Download or read book The Electrical Properties of Vanadium Oxide Films written by Wing Andy Li and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "The Electrical Properties of Vanadium Oxide Films" by Wing, Andy, Li, 李榮, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3120506 Subjects: Sputtering (Physics) Vanadium oxide Amorphous substances

Download or read book The Electrical Properties of Vanadium Oxide Films written by Wing Li (Andy) and published by . This book was released on 1978 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Reactive Magnetron Sputtered Vanadium Oxide Thin Films written by Vu Huynh Lam and published by . This book was released on 2006 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: To further reduce the resistivity of the VO[subscript x] and maintain the TCR value, co-sputtering of noble metals (gold and platinum) with VO[subscript x] was studied. The metals were co-sputtered at various power settings with the vanadium oxide reactive process at a fixed percentage of oxygen. The TCR and resistivity results showed that the additions of Au and Pt into VO[subscript x] reduced the resistivity. However, only Au was found to improve TCR value.

Download or read book Dependence of Negative Substrate Bias on the Optical and Electrical Properties of W Doped Vanadium Dioxide Thin Films written by and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GROWTH AND FUNCTIONALITIES OF VANADATE THIN FILMS written by Haitian Zhang and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transition metal oxides have attracted tremendous research interest due to their fertile functional properties, including ferroelectricity, magnetism, high temperature superconductivity and metal to insulator transition (MIT). Over recent decades, one of the research focuses has been utilizing these functional features in device applications, which requires a deeper understanding of the material science and also advances in thin film deposition in order to tailor these properties. The binary vanadium dioxide has drawn much attention due to its orders of magnitude change in resistivity during the MIT near room temperature, opening up the possibilities to use this material as next generation transistors, memory devices and radio frequency switches in communication applications. However, to bridge the gap between the frontier of fundamental research in VO2 films and their realization in commercial products, wafer scale growth of the oxide thin films with electronic grade is necessary. This task requires precise control over the valence state of normally multivalent transition metal cations, while the device performance will be largely derogated if the valence state is not well controlled. To deposit the VO2 with precise valence state control on wafer scale, a combinatorial approach was used to establish a valence state gradient of vanadium cation, from which the optimal condition for stoichiometric VO2 was extracted. Under the optimal growth condition, a high quality 30-nm thick VO2 film was grown on 3 inch sapphire wafer, showing the highest MIT resistivity ratio for ultrathin films on wafer scale, which is relevant for modern device applications.Besides the growth of high quality MIT thin films on wafer scale, a novel strategy to optically write and erase complex circuitry into VO2 thin films was also developed. Weve successfully demonstrated the optically induced MIT in VO2 which is persistent after the light source is turned off. We use this method to optically imprint local conductive areas into an otherwise insulating VO2 film. In contrast to conventional thin film patterning techniques that require chemical etching of patterns defined through lithography steps, the optical imprint is performed by irradiating single crystalline VO2 thin films with focused ultraviolet light in a nitrogen atmosphere. A conductive pattern is sketched into the resistive VO2 matrix, resulting in a close to 4 orders of magnitude increase in electrical conductivity at room temperature. Significantly, the inscribed pattern, which is permanent, can be completely erased by a few minutes thermal annealing process at moderately elevated temperature. This development can potentially find its application in reconfigurable optical elements. It can also be harnessed as rewritable bottom electrode material for back-gating structures by inscribing complex contacting schemes using UV radiation. Beyond the binary vanadium oxides, Mott insulators such as LaVO3 have recently been suggested as promising solar cell materials with suitable band gap, high absorption coefficient, as well as the potential to beat the Shockley-Queisser limit owing to their unique strong electron-electron correlation effect that is not present in conventional semiconductors. However, the quality of strongly correlated oxides has been far inferior compared to conventional semiconductors. The high defect concentration of oxide thin films impedes the realization of Mott solar cells with competitive performance due to the lack of stoichiometry control. By taking advantage of the unique self-regulated growth mechanism available in hybrid molecular beam epitaxy, strongly correlated LaVO3 films were grown which revealed a record-low defect concentration. The optical and electrical properties of these films were studied as a function of stoichiometry and a more than two orders of magnitude improvement in defect-related properties compared to results reported in literature was demonstrated, showing that Mott insulators can indeed be synthesized with high perfection using hybrid molecular beam epitaxy.

