Download or read book Texture and Microstructure in Copper Damascene Interconnects written by Jae-Young Cho and published by . This book was released on 2004 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A new interpretation of textural and microstructural evolution in Cu damascene interconnects lines after annealing and possible factors responsible for the texture transformation are suggested, and the optimum processing conditions are recommended." --
Download or read book Effect of Downscaling Copper Interconnects on the Microstructure Revealed by High Resolution Tem Orientation Mapping written by Jai Ganesh Kameswaran and published by . This book was released on 2011 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: The scaling required to accommodate faster chip performance in microelectronic devices has necessitated a reduction in the dimensions of copper interconnects at the back end of the line. The constant downscaling of copper interconnects has resulted in changes to the microstructure, and these variations are known to impact electrical resistivity and reliability issues in interconnects. In this work, a novel electron diffraction technique called Diffraction Scanning Transmission Electron Microscopy (D-STEM) has been developed and coupled with precession electron microscopy to obtain quantitative local texture information in damascene copper lines (1.8 \mu m to 70 nm in width) with a spatial resolution of less than 5 nm. Misorientation and trace analysis has been performed to investigate the the grain boundary distribution in these lines. The results reveal strong variations in texture and grain boundary distribution of the copper lines upon downscaling. 1.8 \mu m wide lines exhibit strong 111 normal texture and comprise large bamboo-type grains. Upon downscaling to 180 nm, a {111} 110 biaxial texture has been observed. In contrast, narrower lines of widths 120 nm and 70 nm reveal sidewall growth of {111} grains and a dominant 110 normal texture. The fraction of coherent twin boundaries also reduces with decreasing line width. The microstructure changes from bamboo-type in wider lines to one comprising clusters of small grains separated by high angle boundaries in the vicinity of large grains. The evolution of such a microstructure has been discussed in terms of overall energy minimization and dimensional constraints. Finite element analysis has been performed to correlate misorientations between grains and local thermal stresses associated with stress migration. Effect of variations in the copper interconnect microstructure on electromigration flux divergence has also been discussed.
Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Download or read book Copper Interconnect Technology written by Christoph Steinbruchel and published by SPIE Press. This book was released on 2001 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: A textbook designed to accompany The Society of Photo-Optical Instrumentation Engineers' short course on improving interconnect performance for increased speed in overall circuit performance authored by Steinbrnchel (materials science and engineering, Renselaer Polytechnic Institute) and Chin (senio
Download or read book Stress Texture and Electromigration in Damascene Copper Interconnects written by Kabir Mirpuri and published by . This book was released on 2005 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The EBSD and XRD studies helped to identify the mechanisms which govern the texture and microstructure evolution in Cu interconnect lines during annealing performed before and after CMP. The role of surface/interface and strain energy on formation of energy minimizing textures was established. The mechanism of texture evolution was explained explicitly as function of principal and shear stress, dislocation density, trench aspect ratio and top passivation layer." --
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Download or read book Analytical Characterization of Aluminum Steel and Superalloys written by D. Scott MacKenzie and published by CRC Press. This book was released on 2005-10-10 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: This one-of-a-kind reference examines conventional and advanced methodologies for the quantitative evaluation of properties and characterization of microstructures in metals. It presents methods for uncovering valuable information including precipitate mechanisms, kinetics, stability, crystallographic orientation, the effects of thermo-mechanical p
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microstructure and Texture of Electroplated Copper Films and Damascene Lines written by Tejodher Muppidi and published by . This book was released on 2003 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Encyclopedia of Aluminum and Its Alloys Two Volume Set Print written by George E. Totten and published by CRC Press. This book was released on 2018-12-07 with total page 2957 pages. Available in PDF, EPUB and Kindle. Book excerpt: This encyclopedia, written by authoritative experts under the guidance of an international panel of key researchers from academia, national laboratories, and industry, is a comprehensive reference covering all major aspects of metallurgical science and engineering of aluminum and its alloys. Topics covered include extractive metallurgy, powder metallurgy (including processing), physical metallurgy, production engineering, corrosion engineering, thermal processing (processes such as metalworking and welding, heat treatment, rolling, casting, hot and cold forming), surface engineering and structure such as crystallography and metallography.
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.
Download or read book Texture and Anisotropy of Polycrystals II written by C. Esling and published by . This book was released on 2005 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: Natural, as well as man-made, materials are often assumed to behave uniformly, exhibiting equal strength in all directions, because most of them have a polycrystalline structure. The anisotropy of the individual crystals, however, is smoothed out only in the presence of a large number of grains having a random distribution of orientations. In reality, there usually remains an anisotropy due to the existence of preferred orientations. Its magnitude depends upon the statistical distribution of grain orientations - the crystallographic texture or, more simply, the texture. -This governs the extremes, of the physical property of interest, which a single crystal of the material under consideration can exhibit in directional tests. Local variations in texture, as well as the arrangements and types of grain/phase boundaries, may give rise to inhomogeneous material properties. The texture also carries with it information on the history of a material's processing, use and misuse. A knowledge of the texture is a prerequisite for all quantitative techniques of materials characterization, and is based upon the interpretation of diffraction-peak intensities. It is also necessary to model the relationships between microstructural features and physical or mechanical properties. Therefore, the texture is of great value for quality control in a wide range of industrial applications, and in basic materials research.
Download or read book Electrochemical Processing in ULSI and MEMS 3 written by John O. Dukovic and published by The Electrochemical Society. This book was released on 2007-09 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers in this issue describe the latest advances in fundamental and practical aspects of electrochemical processes for fabrication of microelectronic devices and related structures. Topics range from plating to etching, chips to packages, mechanisms to models, through-silicon vias to nanotubes, tin to ruthenium, capping to cooling, porous gold to porous alumina, probe-card springs to solder balls, electroless deposition to CMP, TFT-LCDs to magnetic nanowires and beyond.
Download or read book Learning Through Movement written by and published by . This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Copper Interconnects New Contact Metallurgies structures and Low k Interlevel Dielectrics II written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2003 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Copper Interconnects New Contact Metallurgies structures and Low k Interlevel Dielectrics written by and published by The Electrochemical Society. This book was released on 2003 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Copper Fundamental Mechanisms for Microelectronic Applications written by Shyam P. Murarka and published by Wiley-Interscience. This book was released on 2000-04-06 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete guide to the state of the art and future direction of copper interconnect technology Owing to its performance advantages, copper metallization for IC interconnect is attracting tremendous interest in the semiconductor community worldwide. This timely book provides scientists and engineers with a much-needed, comprehensive reference on the fundamentals and applications of this emerging technology. The authors draw on more than a decade of intimate involvement with copper interconnect research, integrating the vast amounts of available knowledge and making clear the connection between mechanistic principles and relevant technologies. In-depth, cutting-edge discussions include: * The effects of copper in semiconductor materials, especially silicon * The fundamental chemistry and electro-chemistry of copper * The effects of copper on insulating materials such as glass and polymers * Intermetallic and interfacial reactions of copper in layered structures * Current and projected applications of copper in integrated circuits Copper-Fundamental Mechanisms for Microelectronic Applications also features extensive references, tables, and over 100 illustrations-including dual Damascene patterning necessary for copper interconnects. It is an excellent resource for anyone seeking to explore the current literature and gain insight into opportunities opening in the field.
