Download or read book Sub micron InP GaAsSb InP Double Heterojunction Bipolar Transistors for Ultra High speed Digital Integrated Circuits written by Urs Hammer and published by . This book was released on 2010 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of High Speed InP GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits written by Wei Quan and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Download or read book Design Fabrication and Characterization of Ultra High Speed InP GaAsSb InP Double Heterojunction Bipolar Transistors written by Martin W. Dvorak and published by . This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology written by Tomas Krämer and published by . This book was released on 2010 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of High speed Type II GaAsSb InP Double heterojunction Bipolar Transistors written by Benjamin Chu-Kung and published by . This book was released on 1972 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization Simulation and Optimization of Type II GaAsSb based Double Heterojunction Bipolar Transistors written by Nick Gengming Tao and published by . This book was released on 2006 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.

Download or read book Development and Optimization of High Speed InP GaAsSb Double Heterojunction Bipolar Transistors written by Maria Alexandrova and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Event Driven Parallel Processing Subsystem for Energy Efficient Mobile Medical Instrumentation written by Florian Stefan Glaser and published by BoD – Books on Demand. This book was released on 2022-12-02 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aging population and the thereby ever-rising cost of health services call for novel and innovative solutions for providing medical care and services. So far, medical care is primarily provided in the form of time-consuming in-person appointments with trained personnel and expensive, stationary instrumentation equipment. As for many current and past challenges, the advances in microelectronics are a crucial enabler and offer a plethora of opportunities. With key building blocks such as sensing, processing, and communication systems and circuits getting smaller, cheaper, and more energy-efficient, personal and wearable or even implantable point-of-care devices with medicalgrade instrumentation capabilities become feasible. Device size and battery lifetime are paramount for the realization of such devices. Besides integrating the required functionality into as few individual microelectronic components as possible, the energy efficiency of such is crucial to reduce battery size, usually being the dominant contributor to overall device size. In this thesis, we present two major contributions to achieve the discussed goals in the context of miniaturized medical instrumentation: First, we present a synchronization solution for embedded, parallel near-threshold computing (NTC), a promising concept for enabling the required processing capabilities with an energy efficiency that is suitable for highly mobile devices with very limited battery capacity. Our proposed solution aims at increasing energy efficiency and performance for parallel NTC clusters by maximizing the effective utilization of the available cores under parallel workloads. We describe a hardware unit that enables fine-grain parallelization by greatly optimizing and accelerating core-to-core synchronization and communication and analyze the impact of those mechanisms on the overall performance and energy efficiency of an eight-core cluster. With a range of digital signal processing (DSP) applications typical for the targeted systems, the proposed hardware unit improves performance by up to 92% and 23% on average and energy efficiency by up to 98% and 39% on average. In the second part, we present a MCU processing and control subsystem (MPCS) for the integration into VivoSoC, a highly versatile single-chip solution for mobile medical instrumentation. In addition to the MPCS, it includes a multitude of analog front-ends (AFEs) and a multi-channel power management IC (PMIC) for voltage conversion. ...

