Download or read book Studies of Structural Defects in Si 100 Using Surface sensitive High resolution Electron Diffraction written by Joe Allen Martin and published by . This book was released on 1986 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Resolution Electron Microscopy of Defects in Materials Volume 183 written by Materials Research Society and published by Pittsburgh, Pa. : Materials Research Society. This book was released on 1990-08-10 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1988 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Publications of the National Bureau of Standards Catalog written by United States. National Bureau of Standards and published by . This book was released on 1984 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigating Photoinduced Structural Changes in Si Using Femtosecond Electron Diffraction written by Maher Harb and published by . This book was released on 2009 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis reports on developing a femtosecond electron diffraction technique and its application in following the structural changes associated with photoexcited Si. Time resolved electron diffraction is capable in principle of capturing transient structures of photoinduced phenomena with femtosecond time resolution. In practice, however, the time resolution is severely limited by the broadening of electron pulses due to space-charge forces. Another technical difficulty lies in that diffraction in transmission geometry requires samples that are semi-transparent to electrons. These experimental challenges were dealt with using innovative engineering and software development, and novel nanofabrication methods. Subsequently, a robust highly automated experimental setup was established, and 50 nm free-standing membranes of polycrystalline Si were nanofabricated. These membranes were first excited below damage threshold with 387 nm light, at an absorbed fluence of 5.6 mJ/cm2. The observed loss of intensity and associated dynamics under these conditions are related to the Debye-Waller effect as the lattice heats up through electron-phonon processes. At high excitation levels, greater than ∼6% of the valence electron density, the crystalline structure of the lattice was lost in 500 fs. This observed time scale is indicative of an electronically driven order-to-disorder phase transition due to an abrupt change in the potential-energy landscape of the lattice. In addition, it was discovered that the high sensitivity of the electron diffraction process to shear-type deformation in single crystals makes the technique ideal to the generation and detection of coherent acoustic phonons. Longitudinal and shear acoustic phonons were subsequently resolved in (001)-oriented Si crystals. This study constitutes the first direct observation of shear phonons in symmetrically cut crystals, in sharp in contrast to the all-optical methods that rely on crystals asymmetrically cut at 20° to enhance the amplitude of the shear mode in order to detect its displacements.

Download or read book Springer Handbook of Surface Science written by Mario Rocca and published by Springer Nature. This book was released on 2021-01-14 with total page 1273 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook delivers an up-to-date, comprehensive and authoritative coverage of the broad field of surface science, encompassing a range of important materials such metals, semiconductors, insulators, ultrathin films and supported nanoobjects. Over 100 experts from all branches of experiment and theory review in 39 chapters all major aspects of solid-state surfaces, from basic principles to applications, including the latest, ground-breaking research results. Beginning with the fundamental background of kinetics and thermodynamics at surfaces, the handbook leads the reader through the basics of crystallographic structures and electronic properties, to the advanced topics at the forefront of current research. These include but are not limited to novel applications in nanoelectronics, nanomechanical devices, plasmonics, carbon films, catalysis, and biology. The handbook is an ideal reference guide and instructional aid for a wide range of physicists, chemists, materials scientists and engineers active throughout academic and industrial research.

Download or read book Heteroepitaxial Semiconductors for Electronic Devices written by G.W. Cullen and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.

Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Resolution Transmission Electron Microscopy written by Peter Buseck and published by Oxford University Press. This book was released on 1989-02-02 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an introduction to the fundamental concepts, techniques, and methods used for electron microscopy at high resolution in space, energy, and even in time. It delineates the theory of elastic scattering, which is most useful for spectroscopic and chemical analyses. There are also discussions of the theory and practice of image calculations, and applications of HRTEM to the study of solid surfaces, highly disordered materials, solid state chemistry, mineralogy, semiconductors and metals. Contributors include J. Cowley, J. Spence, P. Buseck, P. Self, and M.A. O'Keefe. Compiled by experts in the fields of geology, physics and chemistry, this comprehensive text will be the standard reference for years to come.

Download or read book An Electron Diffraction Study of the Structure of Silicon 100 written by Thomas David Poppendieck and published by . This book was released on 1977 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Wafer Bonding Science Technology and Applications V written by Charles E. Hunt and published by The Electrochemical Society. This book was released on 2001 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metals Abstracts Index written by and published by . This book was released on 1995 with total page 1390 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modern Techniques of Surface Science written by D. P. Woodruff and published by Cambridge University Press. This book was released on 1994-03-03 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt: Revised and expanded second edition of the standard work on new techniques for studying solid surfaces.

Download or read book Metals Abstracts written by and published by . This book was released on 1995 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaP Heteroepitaxy on Si 100 written by Henning Döscher and published by Springer Science & Business Media. This book was released on 2013-11-29 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

Download or read book Investigating Photoinduced Structural Changes in Silicon Using Femtosecond Electron Diffraction written by Maher Harb and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: