Download or read book Silicon Surface Chemistry in Aqueous Solutions Studied with a Novel Scanning Tunneling Microscope written by Christopher Paul Wade and published by . This book was released on 1998 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scanning Tunneling Microscopy and Computational Chemistry Studies for Controlled Reactions on Silicon written by Dimitri B. Skliar and published by ProQuest. This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The understanding of the chemistry of silicon surfaces has been one of the major contributors in development and improvement of silicon based microelectronic devices in the past several decades. Progressively, the dimensions of devices have reduced by several orders of magnitude, presently at the length scale of few tens of nanometers, and are expected to decrease in size even more. For chemistry based film growth methods such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), control of film structure and composition in this spatial regime requires a very detailed nanoscopic understanding of silicon surface chemistry. A combined experimental and theoretical approach, utilizing ultra high vacuum scanning tunneling microscopy (UHV-STM) and density functional theory (DFT), to understanding the surface chemistry of Si(100) is illustrated in the context of ALD development for high dielectric constant metal oxides. As a first possible route to controllably deposit monolayer thick metal layer, the reaction of the metal-organic molecule with bare silicon surface is considered. The interaction of the protonated b-diketonate ligand, 2,2,6,6-tetramethyl-3,5-heptanedione (dpmH), which is a byproduct of the strontium metal-organic precursor vaporization, with Si(100)-2x1 surface is investigated. Two aspects of the molecule's interactions were addressed: the adsorption at room temperature as well as its thermal decomposition. By combination of the experiments with DFT calculations of adsorbate geometry, STM image simulations, and reaction pathways it was possible to propose unique binding configurations that match the experimentally observed adsorption features. Theoretical analysis of multiple competing reaction pathways showed that hydroxyl dissociation via a 1,7 H-shift mechanism is the dominant adsorption pathway. Several other pathways including [2+4] addition, [2+2] C=O intra-dimer addition, [2+2] C=O intra-dimer addition with OH dissociation on an adjacent dimer, [2+2] C=C intra-dimer addition, and "ene" addition are found to be barrierless with respect to the entrance channel, and have small barriers relative to a hypothesized adsorption precursor intermediate. Pathways involving 1,3 and 1,2 intra-molecular H-shifts are found to be highly activated and are expected to be inaccessible at room temperature. Several state inter-conversions are found to be unlikely as well. These results provide insight to the competitive adsorption pathways for multifunctional molecules on silicon. Investigations of thermally induced decomposition of adsorbed dpmH molecules showed that there are no significant products of desorption of carbon containing fragments of the molecule, i.e. most of the carbon atoms incorporate into the silicon surface causing it to reconstruct to a c(4x4) phase at exposures below ~ 0.15 L. At higher exposures formation of SiC islands is observed. These findings demonstrate that schemes to deposit materials from organometallic compounds containing b-diketone ligands onto clean Si(100)-2x1 surface cannot result in an ordered interfacial structure as carbon incorporation into the substrate is inevitable. An alternative strategy for depositing metal template layer is proposed, where the initial reacting surface will be terminated by water at room temperature. The stability of surface hydroxyl groups and mechanisms of their decomposition in 300-600K temperature range are analyzed. It is found that surface oxidation does not follow first order kinetics with respect to the hydroxyl groups. DFT calculations of oxygen insertion pathways point towards a catalytic effect of the dangling bonds and suggest that in the 500-550K range the insertion events should occur predominantly next to unoccupied surface silicon sites. A model is proposed, where diffusing dangling bonds act as moving catalysts for hydroxyl group decomposition. Kinetic Monte Carlo (kMC) simulations are used to compare the results of this model with experimental data. A strategy to increase hydroxyl group stability is demonstrated where the initial concentration of surface dangling bonds is decreased by water termination at 130K.
Download or read book Atomic Scale Chemistry on Silicon Surfaces Studied with a Variable Temperature Scanning Tunneling Microscope written by Mohammad Ali Rezaei and published by . This book was released on 1998 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic Scale Chemistry on Silicon Surfaces Studies with a Variable Temperature Scanning Tunneling Microscope written by Mohammad Ali Rezaei and published by . This book was released on 1998 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Surface Chemistry Studied by Infrared Spectroscopy written by Huihong Luo and published by . This book was released on 1998 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Porous Solids VI written by and published by Elsevier. This book was released on 2002-11-14 with total page 809 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains 99 of the papers that were presented at the 6th in the series of Symposia on Characterization of Porous Solids held in Alicante, Spain, May 2002. Written by leading international specialists in the subject, the contributions represent an up-to-date and authoritative account of recent developments around the world in the major methods used to characterize porous solids. The book is a useful work of reference for anyone interested in characterizing porous solids, such as MCM-41 mesoporous materials, pillared clays, etc. Papers on pore structure determination using gas adsorption feature strongly, together with papers on small angle scattering methods, mercury porosimetry, microcalorimetry, scanning probe microscopies, and image analysis.
Download or read book Silicon Surface Structures and Homoepitaxy Studied by Scanning Tunneling Microscopy written by Zhaohui Zhang and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Exploring Silicon Surface Chemistry with Sepctroscopy and Microscopy written by Fan Zheng and published by . This book was released on 2008 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1988 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Elucidation of the Mechanism of the Initial Stages of Si 111 7x7 Oxidation Using Scanning Tunneling Microscopy written by Ph Avouris and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: The capability of the scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the topography and electronic structure of surfaces and adsorbate layers with atomic resoLution makes it a powerful took in the study of surface chemistry. Here we use STM, STS, ultraviolet photoemission spectroscopy (LIPS) and electronic structure calculations to study the long-standing problem involving the nature of the initial stages of the oxidation of silicon. There have been a large number of studies on this issue utilizing a great variety of techniques. However, not only is the mechanism of oxidation still unclear, but there is not even agreement on what kind of product(s) is formed. Several different configurations have been proposed for the oxygen-containing sites in the early stages of the reaction. They involve oxygen atoms saturating the dangling-bonds of top-layer Si atoms, oxygen atoms inserted in back-bonds but leaving the dangling-bonds intact, or molecular forms of oxygen attached to surface atoms or bridging two surface Si atoms.
Download or read book Growth and Surface Reconstructions of Metals on the Si 001 and Si 111 Surfaces Studied Using Scanning Tunneling Microscopy written by Xue-Feng Lin and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Annual Commencement written by Stanford University and published by . This book was released on 1996 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Chemistry of Silicon written by Yosuke Kanai and published by . This book was released on 2006 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Surface Chemistry written by Jaime Lauren Petrus and published by . This book was released on 1998 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 2000 International Chemical Congress of Pacific Basin Societies written by and published by . This book was released on 2000 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