Download or read book Optical and Electronic Properties of Fluorine doped Vanadium Oxide Thin Films written by Romesh M. Jessani and published by . This book was released on 1991 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of the Electrical Properties of Thin Oxide Films by the Gaseous Discharge Plasma Method written by S. S. Gutin and published by . This book was released on 195? with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Synthesis and Properties of Vanadium Oxide Aerogel Films written by and published by . This book was released on 1996 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fine colloid size, high surface area and controllable density of vanadium oxide aerogels make these materials interesting candidates for lithium insertion electrodes. Thin films of vanadium oxide aerogels were prepared using an alkoxide precursor sol and supercritical drying with CO2. Film preparation methods included spin coating of fine aerogel particles suspended in a solvent and dip coating of the precursor sol onto carbon paper substrates. The room temperature electrical conductivity of partially dehydrated materials (V2O5 0.5 H2O) varies from 10(exp -5) S/cm to 10(exp -4) S/cm depending upon the density of the final aerogel. Potential sweep measurements indicate that the films possess good insertion capacity (approx. 2 Li a per V2O5) and can be cycled reversibly. p1.

Download or read book The Influence of Vanadium Doping on the Physical and Electrical Properties of Non Volatile Random Access Memory Using the BTV BLTV and BNTV Oxide Thin Films written by Kai-Huang Chen and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films.

Download or read book Electronic Thermoelectric and Optical Properties of Vanadium Oxides written by Chiranjivi Lamsal and published by . This book was released on 2015 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Correlated electrons in vanadium oxides are responsible for their extreme sensitivity to external stimuli such as pressure, temperature or doping. As a result, several vanadium oxides undergo insulator-to-metal phase transition (IMT) accompanied by structural change. Unlike vanadium pentoxide (V3O3), vanadium dioxide (VO3) and vanadium sesquioxide (V3O3) show I MT in their bulk phases. In this study, we have performed one electron Kohn-Sham electronic band-structure calculations of VO3, V3O3 and V2O5 in both metallic and insulating phases, implementing a full ab-initio simulation package based on Density Functional Theory (DFT), Plane Waves and Pseudopotentials (PPs). Electronic band structures are found to be influenced by crystal structure, crystal field splitting and strong hybridization between O2p and V3d bands. "Intermediate bands", with narrow band widths, lying just below the higher conduction bands, are observed in V2O5 which play a critical role in optical and thermoelectric processes. Similar calculations are performed for both metallic and insulating phases of bulk VO2 and V2O3. Unlike in the metallic phase, bands corresponding to "valence electrons" considered in the PPs are found to be fully occupied in the insulating phases. Transport parameters such as Seebeck coefficient, electrical conductivity and thermal (electronic) conductivity are studied as a function of temperature at a fixed value of chemical potential close to the Fermi energy using Kohn-Sham band structure approach coupled with Boltzmann transport equations. Because of the layered structure and stability, only V2O5 shows significant thermoelectric properties. All the transport parameters have correctly depicted the highly anisotropic electrical conduction in V2O5. Maxima and crossovers are also seen in the temperature dependent variation of Seebeck coefficient in V2O5, which can be consequences of "specific details" of the band structure and anisotropic electron-phonon interactions. For understanding the influence of phase transition on transport properties, we have also studied transport parameters of VO2 for both metallic and insulating phases. The Seebeck coefficient, at experimental critical temperature of 340K, is found to change by 18.9 μV/K during IMT, which lies within 10% of the observed discontinuity of 17.3 μV/K. Numerical methods have been used to analyze the optical properties of bulk and thin films of VO2, V2O3, and V2O5, deposited on Al2O3 substrates, from infrared to vacuum ultraviolet range (up to 12 eV). The energies corresponding to the peaks in the reflectivity-energy (R-E) spectra are explained in terms of the Penn gap and the degree of anisotropy is found to be in the order of V2O3

Download or read book Electrical Properties of Glasses Glass ceramics and Amorphous Solids written by International Commission on Glass. Sub-committee AIX. and published by . This book was released on 1977 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Groups IV V and VI Transition Metals and Compounds written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: responsibility.) To Betty Edwards and Emily Copenhaver my thanks for what must have seemed endless typing, retyping and correcting of these bibliographies over a span of years. Availability of Documents U. S. Government contractor reports, usually identified by an alpha-numeric report number, can be purchased from National Technical Information Service U. S. Department of Commerce Springfield, Virginia 22151 and, often, on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa England Monographs and reports of the National Bureau of Standards are for sale by Superintendent of Documents U. S. Government Printing Office Washington, D. C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North or South America from University Microfilms Dissertation Copies P. O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Other Information Centers and New Journals New journals Information centers Field and and other sources serials Ultra purification 4, 8, 11, 13, 15, 16,19, 20, 9,11,15, 24, 31, 32 and 21, 28, 30, 32, 33, 42, 58, 59 crystal growth ix Preface Field Information centers New journals and and other -sources serials Characterization Miscellaneous 3,4, 8, 11, 13, 16, 19, 20, 1,3,4,8,11,15,17, 21, 26, 28, 30, 31, 32, 33, 35, 24, 25, 28, 29, 30, 31, 37, 38, 39, 40, 42, 46, 53, 56, 32 58, 60, 61, 62

