Download or read book Surface Morphology Evolution During Low Energy Ion Bombardment of Silicon and Gallium Antimonide written by Gözde Özaydin-İnce and published by . This book was released on 2008 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Ion bombardment is a widely used technique to modify the properties of materials for technological applications. In recent years, surface evolution during ion bombardment has also attracted considerable fundamental interest because of the desire to better understand the physical processes occurring at the surface and the frequent instability of surfaces to the spontaneous formation of nanostructures during bombardment. In this research, the surface morphology evolution of Silicon(100) and Gallium Antimonide(100) during low energy Argon ion bombardment was studied using real-time grazing-incidence small angle X-ray scattering and ex-situ atomic force microscopy. The surface morphology evolution of Si during ion bombardment as a function of substrate temperature was examined. Although, the surface was amorphized during bombardment at room temperature, above approximately 400°C a transition from amorphous to crystalline structure occurred. Above 500°C, the surface remained crystalline and the growing corrugations exhibited dynamic scaling with power law growth in amplitude and characteristic length scale. The ripple formation by off normal incidence low energy ion bombardment and ripple smoothening by normal incidence ion bombardment at room temperature were studied. Using real-time X-ray scattering, an exponential growth of the intensities during ripple formation was observed confirming that the early time kinetics obeyed the Bradley-Harper model. However, at later times the growth slowed and deviated from the predictions of the linear model. Ripple smoothening experiments, on the other hand, showed that the ripple structures eroded during normal incidence ion bombardment, possibly due to an additional lateral atomic smoothening mechanism active at these incidence angles. The real-time measurements showed that the small length scales decayed faster than the large length scales as predicted by the linear model, however the decay mechanisms were more complex than expected from existing linear theory. It was observed that, although Si surfaces remained smooth during bombardment at room temperature when a small amount of Molybdenum atoms was supplied to the surface during ion bombardment, correlated structures with two different characteristic length scales developed. The shorter length scale features ("dots") coarsened with time until they reached a constant spatial wavelength. The longer length scale corrugations associated with kinetic roughening, however, continued to grow in amplitude during bombardment. The evolution of this kinetic roughening could be described by the Family-Vicsek scaling hypothesis. A new noise term associated with inhomogeneities in local relaxation was proposed to quantitatively explain the early time kinetics. In addition, in-situ wafer curvature measurements were performed during ion bombardment to study the real-time stress state of the surface. The measurements showed that initially a compressive stress developed during bombardment, likely due to amorphization of the surface. However, seeding caused a larger tensile stress to develop with further bombardment, possibly due to the formation of higher density regions around the Mo seed atoms on the surface. The effects of this large tensile stress on the surface instability and the formation of the nanodots were also examined. Simulations of existing continuum equations of surface morphology evolution during normal incidence ion bombardment at room temperature were performed to study the effects of individual terms on the surface morphology, as well as their relations with each other. It was observed that the noisy Kuramoto-Sivashinsky model could only qualitatively predict the surface evolution, but could not reproduce all of the experimental results. Finally, the morphology evolution of GaSb(100) surfaces during ion bombardment at different energies was also studied. Formation of correlated nanodots with a length scale of approximately 30 nm was observed during bombardment at room temperature without seeding.
Download or read book Surface Morphology Evolution in Silicon During Ion Beam Processing written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Semiconductor Industry Association (SIA) projects that the semiconductor chips used in personal computers and scientific workstations will reach five times the speed and ten times the memory capacity of the current pentium-class processor by the year 2007. However, 1 GHz on-chip clock speeds and 64 Gbits/Chip DRAM technology will not come easy and without a price. Such technologies will require scaling the minimum feature size of CMOS devices (the transistors in the silicon chip) down to below 100nm from the current 180 to 250 nm. This requirement has profound implications for device manufacturing. Existing processing techniques must increasingly be understood quantitatively and modeled with unprecedented precision. Indeed, revolutionary advances in the development of physics-based process simulation tools will be required to achieve the goals for cost efficient manufacturing, and to satisfy the needs of the defense industrial base. These advances will necessitate a fundamental improvement in our basic understanding of microstructure evolution during processing. In order to cut development time and costs, the semiconductor industry makes extensive use of simple models of dopant implantation, and of phenomenological models of defect annealing and diffusion. However, the production of a single device often requires more than 200 processing steps, and the cumulative effects of the various steps are far too complex to be treated with these models. The lack of accurate process modeling simulators is proving to be a serious impediment to the development of next generation devices. New atomic-level models are required to describe the point defect distributions produced by the implantation process, and the defect and dopant diffusion resulting from rapid thermal annealing steps. In this LDRD project, we investigated the migration kinetics of defects and dopants in silicon both experimentally and theoretically to provide a fundamental database for use in the development of predictive process simulators. The results were then used to develop kinetic Monte Carlo simulations that, when coupled to molecular dynamics studies, could be used to study and compare the long time and length scale behavior of ion implanted silicon to the predictions of experiments. The results of these kinetic Monte Carlo simulations were validated with experimental data and then used to predict boron activation fractions during annealing of ion implanted silicon under conditions similar to those encountered in the semiconductor manufacturing environment. The success of the work and promise of the approach are reflected in the number of publication and in the fact that following completion of the project we signed a funds-in CRADA with Intel corporation and Applied Materials Corporation to continue the research.
