Download or read book Future Energy Conferences and Symposia written by and published by . This book was released on 1989 with total page 838 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vertical Cavity Surface Emitting Lasers written by Carl W. Wilmsen and published by Cambridge University Press. This book was released on 2001-11-12 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 1999, provides a comprehensive description of the physics, design, fabrication, characterization, and applications of vertical-cavity surface-emitting lasers.

Download or read book Hydride vapour phase epitaxy growth crystal properties and dopant incorporation in gallium nitride written by Patrick Hofmann and published by BoD – Books on Demand. This book was released on 2018-08-15 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully before the germanium doping is employed to the GaN growth. The focus lies on the homogeneity of the germanium doping and it is compared compared to the silicon doping and the vapour phase doping line. Benefits and drawbacks are discussed in conjunction with the obtained results. The germanium doping via solid state doping line is applied to the HVPE GaN growth process to measure accurately growth process related properties unique to the applied set of GaN growth parameters.

Download or read book Handbook of Crystal Growth written by Tatau Nishinaga and published by Elsevier. This book was released on 2014-11-04 with total page 1216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) and III (Thin Film Growth and Epitaxy). Volume IA highlights thermodynamics and kinetics. After historical introduction of the crystal growth, phase equilibria, defect thermodynamics, stoichiometry, and shape of crystal and structure of melt are described. Then, the most fundamental and basic aspects of crystal growth are presented, along with the theories of nucleation and growth kinetics. In addition, the simulations of crystal growth by Monte Carlo, ab initio-based approach and colloidal assembly are thoroughly investigated. Volume IBHandbook of Crystal Growth, 2nd Edition (Fundamentals: Transport and Stability) Volume IB discusses pattern formation, a typical problem in crystal growth. In addition, an introduction to morphological stability is given and the phase-field model is explained with comparison to experiments. The field of nanocrystal growth is rapidly expanding and here the growth from vapor is presented as an example. For the advancement of life science, the crystal growth of protein and other biological molecules is indispensable and biological crystallization in nature gives many hints for their crystal growth. Another subject discussed is pharmaceutical crystal growth. To understand the crystal growth, in situ observation is extremely powerful. The observation techniques are demonstrated. Volume IA - Explores phase equilibria, defect thermodynamics of Si, stoichiometry of oxides and atomistic structure of melt and alloys - Explains basic ideas to understand crystal growth, equilibrium shape of crystal, rough-smooth transition of step and surface, nucleation and growth mechanisms - Focuses on simulation of crystal growth by classical Monte Carlo, ab-initio based quantum mechanical approach, kinetic Monte Carlo and phase field model. Controlled colloidal assembly is presented as an experimental model for crystal growth. Volume IIB - Describes morphological stability theory and phase-field model and comparison to experiments of dendritic growth - Presents nanocrystal growth in vapor as well as protein crystal growth and biological crystallization - Interprets mass production of pharmaceutical crystals to be understood as ordinary crystal growth and explains crystallization of chiral molecules - Demonstrates in situ observation of crystal growth in vapor, solution and melt on the ground and in space

Download or read book Proceedings in Print written by and published by . This book was released on 1996 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Texas Instruments Technical Journal written by and published by . This book was released on 1993 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Solid State Research written by Lincoln Laboratory and published by . This book was released on 2001 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High TC Update written by and published by . This book was released on 1993 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Frontiers In Electronics Future Chips Proceedings Of The 2002 Workshop On Frontiers In Electronics Wofe 02 written by Yoon Soo Park and published by World Scientific. This book was released on 2003-01-29 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.

Download or read book CIM Bulletin written by Canadian Institute of Mining and Metallurgy and published by . This book was released on 2001 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Applied Science Technology Index written by and published by . This book was released on 2000 with total page 1688 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Type II W Quantum Wells for Mid infrared Emission written by Juno Yu-Ting Huang and published by . This book was released on 2008 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of GaInAsP on GaAs Using Flow Modulation Epitaxy written by Bobby Lee Pitts and published by . This book was released on 1994 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quarterly Bulletin of the Canadian Mining Institute written by Canadian Institute of Mining, Metallurgy and Petroleum and published by . This book was released on 1996 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1997 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Twenty ninth Annual Report on Materials Research at Stanford University written by Stanford University. Center for Materials Research and published by . This book was released on 1990 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1997 IEEE International Symposium on Compound Semiconductors written by Mike Melloch and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1998 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text focuses on the conductive characteristics of crystalline compounds, including the topics: GaN and compliant substrates; optical characterization; heterostructure transistors; quantum dots; visible emitters; GaN and related compounds; and passivation and growth issues in GaAs."