Download or read book Silicon Carbide and Related Materials 2019 written by Hiroshi Yano and published by Trans Tech Publications Ltd. This book was released on 2020-07-28 with total page 1196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Download or read book Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Download or read book Silicon Carbide and Related Materials Proceedings of the Fifth Conference 1 3 November 1993 Washington DC USA written by Michael G. Spencer and published by CRC Press. This book was released on 1994-06-29 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding
Download or read book 20th International Conference on Silicon Carbide and Related Materials ICSCRM 2023 written by Michele Riccio and published by . This book was released on 2024-09-09 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed extended articles based on abstracts presented at the 20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023) Aggregated Book
Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Silicon Carbide and Related Materials 1995 Proceedings of the Sixth INT Conference Kyoto Japan 18 21 September 1995 written by Shin-ichi Nakashima and published by CRC Press. This book was released on 1996 with total page 1158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject. This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.
Download or read book On the Perspectives of Wide Band Gap Power Devices in Electronic Based Power Conversion for Renewable Systems written by Samuel Vasconcelos Araújo and published by kassel university press GmbH. This book was released on 2013-06-13 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Future Energy Conferences and Symposia written by and published by . This book was released on 1991 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Naval Research Reviews written by and published by . This book was released on 1999 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride and Related Wide Bandgap Materials and Devices written by R. Szweda and published by Elsevier. This book was released on 2000-07-07 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Download or read book Processing of Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Download or read book Modern Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2023-09-18 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Download or read book Review written by and published by . This book was released on 1989 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Review Naval Research Laboratory Washington D C written by United States. Office of Naval Research and published by . This book was released on 1989 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Optical Spectroscopy Techniques for Semiconductors written by Masanobu Yoshikawa and published by Springer Nature. This book was released on 2023-03-23 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on advanced optical spectroscopy techniques for the characterization of cutting-edge semiconductor materials. It covers a wide range of techniques such as Raman, infrared, photoluminescence, and cathodoluminescence (CL) spectroscopy, including an introduction to their physical fundamentals and best operating principles. Aimed at professionals working in the research and development of semiconductors and semiconductor materials, this book looks at a broad class of materials such as silicon and silicon dioxide, nano-diamond thin films, quantum dots, and gallium oxide. In addition to the spectroscopic techniques covered, this book features a chapter devoted to the use of a scanning electron transmission microscope as an excitation source for CL spectroscopy. Written by a practicing industry expert in the field, this book is an ideal source of reference and best-practices guide for physicists, as well as materials scientists and engineers involved in the area of spectroscopy of semiconductor materials. Further, this book introduces the cutting-edge spectroscopy such as optical photothermal IR and Raman spectroscopy or terahertz time-domain spectroscopy (THz-TDS) etc.