Download or read book Structural and Optical Properties of II VI and III V Compound Semiconductors written by Jingyi Huang and published by . This book was released on 2013 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along 110 compared to 100. High strain fields were observed in 100 scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in 110 scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.
Download or read book II VI Semiconductor Materials and their Applications written by MariaC. Tamargo and published by Routledge. This book was released on 2018-05-04 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.
Download or read book Ii vi Semiconductor Compounds written by Mukesh Jain and published by World Scientific. This book was released on 1993-05-04 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents: X-Ray Characterisation of II-VI Semiconductor Materials (D Gao et al.)Electronic Structure of II-VI Semiconductors and Their Alloys (S-H Wei)Radiative Recombination Processes in Rare Earth Doped II-VI Materials (M Godlewski et al.)Nonlinear Optical Properties of Heavily Doped CdS (U Neukirch)Nanostructures of Broad Gap (II,Mn) VI Semiconductors (W Heimbrodt & O Goede)Co-Based II-VI Semimagnetic Semiconductors (A Twardowski et al.)Photoluminescence and Raman Scattering of ZnSe-ZnTe Strained Layer Superlattices (K Kumazaki)Novel Electronic Processes in Mercury-Based Superlattices (J R Meyer et al.)Strain, Pressure and Piezoelectric Effects in Strained II-VI Superlattices and Heterostructures (E Anastassakia)Electronic Structures of Strained II-VI Superlattices (T Nakayama)Devices and Applications of II-VI Compounds (S Colak)Solar Cells Based on II-VI Semiconductors (H Uda)ZnSe and Its Applications for Blue-Light Laser Diodes (M Pessa & D Ahn)Molecular Beam Epitaxy of HgCdTe for Electro-Optical Infrared Applications (J M A Cortés)and other papers Readership: Condensed matter physicists and electronic engineers. keywords:
Download or read book Structure and Optical Properties of Some Amorphous Ii vi Compound Semiconductors written by H. M. Brown and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Structure and Optical Properties of III V and II VI Semiconductor Superlattices written by Neil Fraser Johnson and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Download or read book Compound Semiconductor Strained Layer Superlattices written by R.M. Biefeld and published by Trans Tech Publications Ltd. This book was released on 1989-01-01 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: -Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices -Metastability in Semiconductor Strained-Layer Structures -The Morphology of MOCVD-Grown Semiconductor Multilayers -Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures -Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability -The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices -Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems -II-VI Strained-Layer Semiconductor Superlattices
Download or read book Structural Characterization of II VI and III V Compound Semiconductor Heterostructures and Superlattices written by Lu Ouyang and published by . This book was released on 2012 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research described in this dissertation has involved the use of transmission electron microcopy (TEM) to characterize the structural properties of II-VI and III-V compound semiconductor heterostructures and superlattices. The microstructure of thick ZnTe epilayers (~2.4 m) grown by molecular beam epitaxy (MBE) under virtually identical conditions on GaSb, InAs, InP and GaAs (100) substrates were compared using TEM. High-resolution electron micrographs revealed a highly coherent interface for the ZnTe/GaSb sample, and showed extensive areas with well-separated interfacial misfit dislocations for the ZnTe/InAs sample. Lomer edge dislocations and 60o dislocations were commonly observed at the interfaces of the ZnTe/InP and ZnTe/GaAs samples. The amount of residual strain at the interfaces was estimated to be 0.01% for the ZnTe/InP sample and -0.09% for the ZnTe/GaAs sample. Strong PL spectra for all ZnTe samples were observed from 80 to 300 K. High quality GaSb grown by MBE on ZnTe/GaSb (001) virtual substrates with a temperature ramp at the beginning of the GaSb growth has been demonstrated. High-resolution X-ray diffraction (XRD) showed clear Pendellösung thickness fringes from both GaSb and ZnTe epilayers. Cross-section TEM images showed excellent crystallinity and smooth morphology for both ZnTe/GaSb and GaSb/ZnTe interfaces. Plan-view TEM image revealed the presence of Lomer dislocations at the interfaces and threading dislocations in the top GaSb layer. The defect density was estimated to be ~1 x107/cm2. The PL spectra showed improved optical properties when using the GaSb transition layer grown on ZnTe with a temperature ramp. The structural properties of strain-balanced InAs/InAs1-xSbx SLs grown on GaSb (001) substrates by metalorganic chemical vapor deposition (MOCVD) and MBE, have been studied using XRD and TEM. Excellent structural quality of the InAs/InAs1-xSbx SLs grown by MOCVD has been demonstrated. Well-defined ordered-alloy structures within individual InAs1-xSbx layers were observed for samples grown by modulated MBE. However, the ordering disappeared when defects propagating through the SL layers appeared during growth. For samples grown by conventional MBE, high-resolution images revealed that interfaces for InAs1-xSbx grown on InAs layers were sharper than for InAs grown on InAs1-xSbx layers, most likely due to a Sb surfactant segregation effect.
Download or read book Compound Semiconductors Strained Layers and Devices written by Suresh Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.
Download or read book Optical Properties of II VI Semiconductor Materials and Superlattice Structures written by Tuyen K. Tran and published by . This book was released on 1996 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Optical Properties of Wide Gap II VI Low Dimensional Semiconductors written by T.C. McGill and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.
Download or read book Optical Properties of III V Semiconductors written by Heinz Kalt and published by Springer. This book was released on 2011-09-26 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.
Download or read book Optical Properties of Crystalline and Amorphous Semiconductors written by Sadao Adachi and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.
Download or read book Handbook on Physical Properties of Semiconductors written by Sadao Adachi and published by Springer Science & Business Media. This book was released on 2004-04-30 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this 3-volume reference is to present accurate, reliable and up-to-date information on the physical properties of group IV elemental semiconductors (Vol. 1), III-V compound semiconductors (Vol. 2) and II-VI semiconductors (Vol. 3). The data on the physical properties of each material are organized in the same way throughout these volumes to facilitate searching for information. The physical properties considered in these volumes can be classified into 12 groups: structural properties; -thermal properties; -elastic properties; -phonons and lattice vibronic properties; -collective effects and related properties; -energy-band structure: energy-band gaps; -energy-band structure: electron and hole effective mass; -electronic deformation potential; -electron affinity and Schottky barrier height; -optical properties; -elastooptic, electrooptic and nonlinear optical properties; and, -carrier transport properties. An extensive bibliography is included for those who wish to find additional information.
Download or read book III V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Download or read book Optical Properties of Selected II VI Semiconductor Compounds written by Yamina Lansari and published by . This book was released on 1986 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Properties of III V Semiconductors written by Heinz Kalt and published by Springer. This book was released on 1996 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on the implications of multi-valley bandstructures on the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. The discussion of the latter features is presented self-consistently with the dynamics of excitons and carriers resulting from intervalley coupling.
