Download or read book Surface Reaction Kinetics in Chemical Vapor Deposition written by Eric Alan Haupfear and published by . This book was released on 1993 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Gas phase and Surface Chemistry of Vapor phase Deposition II and Process Control Diagnostics and Modeling in Semiconductor Manufacturing IV written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 2001 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CVD XII written by Klavs F. Jensen and published by . This book was released on 1993 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Fundamental Gas Phase and Surface Chemistry of Vapor Phase Materials Synthesis written by Mark Donald Allendorf and published by The Electrochemical Society. This book was released on 1999 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book TEOS based SiO2 Chemical Vapor Deposition Reaction Kinetics and Related Surface Chemistry written by and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum chemical studies of deposition and catalytic surface reactions written by Emil Kalered and published by Linköping University Electronic Press. This book was released on 2018-06-19 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum chemical calculations have been used to model chemical reactions in epitaxial growth of silicon carbide by chemical vapor deposition (CVD) processes and to study heterogeneous catalytic reactions for methanol synthesis. CVD is a common method to produce high-quality materials and e.g. thin films in the semiconductor industry, and one of the many usages of methanol is as a promising future renewable and sustainable energy carrier. To optimize the chemical processes it is essential to understand the reaction mechanisms. A comprehensive theoretical model for the process is therefore desired in order to be able to explore various variables that are difficult to investigate in situ. In this thesis reaction paths and reaction energies are computed using quantum chemical calculations. The quantum-chemical results can subsequently be used as input for thermodynamic, kinetic and computational fluid dynamics modelling in order to obtain data directly comparable with the experimental observations. For the CVD process, the effect of halogen addition to the gas mixture is studied by modelling the adsorption and diffusion of SiH2, SiCl2 and SiBr2 on the (0001?) 4H-SiC surface. SiH2 was found to bind strongest to the surface and SiBr2 binds slightly stronger than the SiCl2 molecule. The diffusion barrier is shown to be lower for SiH2 than for SiBr2 and SiCl2 which have similar barriers. SiBr2 and SiCl2 are found to have similar physisorption energies and bind stronger than the SiH2 molecule. Gibbs free-energy calculations also indicate that the SiC surface is not fully hydrogen terminated at CVD conditions since missing-neighboring pair of surface hydrogens is found to be common. Calculations for the (0001) surface show that SiCl, SiCl2, SiHCl, SiH, and SiH2 likely adsorb on a methylene site, but the processes are thermodynamically less favorable than their reverse reactions. However, the adsorbed products may be stabilized by subsequent surface reactions to form a larger structure. The formation of these larger structures is found to be fast enough to compete with the desorption processes. Also the Gibbs free energies for adsorption of Si atoms, SiX, SiX2, and SiHX where X is F or Br are presented. Adsorption of Si atoms is shown to be the most thermodynamically favorable reaction followed by SiX, SiHX, and SiX2, X being a halide. The results in this study suggest that the major Si contributors in the SiC–CVD process are Si atoms, SiX and SiH. Methanol can be synthesized from gaseous carbon dioxide and hydrogen using solid metal-metal oxide mixtures acting as heterogeneous catalysts. Since a large surface area of the catalyst enhances the speed of the heterogeneous reaction, the use of nanoparticles (NP) is expected to be advantageous due to the NPs’ large area to surface ratio. The plasma-induced creation of copper NPs is investigated. One important element during particle growth is the charging process where the variation of the work function (W) with particle size is a key quantity, and the variation becomes increasingly pronounced at smaller NP sizes. The work functions are computed for a set of NP charge numbers, sizes and shapes, using copper as a case study. A derived analytical expression for W is shown to give quite accurate estimates provided that the diameter of the NP is larger than about a nanometer and that the NP has relaxed to close to a spherical shape. For smaller sizes W deviates from the approximative expression, and also depends on the charge number. Some consequences of these results for NP charging process are outlined. Key reaction steps in the methanol synthesis reaction mechanism using a Cu/ZrO2 nanoparticle catalyst is investigated. Two different reaction paths for conversion of CO2 to CO is studied. The two paths result in the same complete reaction 2 CO2 ? 2 CO + O2 where ZrO2 (s) acts as a catalyst. The highest activation energies are significantly lower compared to that of the gas phase reaction. The presence of oxygen vacancies at the surface appear to be decisive for the catalytic process to be effective. Studies of the reaction kinetics show that when oxygen vacancies are present on the ZrO2 surface, carbon monoxide is produced within a microsecond. The IR spectra of CO2 and H2 interacting with ZrO2 and Cu under conditions that correspond to the catalyzed CH3OH production process is also studied experimentally and compared to results from the theoretical computations. Surface structures and gas-phase molecules are identified through the spectral lines by matching them to specific vibrational modes from the literature and from the new computational results. Several surface structures are verified and can be used to pin point surface structures in the reaction path. This gives important information that help decipher how the reaction mechanism of the CO2 conversion and ultimately may aid to improve the methanol synthesis process.

Download or read book Proceedings of the Ninth International Conference on Chemical Vapor Deposition 1984 written by McD. Robinson and published by . This book was released on 1984 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Vapor Deposition written by Jong-Hee Park and published by ASM International. This book was released on 2001 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Principles of Chemical Vapor Deposition written by D.M. Dobkin and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.

Download or read book Proceedings of the International Conference on Chemical Vapor Deposition written by and published by . This book was released on 1987 with total page 1294 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of Silicon and Silicon Based Dielectrics written by Atul Gupta and published by . This book was released on 2001 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: Plasma deposition, Surface chemistry, Ab-initio calculations, Reaction mechanisms, Kinetics, Amorphous silicon, Silicon dioxide.

Download or read book Surface Reactions written by R.J. Madix and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 291 pages. Available in PDF, EPUB and Kindle. Book excerpt: A treatment of the important aspects of physical chemistry on metal surfaces, including selective oxidation, desulfurization, cyclization, metal-organic chemical vapor deposition, alkane activation and hydrogen dissociation dynamics. Case studies focus on on the chemistry of selected systems, rather than the techniques, to convey the excitement of recent developments.

Download or read book Theory and Application of Laser Chemical Vapor Deposition written by J. Mazumder and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this monograph, the authors offer a comprehensive examination of the latest research on Laser Chemical Vapor Deposition (LCVD). Chapters explore the physics of LCVD as well as the principles of a wide range of related phenomena-including laser-matter interactions, heat transfer, fluid flow, chemical kinetics, and adsorption. With this reference, researchers will discover how to apply these principles to developing theories about various types of LCVD processes; gain greater insight into the basic mechanisms of LCVD; and obtain the ability to design and control an LCVD system.

Download or read book An Examination of the Kinetics and Mechanisms of the Chemical Vapor Deposition of Aluminum Nitride written by Scott Arnold Hanson and published by . This book was released on 1993 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Chemical Vapor Deposition written by Hugh O. Pierson and published by William Andrew. This book was released on 1999-09-01 with total page 507 pages. Available in PDF, EPUB and Kindle. Book excerpt: Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.

Download or read book Chemical Vapor Deposition written by Srinivasan Sivaram and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.

Download or read book Nucleation Promotion and Kinetics on Chemical Vapor Deposited Thin Films written by Kai-Ann Yang and published by . This book was released on 1999 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: