Download or read book The Fabrication and Characterization of MOSFETs with Titanium Dioxide and Hafnium Dioxide as Gate Dielectrics written by Tiezhong Ma and published by . This book was released on 2001 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hafnium Oxide Gate Dielectrics for Deeply Scaled MOSFETs written by Zhihong Zhang and published by . This book was released on 2005 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development and Characterization of Ultrathin Hafnium Titanates as High Permittivity Gate Insulators written by Min Li and published by . This book was released on 2005 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in SiO2 and Related Dielectrics Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Download or read book Fabrication Characterization and Modeling of TiO2 Si3N4 Gate Stacks for Deeply Scaled MOSFETs written by Boyong He and published by . This book was released on 2000 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book HfO2 Based Gate Dielectrics for Nanoscale MOSFETs written by Fang Chen and published by . This book was released on 2004 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nitride Silicon Dioxide Thin Insulating Films and Other Emerging Diele c trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2001 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hf based High k Dielectrics written by Young-Hee Kim and published by Morgan & Claypool Publishers. This book was released on 2005 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1970 with total page 1338 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Carrier mobility in advanced channel materials using alternative gate dielectrics written by Eylem Durgun Özben and published by Forschungszentrum Jülich. This book was released on 2014-03-20 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Download or read book Polymer Nanocomposite Materials written by Ye Zhou and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymer Nanocomposite Materials Discover an authoritative overview of zero-, one-, and two-dimensional polymer nanomaterials Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices delivers an original and insightful treatment of polymer nanocomposite applications in energy, information, and biotechnology. The book systematically reviews the preparation and characterization of polymer nanocomposites from zero-, one-, and two-dimensional nanomaterials. The two distinguished editors have selected resources that thoroughly explore the applications of polymer nanocomposites in energy, information, and biotechnology devices like sensors, solar cells, data storage devices, and artificial synapses. Academic researchers and professional developers alike will enjoy one of the first books on the subject of this environmentally friendly and versatile new technology. Polymer Nanocomposite Materials discusses challenges associated with the devices and materials, possible strategies for future directions of the technology, and the possible commercial applications of electronic devices built on these materials. Readers will also benefit from the inclusion of: A thorough introduction to the fabrication of conductive polymer composites and their applications in sensors An exploration of biodegradable polymer nanocomposites for electronics and polymer nanocomposites for photodetectors Practical discussions of polymer nanocomposites for pressure sensors and the application of polymer nanocomposites in energy storage devices An examination of functional polymer nanocomposites for triboelectric nanogenerators and resistive switching memory Perfect for materials scientists and polymer chemists, Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices will also earn a place in the libraries of sensor developers, electrical engineers, and other professionals working in the sensor industry seeking an authoritative one-stop reference for nanocomposite applications.

Download or read book Modern Semiconductor Devices for Integrated Circuits written by Chenming Hu and published by Prentice Hall. This book was released on 2010 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "

Download or read book High k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.