Download or read book Study of Bulk Damage in High Resistivity Silicon Detectors Irradiated by High Dose of 6 Co gamma radiation written by and published by . This book was released on 1996 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: High dose (> 200 Mrad) [gamma]-radiation induced displacement damage (or bulk damage) in high resistivity (6--10 k[Omega]-cm) silicon detectors has been studied. It has been found that detector bulk leakage current increases with [gamma] dose at a rate of 3.3 × 10−7 A/cm3/Mrad. This introduction rate of bulk leakage current makes the introduction of generation centers by 210 Mrad of [gamma]-radiation comparable to that by 1 × 1012 n/cm2 of neutron radiation. Significant carrier removal (or donor removal), about 100%, was found in detectors irradiated to 215 Mrad. Space charge sign inversion (SCSI) (or type inversion) was observed in detectors irradiated to ≥ 215 Mrad using transient current technique (TCT). As many as seven deep levels have been observed by current deep level transient spectroscopy (I-DLTS). There was little or no annealing (or reverse annealing) for detectors irradiated to 215 Mrad. Some annealing for detectors irradiated to 500 Mrad have been observed.

Download or read book Study of Bulk Damage in High Resistivity Silicon Detectors Irradiated by High Dose Of sup 60 Co gamma radiation written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High dose (> 200 Mrad)[gamma]-radiation induced displacement damage (or bulk damage) in high resistivity (6--10 k[Omega]-cm) silicon detectors has been studied. It has been found that detector bulk leakage current increases with[gamma] dose at a rate of 3.3[times] 10[sup[minus]7] A/cm[sup 3]/Mrad. This introduction rate of bulk leakage current makes the introduction of generation centers by 210 Mrad of[gamma]-radiation comparable to that by 1[times] 10[sup 12] n/cm[sup 2] of neutron radiation. Significant carrier removal (or donor removal), about 100%, was found in detectors irradiated to 215 Mrad. Space charge sign inversion (SCSI) (or type inversion) was observed in detectors irradiated to[ge] 215 Mrad using transient current technique (TCT). As many as seven deep levels have been observed by current deep level transient spectroscopy (I-DLTS). There was little or no annealing (or reverse annealing) for detectors irradiated to 215 Mrad. Some annealing for detectors irradiated to 500 Mrad have been observed.

Download or read book Experimental Studies of Radiation Damage of Silicon Detectors Internal Report written by and published by . This book was released on 1994 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Particle Physics Reference Library written by Christian W. Fabjan and published by Springer Nature. This book was released on 2020 with total page 1083 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second open access volume of the handbook series deals with detectors, large experimental facilities and data handling, both for accelerator and non-accelerator based experiments. It also covers applications in medicine and life sciences. A joint CERN-Springer initiative, the "Particle Physics Reference Library" provides revised and updated contributions based on previously published material in the well-known Landolt-Boernstein series on particle physics, accelerators and detectors (volumes 21A, B1,B2,C), which took stock of the field approximately one decade ago. Central to this new initiative is publication under full open access

Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Download or read book Studies of Deep Levels in High Resistivity Silicon Detectors Irradiated by High Fluence Fast Neutrons Using a Theramally Stimulated Current Spectrometer written by and published by . This book was released on 1993 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Damage in Barium Fluoride Detector Materials written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: To develop radiation hard detectors, particularly for high energy physics studies, radiation damage is being studied in BaF2, both undoped and doped with La, Ce, Nd, Eu, Gd and Tm. Some dopants reduce radiation damage. In La doped BaF2 they reduce the unwanted long lifetime luminescence which interferes with the short-lived fluorescence used to detect particles. Radiation induced coloring is being studied with facilities for making optical measurements before, during and after irradiation with 6°C0 gamma rays. Doses of 106 rad, or less, create only ionization induced charge transfer effects since lattice atom displacement damage is negligible at these doses. All crystals studied exhibit color center formation, between approximately 200 and 800 nm, during irradiation and color center decay after irradiation. Thus only measurements made during irradiation show the total absorption present in a radiation field. Both undoped and La doped BaF2 develop damage at minimum detectable levels in the UV--which is important for particle detectors. For particle detector applications these studies must be extended to high dose irradiations with particles energetic enough to cause lattice atom displacement damage. In principle, the reduction in damage provided by dopants could apply to other applications requiring radiation damage resistant materials.

Download or read book RADECS written by and published by . This book was released on 2003 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Results from Irradiation Tests on D0 Run 2a Silicon Detectors at the Radiation Damage Facility at Fermilab written by J. Gardner and published by . This book was released on 2006 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several different spare modules of the D0 experiment Silicon Microstrip Tracker (SMT) have been irradiated at the Fermilab Booster Radiation Damage Facility (RDF). The total dose received was 2.1 MRads with a proton flux of {approx} 3 {center_dot} 10{sup 11} p/cm{sup 2} sec. The irradiation was carried out in steps of 0.3 or 0.6 MRad, with several days between the steps to allow for annealing and measurements. The leakage currents and depletion voltages of the devices increased with dose, as expected from bulk radiation damage. The double sided, double metal devices showed worse degradation than the less complex detectors.

Download or read book Temperature Stimulated Reverse Annealing of Neutron Induced Damage in High Resistivity Silicon Detectors written by and published by . This book was released on 1995 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Neutron irradiated high resistivity silicon detectors have been subjected to elevated temperature annealings (ETA). It has been found that both detector full depletion voltage and leakage current exhibit reverse annealing behavior for highly irradiated detectors: increase with ETA. Laser induced current shapes have indicated a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Data of current deep level transient spectroscopy (I-DLTS) have shown that the dominant microscopic effect is the increase of a level at 0.39 eV. This level is tentatively identified as the V-V− level at E{sub c}-0.39 eV and/or the C{sub i}-O{sub i} level at E{sub v} + 0.36 eV. Data of thermally stimulated current (TSC) have shown increases of levels at 0.26 eV and 0.40 eV with ETA, suggesting that the level responsible for the reverse annealing effects be the V-V center (V-V− at E{sub c}-0.25 eV and V-V− at E{sub c}-0.39 eV). Some local, non-uniform trappings of laser induced electrons and holes have been observed near the pt contact at low voltages after ETA at intermediate temperatures (110--150 °C).

Download or read book Fluka written by Alfredo Ferrari and published by . This book was released on 2005 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Damage in Proton Irradiated Epitaxial Silicon Detectors written by Jörn Lange and published by . This book was released on 2008 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Download or read book Radiation Damage in Silicon Detectors written by and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A review is presented of the effects of radiation damage on silicon detectors which are being considered for high energy physics applications. The main degradation in performance is an increase in leakage current, which can be well characterized by an empirical damage constant for many radiations. A summary of data on damage constants is given. A brief discussion of annealing effects in terms of band gap level changes is included.

Download or read book Radiation Damage Studies for the D0 Silicon Detector written by F. Lehner and published by . This book was released on 2004 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10{sup 14} p/cm{sup 2} at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling.