Download or read book Oxidation of Tungsten written by Vincent David Barth and published by . This book was released on 1961 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report presents a detailed review of available information on the oxidation of W and its alloys. W is relatively inert below 700 C. As the temperature is increased above this level, however, oxidation becomes progressively more rapid, reaching catastrophic rates at temperatures around 1200 C and above. Various theories for the mechanism and rates of W oxidation at different temperatures are reviewed, and the effect of pressure and water vapor on the stability of W oxides is discussed in detail. The elevatedtemperature reactions of W with other materials, such as refractory oxides, and with gases other than oxygen also are covered. Information on the protection of W by alloying and coating is included. (Author).
Download or read book Simulation Methods for ESD Protection Development written by Harald Gossner and published by Elsevier. This book was released on 2003-10-16 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Simulation Methods for ESD Protection Development looks at the integration of new techniques into a comprehensive development flow, which is now available due advances made in the field during the recent years. These findings allow for an early, stable ESD concept at a very early stage of the technology development, which is essential now development cycles have been reduced. The book also offers ways of increasing the optimization and control of the technology concerning performance, thus making the process more cost effective and increasingly efficient. This title provides a guide through the latest research and technology presenting the ESD protection development methodology. This is based on a combination of process, device and circuit stimulation, and addresses the optimization of the industry critical issue, reduced development cycles.Written to address the needs of the ESD engineer, this text is required reading by all industry practitioners and researchers and students within this field. - The FIRST Extensive overview on the subject of ESD simulation - Addresses the industry critical issue of reduced development cycles, and provides solutions - Presents the latest research in the field with high practical relevance and its results
Download or read book Simulative Investigation of Post Oxidation in the Exhaust Manifold of SI Engines written by Jan Przewlocki and published by Springer Nature. This book was released on 2021-12-08 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Jan Przewlocki provides a deep insight into the post-oxidation processes in an exhaust manifold of an SI engine. Besides the evaluation of 3D-CFD simulation results, tools are developed to evaluate them in a target-oriented way. In addition, a 1D post-oxidation simulation model was developed that is capable of reliably predicting post-oxidation effects within the exhaust manifold. This study shows the development process of the 1D model approach and elaborates its strengths and weaknesses.
Download or read book Simulation of Semiconductor Processes and Devices 1998 written by Kristin De Meyer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Download or read book Integrated Power Devices and TCAD Simulation written by Yue Fu and published by CRC Press. This book was released on 2014-01-23 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Download or read book SiGe materials Processing and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide and Related Materials 2018 written by Peter M. Gammon and published by Trans Tech Publications Ltd. This book was released on 2019-07-19 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Download or read book JJAP written by and published by . This book was released on 2003 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Processing of Semiconductors written by P.F. Williams and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.
Download or read book Silicon Integrated Circuits written by Dawon Kahng and published by Academic Press. This book was released on 2013-10-22 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams. The second chapter is concerned with the use of electron cyclotron resonance plasmas in two important materials processing techniques: reactive ion-beam etching and plasma deposition. The last chapter of the book deals with the exploding area of very large scale integration processing and process simulation. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
Download or read book Silicon Devices and Process Integration written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2009-01-09 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Download or read book Micro System Technologies 90 written by Herbert Reichl and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: On September 10-13, 1990, the first international meeting on Microsystem Technologies takes place at the Berlin International Congress Center. Most of the traditional congresses deal with themes that become more and more specific, and only a small part of the scientific world is reflected. The Micro System Technologies is attempting to take the opposite direction: During the last two decades the development of microelectronics was characterized by a tremendous increase of complexity of integrated circuits. At the same time the fields of microoptics and micromechanics have been developed to an advanced state of the art by the application of thin film and semiconductor technologies. The trend of the future development is to increase the integration density by combining the microelectronic, microoptic, and micro mechanic aspects to new complex multifunctional systems, which are able to comprise sensors, actuators, analogue and digital circuits on the same chip or on multichip-modules. Microsystems will lead to extensions of the field of microelectronic applications with important technical alterations and can open new considerable markets. For the realization of economical solutions for microsystems a lot of interdisciplinary cooperation and know-how has to be developed. New materials for sensitive layers, substrates, conducting, semiconducting, or isolating thin films are the basis for the development of new technologies. The increasing complexity leads to increasing interaction among electrical and non-electrical quantities.
Download or read book Silicon Technologies written by Annie Baudrant and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
