive derivations of the concentration of charge carriers. The p-n junction, with qualitative analysis preceding the mathematical descriptions. A derivation of the current vs voltage relation in p-n junctions (Shockley equation). Important applications of p-n junctions, including solar cells The two main types of transistors: Bipolar Junction Transistors (BJT) and Metal Oxide Semiconductor Field Effect Transistors (MOSFET) For students and instructors, it may be used as a primary textbook for an introductory semiconductor device physics course and is suitable for a course of approximately 30-50 hours. Scientists studying and researching semiconductor devices in general, and solar cells in particular, will also benefit from the clear and intuitive explanations found in this book.
Download or read book Semiconductor Devices written by Amal Banerjee and published by Springer Nature. This book was released on 2023-10-16 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Download or read book The Physics of Submicron Semiconductor Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Download or read book Thermal Management of Gallium Nitride Electronics written by Marko Tadjer and published by Woodhead Publishing. This book was released on 2022-07-13 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. - Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods - Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies - Touches on emerging, real-world applications for thermal management strategies in power electronics
Download or read book Introduction to Solid State Electronics written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is specifically tailored for undergraduate engineering courses offered in the junior year, providing a thorough understanding of solid state electronics without relying on the prerequisites of quantum mechanics. In contrast to most solid state electronics texts currently available, with their generalized treatments of the same topics, this is the first text to focus exclusively and in meaningful detail on introductory material. The original text has already been in use for 10 years. In this new edition, additional problems have been added at the end of most chapters. These problems are meant not only to review the material covered in the chapter, but also to introduce some aspects not covered in the text.An amended Solutions Manual is in preparation.
Download or read book Thermal Reliability of Power Semiconductor Device in the Renewable Energy System written by Xiong Du and published by Springer Nature. This book was released on 2022-07-08 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.
Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2005-12-13 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.
