Download or read book Silicon Carbide and Related Materials 2017 written by Robert Stahlbush and published by . This book was released on 2018 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2017 written by Philip Neudeck and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection of papers by the results of the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017, September 17-22 in Washington, DC, USA) presents for readers the latest progress in the field of development and production of silicon carbide semiconductors and their application in the power electronic devices. Silicon Carbide, Semiconductors, Bulk and Epitaxial Growth, Surface Defects, Properties, Processing, MOS and MOSFET Structures, Power Devices, Circuits, Applications Materials Science.

Download or read book Silicon Carbide and Related Materials 2017 written by Robert Stahlbush and published by Trans Tech Publications Ltd. This book was released on 2018-06-05 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt: ICSCRM 2017 Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA

Download or read book Silicon Carbide and Related Materials 2016 written by Konstantinos Zekentes and published by Trans Tech Publications Ltd. This book was released on 2017-05-15 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece

Download or read book Silicon Carbide and Related Materials 2013 written by Hajime Okumura and published by Trans Tech Publications Ltd. This book was released on 2014-02-26 with total page 1246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.

Download or read book Silicon Carbide and Related Materials 2019 written by Hiroshi Yano and published by Trans Tech Publications Ltd. This book was released on 2020-07-28 with total page 1196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan

Download or read book Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 2000 with total page 1684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 1999 written by Calvin H. Carter Jr. and published by Trans Tech Publications Ltd. This book was released on 2000-05-10 with total page 1786 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

Download or read book Materials for Electronics Silicon Carbide and Related Materials written by Min Lu and published by Trans Tech Publications Ltd. This book was released on 2020-11-16 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed full text papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019) Selected peer-reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China

Download or read book Silicon carbide and related materials 1999 ICSCRM 99 proceedings of the International Conference on Silicon Carbide and Related Materials 1999 Research Triangle Park North Carolina USA October 10 15 1999 1 2000 written by Calvin H. Carter and published by . This book was released on 2000 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina. The growth of this biennial international conference to over 650 participants from 25 countries attests to the rapidly increasing interest in large bandgap semiconductors in both academia and industry. These volumes contain 401 papers, 19 of which were invited. The principal topics organized as chapters are: 1) SiC bulk growth, 2) SiC epitaxy and thin film growth, 3) physical properties of SiC (structure, surfaces and interfaces, optical and electrical properties, and magnetic resonance), 4) processing of SiC, 5) SiC devices, 6) growth of III-Nitrides and related materials, 6) physical properties of III-Nitrides, and 8) III-Nitrides: processing and devices.

Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by . This book was released on 2002 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. This two-volume edition records the written versions of 364 contributed papers and 26 invited talks, presented at the Tenth International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), held in Lyon, France, from the 5th to the 10th October, 2003. A total of 19 different countries were represented. These proceedings give the latest overview of the fundamental topics which currently drive the development of a competitive SiC technology. They cover bulk and epitaxial growth, the properties of the resultant substrates and layers, and the processing issues involved in developing SiC electronic devices applications.

Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 1670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Download or read book Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 2000 with total page 1684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2015 written by Fabrizio Roccaforte and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.The papers are grouped as follows:Chapter 1: SiC GrowthChapter 2: SiC Theory and CharacterizationChapter 3: SiC ProcessingChapter 4: SiC DevicesChapter 5: Related Materials Silicon Carbide, Wide Bandgap Semiconductor, Bulk Growth of SIC, Epitaxial Growth of SIC, Processing of SIC, SIC Devices, Power Electronics, MOS, Characterization, Graphene, III-Nitrides Materials Science.

Download or read book Silicon Carbide and Related Materials 2012 written by Alexander A. Lebedev and published by Trans Tech Publications Ltd. This book was released on 2013-01-25 with total page 1200 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from “Bulk growth” to “Device and application”. The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition.

Download or read book Semiconductors Silicon Carbide and Related Materials written by Min Lu and published by Trans Tech Publications Ltd. This book was released on 2019-05-17 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) Selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China

Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications Ltd. This book was released on 2004-06-15 with total page 1548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).