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Book State of the Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors  Photonics and Electronics V

Download or read book State of the Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors Photonics and Electronics V written by H. M. Ng and published by The Electrochemical Society. This book was released on 2004 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Indium Nitride and Related Alloys

Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

Book Iii nitride Semiconductor Materials

Download or read book Iii nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a

Book Handbook of Nitride Semiconductors and Devices  Materials Properties  Physics and Growth

Download or read book Handbook of Nitride Semiconductors and Devices Materials Properties Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

Book Molecular Beam Epitaxial Growth and Characterization of the Manganese based Heusler Alloy Films for Application in Spintronics

Download or read book Molecular Beam Epitaxial Growth and Characterization of the Manganese based Heusler Alloy Films for Application in Spintronics written by Xuying Dong and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Journal of the Electrochemical Society

Download or read book Journal of the Electrochemical Society written by and published by . This book was released on 2004 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Dilute III V Nitride Semiconductors and Material Systems

Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Book Dilute III V Nitride Semiconductors and Material Systems

Download or read book Dilute III V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Book Physics of Wurtzite Nitrides and Oxides

Download or read book Physics of Wurtzite Nitrides and Oxides written by Bernard Gil and published by . This book was released on 2014-07-31 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Gallium Nitride and Related Materials  Volume 395

Download or read book Gallium Nitride and Related Materials Volume 395 written by R. D. Dupuis and published by Materials Research Society. This book was released on 1996-09-04 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.

Book The Physics of Semiconductor Devices

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Book Integrated Electronics on Aluminum Nitride

Download or read book Integrated Electronics on Aluminum Nitride written by Reet Chaudhuri and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

Book Electronic Properties of Materials

Download or read book Electronic Properties of Materials written by Rolf E. Hummel and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book on electrical, optical, magnetic and thermal properties of materials is in many aspects different from other introductory texts in solid state physics. First of all, this book is written for engineers, particularly materials and electrical engineers who want to gain a fundamental under standing of semiconductor devices, magnetic materials, lasers, alloys, etc. Second, it stresses concepts rather than mathematical formalism, which should make the presentation relatively easy to understand. Thus, this book provides a thorough preparation for advanced texts, monographs, or special ized journal articles. Third, this book is not an encyclopedia. The selection oftopics is restricted to material which is considered to be essential and which can be covered in a 15-week semester course. For those professors who want to teach a two-semester course, supplemental topics can be found which deepen the understanding. (These sections are marked by an asterisk [*]. ) Fourth, the present text leaves the teaching of crystallography, X-ray diffrac tion, diffusion, lattice defects, etc. , to those courses which specialize in these subjects. As a rule, engineering students learn this material at the beginning of their upper division curriculum. The reader is, however, reminded of some of these topics whenever the need arises. Fifth, this book is distinctly divided into five self-contained parts which may be read independently.

Book 4th International Conference on Nanotechnologies and Biomedical Engineering

Download or read book 4th International Conference on Nanotechnologies and Biomedical Engineering written by Ion Tiginyanu and published by Springer Nature. This book was released on 2019-09-17 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers the proceedings of the 4th International Conference on Nanotechnologies and Biomedical Engineering, held on September 18-21, 2019, in Chisinau, Republic of Moldova. It continues the tradition of the previous conference proceedings, thus reporting on both fundamental and applied research at the interface between nanotechnologies and biomedical engineering. Topics include: developments in bio-micro/nanotechnologies and devices; biomedical signal processing; biomedical imaging; biomaterials for biomedical applications; biomimetics; bioinformatics and e-health, and advances in a number of related areas. The book offers a timely snapshot of cutting-edge, multidisciplinary research and developments in the field of biomedical and nano-engineering.

Book Laser Radar

    Book Details:
  • Author : National Research Council
  • Publisher : National Academies Press
  • Release : 2014-03-14
  • ISBN : 0309302196
  • Pages : 321 pages

Download or read book Laser Radar written by National Research Council and published by National Academies Press. This book was released on 2014-03-14 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: In today's world, the range of technologies with the potential to threaten the security of U.S. military forces is extremely broad. These include developments in explosive materials, sensors, control systems, robotics, satellite systems, and computing power, to name just a few. Such technologies have not only enhanced the capabilities of U.S. military forces, but also offer enhanced offensive capabilities to potential adversaries - either directly through the development of more sophisticated weapons, or more indirectly through opportunities for interrupting the function of defensive U.S. military systems. Passive and active electro-optical (EO) sensing technologies are prime examples. Laser Radar considers the potential of active EO technologies to create surprise; i.e., systems that use a source of visible or infrared light to interrogate a target in combination with sensitive detectors and processors to analyze the returned light. The addition of an interrogating light source to the system adds rich new phenomenologies that enable new capabilities to be explored. This report evaluates the fundamental, physical limits to active EO sensor technologies with potential military utility; identifies key technologies that may help overcome the impediments within a 5-10 year timeframe; considers the pros and cons of implementing each existing or emerging technology; and evaluates the potential uses of active EO sensing technologies, including 3D mapping and multi-discriminate laser radar technologies.

Book Antimonide based Infrared Detectors

Download or read book Antimonide based Infrared Detectors written by Antoni Rogalski and published by . This book was released on 2018 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--