Download or read book The Effects of Rapid Recrystallization and Ion Implanted Carbon on the Solid Phase Epitaxial Regrowth of Sisub 1 xGesub X Alloy Layers on Silicon written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Rapid Recrystallization and Ion Implanted Carbon on the Solid Phase Epitaxial Regrowth of Si sub 1 x Ge subscript X Alloy Layers on Silicon written by and published by . This book was released on 1995 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Si{sub 0.88}Ge{sub 0.12}/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500--700C) has three main effects on SPER: these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphouse-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front. Recrystallization of amorphized SiGe layers at higher temperatures (1100C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures treading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the treading dislocation density is slightly higher with carbon implantation.
Download or read book Effects of High temperature Rapid Recrystallization and Ion Implanted Carbon on Epitaxial Regrowth of Amorphous Si1 xGex Alloy Films on Silicon written by Michael J. Antonell and published by . This book was released on 1994 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Formation and Thermal Stability of Si Ge C Alloys Made by Ion Implantation and Solid Phase Epitaxy written by Jay W. Strane and published by . This book was released on 1994 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Formation of Buried Epitaxial Si Ge Alloy Layers in Si 100 crystal by High Dose Ge Ion Implantation written by and published by . This book was released on 1991 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have synthesized single crystal Si{sub 1-x}Ge(subscript x) alloy layers in Si 100 crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 1000 keV and with doses ranging from 1 x 1016 to 7 x 1016 ions/cm2 were implanted into Si 100 crystals at room temperature, resulting in the formation of Si{sub 1-x}Ge(subscript x) alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers were initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si{sub 1-x}Ge(subscript x) layers with full width at half maximum (approximately)100nm were formed under a (approximately)30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.
Download or read book Low Temperature Solid Phase Epitaxial Regrowth of Ion Implanted Boron in Silicon written by Chad Darrell Lindfors and published by . This book was released on 2003 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of the Solid Phase Epitaxial SPE Regrowth of Si Si1 xGex Si Strained layer Structures Amorphized by Ion Implantation written by Bradley T. Chilton and published by . This book was released on 1991 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
