Download or read book The Electrical Characterisation of Si and Si Si subscript 1 x Ge subscript X Si Structures Grown by Molecular Beam Epitaxy written by James Cordeaux Brighten and published by . This book was released on 1993 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Electrical Characterisation of Si and Si Si b1 s XGeX Si Structures Grown by Molecular Beam Epitaxy written by James Cordeaux Brighten and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Electrical Characterisation of Si and Si Si1 XGe X Si Structures Grown by Molecular Beam Epitaxy written by J.C Brighten and published by . This book was released on 1993 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Si Ge Structures Grown by Molecular Beam Epitaxy written by Robert Michael Ostrom and published by . This book was released on 1989 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Si Si1 xGe x Si Inverted Modulation Doped Structures written by M. A. Sadeghzadeh and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of MBE Grown Si Ge subscript X Si subscript 1 x Heterostructures by Photoemission Spectroscopy written by Reza Arghavani and published by . This book was released on 1991 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Reports Awareness Circular TRAC written by and published by . This book was released on 1989-08 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization and reduction of defects in epitaxial Si and Si subscript 1 x Ge subscript x Si films grown by remote plasma enhanced chemical vapor deposition written by David Stephen Kinosky and published by . This book was released on 1993 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low temperature in situ clean and Si and Si subscript 1 x and Ge subscript x epitaxy by remote plasma enhanced chemical vapor deposition written by Ting-Chen Hsu and published by . This book was released on 1992 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of Si and Si 1 x Ge x Thin Films Using Gas Source Molecular Beam Epitaxy written by and published by . This book was released on 1993 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterisation of Terrace Graded Virtual Substrates with Si subscript 1 x Ge subscript X 0 15 X 1 written by Lee John Nash and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth of terrace graded virtual substrates, pioneered by Capewell (2002), has been conducted utilising solid-source molecular beam epitaxy (SS-MBE) to produce structures of higher germanium composition (up to pure germanium) and greater thickness (up to 20?m) than previously investigated. Terrace grading offers a number of advantages over more conventional grading techniques which include the reduction of surface threading dislocation density, reduction of surface roughness and the possibility of the complete elimination of threading dislocation pile-up. The closely spaced pile-up of threading dislocations is believed to have a significant impact on the electrical properties of processed devices, and its elimination is a key goal in this work. Numerous terrace graded virtual substrate compositions have been grown and characterised during the course of this work and, where appropriate, comparison made with more conventional structures. The complete elimination of threading dislocation pile-up has been demonstrated at compositions of 30% and 40%, with a reduced threading dislocation density in comparison to equivalent liner graded structures. A major reduction in threading dislocation density has been accomplished though post growth ex-situ annealing at 900?c for an extend period of time, though the exact mechanism remains uncertain. The possible role of surface precipitates enabling reduction of dislocation pile-up and/or density is considered along with the effects of unwanted particulate contamination during growth.

Download or read book Growth Techniques and Characterisation of Si1 xGe x Heterostructures for PMOS Applications written by T. J. Grasby and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Transport Properties of Two dimensional Hole Gases in the Si Si subscript 1 x Ge subscript X System written by Charles John Emeleus and published by . This book was released on 2020 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth and Characterization of Si 1 x Ge x Materials and Devices written by Pallab Bhattacharya and published by . This book was released on 1997 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.

Download or read book Ge subscript x Si subscript 1 x epitaxial layers grown by rapid thermal processing chemical vapor deposition written by Kim Hsi-I Jung and published by . This book was released on 1989 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.

Download or read book In Situ TEM Studies of the Growth of Strained Si Sub 1 Minus X Ge Sub X by Solid Phase Epitaxy written by and published by . This book was released on 1990 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper we report on the epitaxial growth of strained thin films Si{sub 1-x}Ge(subscript x) on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si{sub 1-x}Ge(subscript x) with x{sub Ge} = 11.6 at. % was epitaxially grown on {l angle}001{r angle} Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si{sub 1-x}Ge(subscript x) film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy Si{sub 1-x}Ge(subscript x) (x = 11.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C. 8 refs., 3 figs., 1 tab.