Download or read book Structure and Optical Properties of Some Amorphous Ii vi Compound Semiconductors written by H. M. Brown and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of Crystalline and Amorphous Semiconductors written by Sadao Adachi and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.
Download or read book Structural and Optical Properties of II VI and III V Compound Semiconductors written by Jingyi Huang and published by . This book was released on 2013 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along 110 compared to 100. High strain fields were observed in 100 scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in 110 scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.
Download or read book Optical Properties of II VI Semiconductor Materials and Superlattice Structures written by Tuyen K. Tran and published by . This book was released on 1996 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Optical Properties of Wide Gap II VI Low Dimensional Semiconductors written by T.C. McGill and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.
Download or read book Optical Constants of Crystalline and Amorphous Semiconductors written by Sadao Adachi and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 725 pages. Available in PDF, EPUB and Kindle. Book excerpt: Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.
Download or read book Optical Properties of Selected II VI Semiconductor Compounds written by Yamina Lansari and published by . This book was released on 1986 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Structure and Optical Properties of Semiconductors written by Marvin L. Cohen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of Novel II VI Semiconductor Films and Quantum Well Structures written by Nancy Catherine Giles and published by . This book was released on 1987 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook on Physical Properties of Semiconductors written by Sadao Adachi and published by Springer Science & Business Media. This book was released on 2004-04-30 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this 3-volume reference is to present accurate, reliable and up-to-date information on the physical properties of group IV elemental semiconductors (Vol. 1), III-V compound semiconductors (Vol. 2) and II-VI semiconductors (Vol. 3). The data on the physical properties of each material are organized in the same way throughout these volumes to facilitate searching for information. The physical properties considered in these volumes can be classified into 12 groups: structural properties; -thermal properties; -elastic properties; -phonons and lattice vibronic properties; -collective effects and related properties; -energy-band structure: energy-band gaps; -energy-band structure: electron and hole effective mass; -electronic deformation potential; -electron affinity and Schottky barrier height; -optical properties; -elastooptic, electrooptic and nonlinear optical properties; and, -carrier transport properties. An extensive bibliography is included for those who wish to find additional information.
Download or read book Electronic Structure and Optical Properties of III V and II VI Semiconductor Superlattices written by Neil Fraser Johnson and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of Wide Band Gap II VI Semiconductor Materials written by Kimberly Jo Gossett and published by . This book was released on 1994 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nonlinear Optical Properties of II VI Semiconductor Compounds Grown by Molecular Beam Epitaxy written by David Roger Andersen and published by . This book was released on 1986 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Optical Properties of Wide Gap II VI Low Dimensional Semiconductors written by T C McGill and published by . This book was released on 1989-08-01 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of Wide Band Gap II VI Semiconductors written by and published by . This book was released on 1992 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous Semiconductors written by Kazuo Morigaki and published by John Wiley & Sons. This book was released on 2017-03-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions
Download or read book Physics of Amorphous Semiconductors written by Kazuo Morigaki and published by World Scientific. This book was released on 1999 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si: H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si: H, nature of weak bonds and gap states in a-Si: H, mechanisms for light-induced defect creation in a-Si: H and chalcogenides, quantum phenomena in multilayer fi
