Download or read book The Characterization of Liquid Phase Epitaxial Indium Gallium Arsenide Phosphide and Indium Gallium Arsenide written by Mark Masato Tashima and published by . This book was released on 1981 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxial Growth and Characterization of High Purity Gallium indium arsenide phosphide Semiconductor Alloys Lattice Matched to Indium Phosphide Substrates written by James D. Oliver and published by . This book was released on 1980 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxial Growth and Characterization of Indium Gallium Arsenide Phosphide indium Phosphide Double Heterojunction Lasers written by Edward Anthony Rezek and published by . This book was released on 1977 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxial Growth and Heterointerface Characteristics of Long wavelength Indium Gallium Arsenide Phosphide Heterostructures written by Paul Edward Brunemeier and published by . This book was released on 1985 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxial Growth and Luminescence Characteristics of Indium Gallium Phosphide Arsenide Indium Phosphide Quantum Well Heterostructures written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth and Characterization of Indium Phosphide and Gallium Indium Arsenide by Metalorganic Chemical Vapor Deposition written by Kam Tai Chan and published by . This book was released on 1986 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxial Growth of Constant Composition Indium Gallium Arsenide Phosphide Layers written by Louis Walter Cook and published by . This book was released on 1981 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book LIQUID PHASE EPITAXIAL GROWTH AND PROPERTIES OF INDIUM GALLIUM PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE ARSENIDE INJECTION LASERS written by and published by . This book was released on 1975 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Gallium Arsenide and Indium Gallium Arsenide on Gallium Arsenide 001 Films Grown by Metalorganic Vapor phase Epitaxy written by Byung-kwon Han and published by . This book was released on 1997 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Liquid Phase Epitaxial Growth and Luminescence Charactersitics of Indium Gallium Phosphide Arsenide indium Phosphide Quantum well Heterostructures written by Edward Anthony Rezek and published by . This book was released on 1980 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Indium Gallium Phosphide on Gallium Arsenide by Gas Source Molecular Beam Epitaxy System and Its Applications to Heterostructures written by Dhrubes Biswas and published by . This book was released on 1993 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown. Samples studied were grown on (100) GaAs substrates under various growth conditions. Reproducible growth conditions have been established with respect to optimisation of pressure and temperature so as to achieve good material properties. Structural characterization using X ray has been carried out for the determination of material composition and evaluation of crystal quality. Very narrow full width at half maxima values indicated good crystal quality. Additionally, cross-sectional TEM has shown smooth heterointerface. Subsequent to this, good hall mobility at room temperature and at 77K, confirmed the material quality. Photoluminescence has been utilized for the evaluation of the E$\sb0$ gap. The PL exhibited very narrow full width at half maxima for lattice matched composition. Apart from evaluation of the E$\sb1$ gap, spectroscopic ellipsometry has been used to investigate the compositional dependence of the E$\sb1$ gap (and its broadening). P-type modulation doped heterostructures has been implemented using InGaP/GaAs, demonstrating two dimensional hole gas (2DHG) with good p-type hole mobilities measured from room temperature up to very low temperatures. The approximate constant value of mobility in the low temperature region strongly confirms the presence of 2DHG. A simple model has been formulated for the estimation of valence band discontinuity from the measured 2DHG data at cryogenic temperatures. Heterostructure Bipolar Transistor has been demonstrated using InGaP/GaAs system with the realisation of good current gain and low offset voltages. The double heterostructure bipolar transistor showed even smaller offset voltages. The classical V$\sb{CE}$ versus I$\sb{c}$ plots and gummel plots for the devices shows an ideality factor close to unity for I$\sb{c}$ and other usual characteristic features.
Download or read book Molecular beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide indium Gallium Arsenide Single Quantum well Modulation doped Field effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1990 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates written by David Ian Westwood and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Gallium Arsenide Layers Using Liquid Phase Epitaxy written by William R. Nance and published by . This book was released on 1978 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of Gallium Arsenide Grown by Conventional and Current controlled Liquid Phase Epitaxy written by Ronald Paul Gale and published by . This book was released on 1978 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterisation of Liquid Phase Epitaxial Gallium Arsenide written by D. Alexiev and published by . This book was released on 1990 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
