Download or read book Statistical Experiment Design of the Reactive Ion Etching of Silicon and Silicon Dioxide with C2F6 CHF3 Plasmas written by Michael Paul Splichal and published by . This book was released on 1990 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Studies of the Effects of Fluorocarbon Deposition and Etching on Silicon and Silicon Dioxide Etching Processes Using CHF3 in an Inductively Coupled Plasma Reactor and the Development of a Reactive Ion Beam System for the Study of Plasma surface Interaction Mechanisms written by Neal R. Rueger and published by . This book was released on 1998 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Reaction Mechanisms for Modeling the Fluorocarbon Plasma Etch of Silicon Oxide and Related Materials written by and published by . This book was released on 2001 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that describe the gas-phase and surface chemistry occurring during the fluorocarbon plasma etching of silicon dioxide and related materials. The fluorocarbons examined are C2F6, CHF3 and C4F, while the materials studied are silicon dioxide, silicon, photoresist, and silica-based low-k dielectrics. These systems were examined at different levels, ranging from in-depth treatment of C2F6 plasma etch of oxide, to a fairly cursory examination of C4F etch of the low-k dielectric. Simulations using these reaction mechanisms and AURORA, a zero-dimensional model, compare favorably with etch rates measured in three different experimental reactors, plus extensive diagnostic absolute density measurements of electron and negative ions, relative density measurements of CF, CF2, SiF and SiF2 radicals, ion current densities, and mass spectrometric measurements of relative ion densities.

Download or read book The Journal of the Korean Physical Society written by and published by . This book was released on 2002 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Etching and Reactive Ion Etching written by J. W. Coburn and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Processing written by R. G. Frieser and published by . This book was released on 1981 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Etching for Integrated Silicon Sensor Applications written by Yuan Xiong Li and published by . This book was released on 1995 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reactive Ion Etching of Si SiO2 by CHF3 CH4 O2 Gas Mixture written by Usha Raghuram and published by . This book was released on 1993 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Particle Generation in Sputtering and Reactive Ion Etching of Silicon and Silicon Dioxide written by Won Jong Yoo and published by . This book was released on 1993 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Reactive Ion Etching of PECVD Silicon Dioxide SiO2 Layer for MEMS Application written by and published by . This book was released on 2004 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reactive ion etching (RIE) process has been developed to etch up to 1-micrometer (1 m) layer of low stress SiO2 (Silicon Dioxide) Plasma Enhanced Chemical Vapor Deposition (PECVD) film compatible for MEMS research applications. Etch rates from as low as 123 nm/min at 100 W to as high as 721 nm/min at 900 W powers were demonstrated using fluorocarbon (CF4) reactive gas plasma. RIE selectivity (SiO2/PR-Photoresist was 3:1 at 900W. The measured thickness variation was 0.13 m on 4-inch substrate for 1 m thick SiO2 film.

Download or read book Dry Etching Using NF3 Ar and NF3 He Plasmas written by J. Barkanic and published by . This book was released on 1984 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dry etching of silicon, silicon dioxide and photoresist has been studied using NF3 plasmas diluted with helium and argon in both reactive ion etch and plasma etch modes. NF3 concentrations in Ar and He ranged from 10 to 80% for these experiments. Power densities varied from 0.02 to 0.8W/cm2 and pressure from 15 to 500 ?m depending on the etching mode selected. Etch rates increased with power density in both PE and RIE modes. Si etch rates as high as 14800Å/min. were obtained with an 80% NF3/Ar mixture at 0.8W/cm2 and 500 ?m pressure. Oxide etch rates varied from 30 to 1500Å/min. depending on mode selected. Silicon over oxide selectivity tended to be higher for low power densities for all mixtures studied in either PE or RIE mode. Values obtained were ~ 30 to 40 for low power densities (0.12 W/cm2) and ~ 5 for the highest power density used. Selectivities were higher in PE than RIE mode. X-ray photoelectron spectroscopy analysis of etched Si, SiO2, and photoresist coated samples indicated that the surface layer had become fluorinated. Photoresist etch rates of ~ 500Å/min. were measured for positive photoresist etched in a 40% NF3/He plasma. Loading experiments indicated 10 and 13% decreases in Si and SiO2 etch rates respectively, as the area being etched doubled and, the uniformity of etch rate was approximately 7% over the entire batch.

Download or read book Plasma Etching Processes for CMOS Devices Realization written by Nicolas Posseme and published by Elsevier. This book was released on 2017-01-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Download or read book Reactive Ion Etching of SiO2 Using CHF3 CO2 Gas Mixture written by Anthony Hyunwoo Chung and published by . This book was released on 1997 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2626 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of SiO2 to Si Etching Selectivity in High Density Low Pressure Fluorocarbon Plasmas written by Karen Hildegard Ralston Kirmse and published by . This book was released on 1996 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dry Etching for VLSI written by A.J. van Roosmalen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.

Download or read book Magnetically Enhanced Reactive Ion Etching of Silicon in Pure Bromide Plasma written by Ahmed El-Masry and published by . This book was released on 1987 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: