Download or read book Thermal Expansion and Thermal Expansion Anisotropy of the 3C 4H and 6H Polytypes of Silicon Carbide written by Zhuang Li and published by . This book was released on 1986 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.
Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Expansion 6 written by I. D. Peggs and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: This 6th International Symposium on Thermal Expansion, the first outside the USA, was held on August 29-31, 1977 at the Gull Harbour Resort on Hecla Island, Manitoba, Canada. Symposium Chairman was Ian D. Peggs, Atomic Energy of Canada Limited, and our continuing sponsor was CINDAS/Purdue University. We made considerable efforts to broaden the base this year to include more users of expansion data but with little success. We were successful, however, in establishing a session on liquids, an area which is receiving more attention as a logical extension to the high-speed thermophysical property measurements on materials at temperatures close to their melting points. The Symposium had good international representation but the overall attendance was, disappointingly, relatively low. Neverthe less, this enhanced the informal atmosphere throughout the meeting with a resultant frank exchange of information and ideas which all attendees appreciated. A totally new item this year was the presentation of a bursary to assist an outstanding research student to attend the Symposium. We were delighted to welcome Mr. Benedick Fraass from the Univer sity of Illinois to the Symposium, and he responded by making an informal presentation on the topic of his research. We hope this feature will continue. Previous Symposia in the series were: DATE SPONSOR LOCATION CHAIRMEN September 18-20 Gaithersburg, R.K. Kirby Natl. Bureau of 1968 Maryland Standards P.S. Gaal Westinghouse Astronuclear Lab. June 10-12 Santa Fe, R.O. Simmons Materials Res. Lab.
Download or read book Near Thermal Equilibrium Growth of 4H 6H and 15R silicon Carbide Single Crystals written by Norbert Schulze and published by . This book was released on 2001 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Expansion of Technical Solids at Low Temperatures written by Robert Joseph Corruccini and published by . This book was released on 1961 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Expansion of Crystals written by R.S. Krishnan and published by Elsevier. This book was released on 2013-10-22 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal Expansion of Crystals is a comprehensive examination of the various aspects of thermal expansion of crystals. The book provides both theoretical and experimental aspects of the study of thermal expansion. Chapters are devoted to subjects on measurement methods of thermal expansion; the theory of thermal expansion; behavior of thermal expansion during the occurrence of phase transformations; and thermal expansions in ferroelectric materials. Physicists and researchers, both theoretical and experimental, in the field of thermal expansion of crystals will find this book a valuable piece of reference.
Download or read book Thermal Expansion of Solids written by Cho Yen Ho and published by ASM International. This book was released on 1998-01-01 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides a detailed examination of theory and techniques in thermal expansion of solids. Subjects include a generalized theory, estimation techniques and selected effects, temperature measurements in solids, thermal expansion by X-ray diffraction, high sensitivity expansivity measurement techniques,
Download or read book Thermal Expansion written by Bernard Yates and published by Plenum Publishing Corporation. This book was released on 1972 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Heat Capacity and Thermal Expansion at Low Temperatures written by T.H.K. Barron and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The birth of this monograph is partly due to the persistent efforts of the General Editor, Dr. Klaus Timmerhaus, to persuade the authors that they encapsulate their forty or fifty years of struggle with the thermal properties of materials into a book before they either expired or became totally senile. We recognize his wisdom in wanting a monograph which includes the closely linked properties of heat capacity and thermal expansion, to which we have added a little 'cement' in the form of elastic moduli. There seems to be a dearth of practitioners in these areas, particularly among physics postgraduate students, sometimes temporarily alleviated when a new generation of exciting materials are found, be they heavy fermion compounds, high temperature superconductors, or fullerenes. And yet the needs of the space industry, telecommunications, energy conservation, astronomy, medical imaging, etc. , place demands for more data and understanding of these properties for all classes of materials - metals, polymers, glasses, ceramics, and mixtures thereof. There have been many useful books, including Specific Heats at Low Tempera tures by E. S. Raja Gopal (1966) in this Plenum Cryogenic Monograph Series, but few if any that covered these related topics in one book in a fashion designed to help the cryogenic engineer and cryophysicist. We hope that the introductory chapter will widen the horizons of many without a solid state background but with a general interest in physics and materials.
Download or read book Silicon Carbide and Related Materials 2004 written by Roberta Nipoti and published by . This book was released on 2005 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and industry researchers who are most active in the fields of SiC and related materials. Attendees at the conference highlighted the progress made in material growth technology, characterization of material properties and technological processing for electronic applications. Many electronics devices were presented: including high-voltage, high power-density and high-temperature components; as well as microwave components. Radiation-hard sensors were also presented.These proceedings fully document the latest experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the resultant materials, the development of suitable processes and of electronic devices that can best exploit and benefit from the outstanding physical properties that are offered by wide-bandgap materials.
Download or read book Relation Between Growth Temperature and the Structure of SiC Crystals Grown by the Sublimation Method written by Yoshizō Inomata and published by . This book was released on 1969 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The relationship between growth temperature and the polytypes of SiC crystals has been studied experimentally at 2200 degrees C to 2600 degrees C under conditions of low supersaturation. The results are summarized as follows: (1) In the present experiment, excluding one example in which the 4 H-type was involved, the structure of all crystals consisted of the 6 H-, 15 R- and other long c-period types exceeding 21. Of the elemental structures of SiC, 2 H, 3 C, 4 H, 15 R, 6 H, and 21 R, only 6 H and 15 R were found. (2) In the range of 2200 degrees C - 2600 degrees C, 6 H and 15 R have the most thermal stability among the structures considered as elemental. However, the effect of impurity in the crystal and the shift from stoichiometry were neglected. (3) The relative amount of 15 R increased with decreasing temperature while 6 H showed the opposite tendency.
Download or read book Thermal Expansion 7 written by David C. Larsen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Lattice Dynamics of 3C SiC Under Compression written by Joseph C. Sherbondy and published by . This book was released on 1995 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