Download or read book Vanadium Pentoxide Thin Film and Its Characterization written by Bhanu Priya and published by Mohammed Abdul Sattar. This book was released on 2024-01-29 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconducting materials have been around since the early 19th century, when Michael Faraday discovered that, unlike pure metals, the electrical resistance in silver sulphide decreased as the temperature of the material was raised. From a more practical perspective, a semiconductor is a substance with electrical conductivity between that of an insulator and a metal, as the name suggests. There is a plethora of non- conducting features of semiconductors that have led to their uses in a wide variety of applications. After the development of the transistor device, silicon (Si) has become the most well-known semiconductor in the world. Without a doubt, the advent of the transistor in the 20th century was the single most important scientific event of the last two centuries, paving the way for the rapid development of technology in our modern world. In the last few decades, Transition Metal Oxide Semiconductors (TMOS) are a class of materials that have attracted significant attention in the field of electronics and optoelectronics due to their unique properties. These materials are composed of transition metal cations and oxygen anions, and can exhibit a wide range of electronic and optical behaviors, including band gap tuning, carrier density modulation, and photoresponse enhancement. TMOS are especially promising for applications such as solar cells, gas sensors, and electronic devices, due to their high carrier mobility, chemical stability, and abundance of raw materials. The diverse range of properties exhibited by TMOS makes them a promising avenue for developing new and advanced technologies in the field of materials science.

Download or read book Advances in Ferroelectrics written by Aimé Peláiz-Barranco and published by BoD – Books on Demand. This book was released on 2012-11-19 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity is one of the most studied phenomena in the scientific community due the importance of ferroelectric materials in a wide range of applications including high dielectric constant capacitors, pyroelectric devices, transducers for medical diagnostic, piezoelectric sonars, electrooptic light valves, electromechanical transducers and ferroelectric random access memories. Actually the ferroelectricity at nanoscale receives a great attention to the development of new technologies. The demand for ferroelectric systems with specific applications enforced the in-depth research in addition to the improvement of processing and characterization techniques. This book contains twenty two chapters and offers an up-to-date view of recent research into ferroelectricity. The chapters cover various formulations, their forms (bulk, thin films, ferroelectric liquid crystals), fabrication, properties, theoretical topics and ferroelectricity at nanoscale.

Download or read book Mechanical Properties and Resistivity of Gold and Gold vanadium Oxide Thin Films written by Kittisun Mongkolsuttirat and published by ProQuest. This book was released on 2009 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pure Au films deposited at room temperature have an electrical resistivity that is higher than the published value for bulk gold. Increasing the substrate temperature during deposition was shown to strongly affect the grain size of the Au thin films. Whereas the elastic modulus is unaffected by the grain size, resistivity and hardness decrease at high temperature. An electrical resistivity model based on a combination of the Fuchs-Sondheimer and Mayadas-Shatzkes models for electron scattering fit the data well. The hardness dependence on grain size was explained using the Hall-Petch equation. Together, these results demonstrate that it is possible to reduce the resistivity by depositing at high temperature, but some loss of hardness is likely.

Download or read book Handbook of Microlithography Micromachining and Microfabrication Micromachining and microfabrication written by P. Rai-Choudhury and published by SPIE Press. This book was released on 1997 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: Focusing on the use of microlithography techniques in microelectronics manufacturing, this volume is one of a series addressing a rapidly growing field affecting the integrated circuit industry. New applications in such areas as sensors, actuators and biomedical devices, are described.

Download or read book Advances in Ferroelectrics written by Aimé Peláiz-Barranco and published by IntechOpen. This book was released on 2012-11-19 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity is one of the most studied phenomena in the scientific community due the importance of ferroelectric materials in a wide range of applications including high dielectric constant capacitors, pyroelectric devices, transducers for medical diagnostic, piezoelectric sonars, electrooptic light valves, electromechanical transducers and ferroelectric random access memories. Actually the ferroelectricity at nanoscale receives a great attention to the development of new technologies. The demand for ferroelectric systems with specific applications enforced the in-depth research in addition to the improvement of processing and characterization techniques. This book contains twenty two chapters and offers an up-to-date view of recent research into ferroelectricity. The chapters cover various formulations, their forms (bulk, thin films, ferroelectric liquid crystals), fabrication, properties, theoretical topics and ferroelectricity at nanoscale.