Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 4 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of Sio2 and the Si Sio2 Interface written by B. E. Deal and published by . This book was released on 2014-01-15 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of Sio2 and the Si Sio2 Interface 2 written by B. E. Deal and published by . This book was released on 2014-09-01 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 3 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics of SiO2 and Its Interfaces written by Sokrates T. Pantelides and published by Elsevier. This book was released on 2013-09-17 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 5 written by Hisham Z. Massoud and published by ECS Transactions. This book was released on 2005-01-01 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 2001 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 2001 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."

Download or read book Focus on Nanotechnology Research written by Eugene V. Dirote and published by Nova Publishers. This book was released on 2004 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanotechnology is a 'catch-all' description of activities at the level of atoms and molecules that have applications in the real world. A nanometer is a billionth of a meter, about 1/80,000 of the diameter of a human hair, or 10 times the diameter of a hydrogen atom. Nanotechnology is now used in precision engineering, new materials development as well as in electronics; electromechanical systems as well as mainstream biomedical applications in areas such as gene therapy, drug delivery and novel drug discovery techniques. This book presents the latest research in this frontier field. Contents: Preface; Electrospinning: A Novel Method for Metal Oxide Fibres; Nanofocusing Probe Optimisation in a Near-Field Head for an Ultra-High Density Optical Memory; Molecular Dynamics Simulation of Metallic Nanocluster Interfaces; Pre- and Post-Breakdown Conduction of Thin SiO2 Gate Oxides of MOS Devices: A Conductive Atomic Force Microscope Study; Topographic and Electrical Characterisation of Afm-Grown SiO2 on Si; Solvothermal Route used to Synthesize BN Nanocrystals and the Catalytic Effect of BN Nanocrystals; Covalently Attached Multilayer Self-Assembly Films and Micropatterns Comprising Metal

Download or read book Silicon Nitride Silicon Dioxide Thin Insulating Films and Other Emerging Diele c trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.

Download or read book ULSI Process Integration II written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2001 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Corrosion Mechanisms in Theory and Practice written by Philippe Marcus and published by CRC Press. This book was released on 2011-08-18 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt: Updated to include recent results from intensive worldwide research efforts in materials science, surface science, and corrosion science, Corrosion Mechanisms in Theory and Practice, Third Edition explores the latest advances in corrosion and protection mechanisms. It presents a detailed account of the chemical and electrochemical surface reactions

Download or read book Defects in SiO2 and Related Dielectrics Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.