Download or read book Surface Modifications of Silicon Induced by Low Energy Reactive Ion Bombardment written by Wayne Harold Chang and published by . This book was released on 1993 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Evolution of the Surface Morphology of Silicon During Aqueous Etching written by Theresa Anne Newton and published by . This book was released on 2000 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Modifications of Silicon Induced by Low Energy Reactive Ion Bombardment written by Wayne Harold Chang and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structure Stress and Surface Evolution in Silicon Due to Ion Bombardment written by Nagarajan Kalyanasundaram and published by ProQuest. This book was released on 2007 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first part of the work, a molecular dynamics simulation methodology using empirical interatomic potentials is developed to study argon ion bombardment of silicon. Sputtering, structure and stress evolution are studied at 500eV and 700eV beam energies. The ion beam energies considered in this work are similar to those used in both nanometer-scale surface patterning experiments and a particular microelectromechanical systems (MEMS) fabrication technique.
Download or read book Effect of Irradiation Parameters on the Surface Pattern Evolution in Silicon Due to Ion Bombardment written by Kallol Das and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Vicinal Si 001 Surface Interactions of Low Energy Ion Bombardment and Annealing Procedures Studied by LEED and STM written by Carolyn M. Matzke and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Evolution During Gallium Arsenide Homoepitaxy with Molecular Beam Epitaxy written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs grown with MBE is the basis for many useful optoelectric devices. Measurements are presented of the smoothing of patterned and randomly roughened GaAs surfaces during homoepitaxy over a large range of Ga flux, substrate temperatures, arsenic fluxes, and Bi surfactant. The bulk of these measurements were taken by in-situ elastic light scattering or ex-situ AFM. These measurements provide experimental support for a non-linear continuum growth model that has been derived analytically from basic atomic level phenomena that occur in epitaxial film growth. During epitaxial growth the smoothing is observed to change in nature as the surface amplitude decreases. One of the regimes of smoothing is associated with the linear smoothing coefficients from the physically based non-linear continuum growth equation. The temperature and growth rate dependence of the smoothing coefficients are presented and found to be in good agreement with predictions from the continuum growth model. A key parameter in the continuum growth equation, the density of atomic steps, is measured independently using AFM. The step density, which agrees with theoretical predictions, is used to compute smoothing coefficients and is shown to be in agreement with the light scattering measurements. Complex shapes are observed for epitaxial growth on patterned GaAs substrates. Two characteristic surface morphologies were observed. The first is characterized by downward V-shaped cusps and rounded mounds caused by non-linear smoothing. The second morphology is similar, however the symmetry of the surface structure was inverted. This surface morphology has not been previously observed in GaAs. Step edge attachment was found to be the driving mechanism that produced both of these morphologies. Bismuth is observed to act as a surfactant in GaAs homoepitaxy. While Bi assisted growth is found to decrease the overall surface roughness, it is also found to alter the characteristics of the surface morphology. Notably.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 1990 with total page 1738 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1996 with total page 1650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts Index written by and published by . This book was released on 1983 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book INIS Atomindex written by and published by . This book was released on 1980 with total page 1098 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1996 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Introduction to Surface Analysis by XPS and AES written by John F. Watts and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 307 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides a concise yet comprehensive introduction to XPS and AES techniques in surface analysis This accessible second edition of the bestselling book, An Introduction to Surface Analysis by XPS and AES, 2nd Edition explores the basic principles and applications of X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) techniques. It starts with an examination of the basic concepts of electron spectroscopy and electron spectrometer design, followed by a qualitative and quantitative interpretation of the electron spectrum. Chapters examine recent innovations in instrument design and key applications in metallurgy, biomaterials, and electronics. Practical and concise, it includes compositional depth profiling; multi-technique analysis; and everything about samples—including their handling, preparation, stability, and more. Topics discussed in more depth include peak fitting, energy loss background analysis, multi-technique analysis, and multi-technique profiling. The book finishes with chapters on applications of electron spectroscopy in materials science and the comparison of XPS and AES with other analytical techniques. Extensively revised and updated with new material on NAPXPS, twin anode monochromators, gas cluster ion sources, valence band spectra, hydrogen detection, and quantification Explores key spectroscopic techniques in surface analysis Provides descriptions of latest instruments and techniques Includes a detailed glossary of key surface analysis terms Features an extensive bibliography of key references and additional reading Uses a non-theoretical style to appeal to industrial surface analysis sectors An Introduction to Surface Analysis by XPS and AES, 2nd Edition is an excellent introductory text for undergraduates, first-year postgraduates, and industrial users of XPS and AES.