Download or read book An Open Source Research Platform for Heterogeneous Systems on Chip written by Andreas Dominic Kurth and published by BoD – Books on Demand. This book was released on 2022-10-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterogeneous systems on chip (HeSoCs) combine general-purpose, feature-rich multi-core host processors with domain-specific programmable many-core accelerators (PMCAs) to unite versatility with energy efficiency and peak performance. By virtue of their heterogeneity, HeSoCs hold the promise of increasing performance and energy efficiency compared to homogeneous multiprocessors, because applications can be executed on hardware that is designed for them. However, this heterogeneity also increases system complexity substantially. This thesis presents the first research platform for HeSoCs where all components, from accelerator cores to application programming interface, are available under permissive open-source licenses. We begin by identifying the hardware and software components that are required in HeSoCs and by designing a representative hardware and software architecture. We then design, implement, and evaluate four critical HeSoC components that have not been discussed in research at the level required for an open-source implementation: First, we present a modular, topology-agnostic, high-performance on-chip communication platform, which adheres to a state-of-the-art industry-standard protocol. We show that the platform can be used to build high-bandwidth (e.g., 2.5 GHz and 1024 bit data width) end-to-end communication fabrics with high degrees of concurrency (e.g., up to 256 independent concurrent transactions). Second, we present a modular and efficient solution for implementing atomic memory operations in highly-scalable many-core processors, which demonstrates near-optimal linear throughput scaling for various synthetic and real-world workloads and requires only 0.5 kGE per core. Third, we present a hardware-software solution for shared virtual memory that avoids the majority of translation lookaside buffer misses with prefetching, supports parallel burst transfers without additional buffers, and can be scaled with the workload and number of parallel processors. Our work improves accelerator performance for memory-intensive kernels by up to 4×. Fourth, we present a software toolchain for mixed-data-model heterogeneous compilation and OpenMP offloading. Our work enables transparent memory sharing between a 64-bit host processor and a 32-bit accelerator at overheads below 0.7 % compared to 32-bit-only execution. Finally, we combine our contributions to a research platform for state-of-the-art HeSoCs and demonstrate its performance and flexibility.

Download or read book Fighting Back the Von Neumann Bottleneck with Small and Large Scale Vector Microprocessors written by Matheus Cavalcante and published by BoD – Books on Demand. This book was released on 2023-08-24 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: In his seminal Turing Award Lecture, Backus discussed the issues stemming from the word-at-a-time style of programming inherited from the von Neumann computer. More than forty years later, computer architects must be creative to amortize the von Neumann Bottleneck (VNB) associated with fetching and decoding instructions which only keep the datapath busy for a very short period of time. In particular, vector processors promise to be one of the most efficient architectures to tackle the VNB, by amortizing the energy overhead of instruction fetching and decoding over several chunks of data. This work explores vector processing as an option to build small and efficient processing elements for large-scale clusters of cores sharing access to tightly-coupled L1 memory

Download or read book SiGe GaAs and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

Download or read book Terahertz Sensing Technology Vol 1 Electronic Devices And Advanced Systems Technology written by Michael S Shur and published by World Scientific. This book was released on 2003-07-14 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.

Download or read book InP GaAsSb InP Double Heterojunction Bipolar Transistors written by C. R. Bolgnesi and published by . This book was released on 2002 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are some of the fastest bipolar transistors ever fabricated, with current gain cutoff and maximum oscillation frequencies simultaneously exceeding 300 GHz while maintaining breakdown voltages BV(sub ceo> 6V I. InP/GaAsSb/InP DHBTs are particularly appealing because excellent device figures of merit are achievable with relatively simple structures involving abrupt junctions and uniform doping levels and compositions. This is a tremendous manufacturability advantage and the reason why some organizations have moved aggressively toward GaAsSb DHBT production despite a relative scarcity of information on the physical properties of the GaAsSb alloy in comparison to GalnAs. The present paper reviews some of the key concepts associated with the use of GaAsSb base layers, and discusses the physical operation InP/GaAsSb/InP DHBTs. In particular, we will describe the implications of the staggered band lineup at the E/B and B/C heterojunctions for charge storage in the devices, and show that InP/GaAsSb/InP DHBTs offer inherent advantages from that point of view. We will also show that GaAsSb based DHBTs can be expected to display better scalability than GainAs-based devices because of their inherently superior base Ohmic contacts.

Download or read book Design Simulation and Modelling of InP GaAsSb InP Double Heterojunction Bipolar Transistors written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Then the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design. The degradation of device performance at high currents due to the formation of a parasitic barrier in the collector region and the base push out effects is examined. Finally, a device structure with improved high frequency performance is described.

Download or read book Development of Sub millimeter wave InP GaAsSb Double Heterojunction Bipolar Transistors written by Rickard Lövblom and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Terahertz Sensing Technology Electronic devices and advanced systems technology written by Dwight L. Woolard and published by World Scientific. This book was released on 2003 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas.