Download or read book The Fabrication and Characterisation of 4H SiC Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Fabrication and Characterisation of 4H silicon Carbide Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of A1 4H SiC Schottky Diodes written by Jingyan Zhang and published by . This book was released on 2002 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 4h Sic Schottky Barrier Diodes and Junction Field Effect Transistors written by Denis Perrone and published by LAP Lambert Academic Publishing. This book was released on 2010-07 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Design and Fabrication of High Voltage 4H SiC Schottky Barrier Diodes written by Luo, Xixi and published by . This book was released on 2019 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel design of mesa-etch termination and Superjunction JBS diode structure has been proposed and optimized. The new mesa-etch termination can achieve over 90% of ideal maximal breakdown voltage within a wide sidewall implant dose window (~9e16 cm−3). Besides the high tolerance on implant dose, the proposed design also exhibits high tolerance on the etch sidewall angle: minimal maximum breakdown voltage was observed with etch sidewall angle variations. The Superjunction JBS diode can obtain both 96.4% maximum super junction breakdown voltage and 76.6% JBS Schottky surface electric field reduction. The super junction maximal breakdown voltage is 1.5 times large as the conventional Schottky diode breakdown voltage and the leakage current is logarithmically related to the surface electric field. The superior breakdown voltage represents a large improvement on the power rectifier performance. Based on these structure improvements, vertical 4H-SiC Schottky Diodes have been fabricated and tested. Vertical 4H-SiC Schottky Diode without any edge termination has a breakdown voltage as large as 692 V and exhibits an on-state specific resistance as small as 7.9 mΩ*cm2. Such breakdown voltage is much higher than simulation results. In the meantime, on-state resistance is also much larger than the simulation results. The mechanism for these improved power rectifier performances will be furthered investigated in future studies
Download or read book Fabrication and Characterization of Schottky barrier Diodes for Mixer Applications written by James A. Griffin and published by . This book was released on 1979 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Process induced Defects in 4H SiC written by Shandirai Malven Tunhuma and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide has become an important material in the implementation of next generation photonics. It harbors the silicon vacancy (VSi) which can be transformed to a carbon antisite-vacancy pair (CSiVC) defect through thermal treatment. This defect has quantum functionality and can be used as a single photon source at room temperature. Using defect engineering, this technology is set to surpass advances made in other similar systems because it is being developed on existing standard industrial practices, fabrication protocols and mechanisms. These include techniques such as irradiation, annealing and ion implantation. The motivation of this work was to establish sound device fabrication protocols to be used in the device implementation. In this thesis DLTS and Laplace DLTS have been used to characterize deep level defects induced by various processes in 4H-SiC. Schottky barrier diodes were used to create the space charge region required to probe the defect characteristics using capacitance DLTS. From the DLTS and Laplace DLTS the activation energies of the defects were accurately deduced and the apparent capture cross section was calculated. The defect concentration was also quanti ed in the form of depth pro les plotted from the metal-semiconductor interface of the Schottky barrier diodes into the bandgap of the semiconductor. SEM, AFM and XRD were used to probe the changes in surface morphology and composition accompanying the processing steps whilst Raman spectroscopy was used to probe the nature of induced defects. Sputter deposition of tungsten on 4H-SiC was successfully used to induce the E0:69 which is the VSi. The identity of VSi was con rmed by thermal treatment and it annealed beyond detection at 600 C as expected. A previously unreported defect, the E0:29 was also observed after sputtering and was attributed to the heavy metal and gas ion residue from the deposition process. In order to transform the VSi into CSiVC, W/4H-SiC diodes were annealed up to 1100 C. This resulted in the formation of defects which were attributed to the interdi usion of silicides and carbides formed at the W/4H-SiC interface, as detected by XRD, migrating into the SiC. This was an unfavourable outcome for photonics applications where purity of the semiconductor is a major concern. As an alternative solution, the VSi was induced in 4H-SiC using 167 MeV, Xe26+ swift heavy ions. Xe is a noble gas therefore it would not react with the semiconductor. The structure and integrity of the lattice structure was conserved after irradiation as deduced from confocal Raman microscopy. The depth and concentration of the defects as observed in confocal Raman was consistent with SRIM simulations. AFM showed that the radiation introduced elongated protrusions on the surface of the semiconductor. The observations show that the silicon vacancy can be induced in 4H-SiC by standard industrial practices such as sputter deposition or ion irradiation.
Download or read book Design Fabrication and Characterization of High Voltage 10 KV 4H SiC MPS Diodes written by Yifan Jiang and published by . This book was released on 2019 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Download or read book Fabrication and Characterization of Schottky barrier Mixer Diodes written by Herman A. Belcher and published by . This book was released on 1981 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Download or read book Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Download or read book Fabrication and Analysis of 4H SiC Diodes written by Yeganeh Bonyadi and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Shi ti ming bian written by and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Process and Radiation induced Defects in 4H SiC written by Ezekiel Omotoso and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices for operation in aerospace, manufacturing industries, defence and radiation-harsh environments need to be manufactured from materials that are resistant to the frequent damage caused by irradiation and high-temperature environments. Silicon carbide (SiC) is a wide-bandgap semiconductor material that promises to provide solutions to these problems based on its capability to operate under extreme conditions of temperature and radiation. These conditions introduce defects in the materials. Such defects play an important role in determining the properties of devices, albeit beneficial or detrimental. Therefore it is very important to characterize the defects present in as-grown material as well as defects introduced during processing and irradiation. In this research, resistive evaporation (RE) as well as electron-beam deposition was employed for the fabrication of ohmic and Schottky barrier contacts on nitrogen-doped, n-type 4H-SiC substrate. The quality of the Schottky barrier diodes (SBDs) deposited was confirmed by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS were successfully used to characterize the electrically active defects present in the 4H-SiC SBDs before and after bombarding them with high-energy electrons and alpha-particles as well as after exposing the sample to electron beam deposition conditions. I-V and C-V measurements showed that the SBDs deposited by RE were of good quality with an ideality factor close to unity, a low series resistance and low reverse leakage current. After irradiation, the electrical properties deviated significantly based on the irradiation types and fluences. Thermionic emission dominated at high temperatures close to room temperature, while other current transport mechanisms became dominant at lower temperatures. The ideality factor increased and Schottky barrier heights decreased with decreasing temperature.
Download or read book Fabrication and Electrical Characterization of PiSi i e PtSi Schottky Barrier Diode written by Sultan Ul-Alam Chowdhury and published by . This book was released on 1993 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
