Download or read book Silicon and Silicide Nanowires written by Yu Huang and published by CRC Press. This book was released on 2016-04-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

Download or read book Silicon and Silicide Nanowires written by Yu Huang and published by . This book was released on 2013 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications.

Download or read book Rare Earth Silicide Nanowires on Silicon Surfaces written by Martina Wanke and published by . This book was released on 2008 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Silicide Nanowires for Nanoscale Contacts and Polycrystalline Silicon Thin Films for Solar Cells by Metal induced Growth written by and published by . This book was released on 2006 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanoscale Contact Engineering for Si Silicide Nanowire Devices written by Yung-Chen Lin and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ∼28.6 μΩ*cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on MnSi nanowire shows an abrupt resistance reduction due to the spin ordering at ~29.7 K.A negative magnetoresistance (MR) ~1.8% under 5 Tesla at 1.6 K is achieved, demonstrating the ferromagnetic behavior of MnSi. Furthermore, using the MnSi/p-Si/MnSi heterostructure, we have studied the charge injection at various temperatures via the Schottky barrier, and the spin scattering was observed through magnetotransport studies of MnSi/p-Si/MnSi heterojunction. Our results represent the first report of magnetic contact fabrication through the formation of single crystal heterojunction nanowires and the first demonstration of spin injection and detection in such Si nanowire devices. The magnetic silicides approach thus opens a new pathway to create ferromagnetic/semiconductor junction with clean and sharp interface, and maysignificantly impact the future of spintronics. Beyond those applications, silicide phase control at nanoscale is investigated. Three nickel phases, Ni31Si12, Ni2Si and NiSi2 are observed in one step annealing at 550 oC. NiSi2 grows initially through the Si NW and then the area close to nickel pad transforms into the nickel-rich phase, Ni31Si12. With prolonged annealing over 5 minutes, the Ni2Si starts to show up in between Ni31Si12 and NiSi2. The growth sequence is different from the thin film system where Ni2Si usually appears as the initial phase in the beginning as the annealing temperature is higher than 400 oC. Interfacial energy differences and surface free energy are believed to play an important role here at the nanoscale, which lead to the formation of normally unfavorable silicide phases in Si NWs. In addition, Si/SiOx core/shell NW structure is used to explore the phase transformation of silicides in the structure-confined nano environment. Nickel silicides in the structure-confined core/shell Si NW shares the similar phase formation sequences as those appeared in the bared SiNWs, while the growth rate is significantly retarded. This may be attributed to the high compressive stress built-in in the core/shell NW structure that retards the diffusion of the nickel atom as well as limits the volume expansion of the metal-rich phases. As a result, the high stress at this finite scale hinders the continuous growth of Ni31Si12 into the core/shell NWs and totally eliminates the formation of Ni2Si in core/shell NWs with thick oxide shells (~ 50 nm). Through these studies, we have demonstrated first time the phase formation sequences of nickel silicides in Si and Si/SiOx NW structures, which is of great importance for reliable contact engineering for Si NW devices. Furthermore, we have provided a clear picture of the hindered nickel silicide growth in confined nanoscale environment and showed the deviated behavior of silicides growth under stress. The information rendered here will be useful for Si NW device applications as well as for the silicon device engineering at nanoscale in general. To further investigate the oxide shell effect, Mn5Si3 and Fe5Ge3 NW were grown within various oxide thickness to explore the nucleation and growth in the nanowire structure. A oxide shell exerted a compressive stress on the silicide or germanide materials will make those materials with single-crystal properties. Interestingly, single-crystal growth of contact materials can be also implemented for germanide materials. The iron-rich germanide, Fe5Ge3, was successfully grown with single-crystal properties. It shows ferromagnetic properties with a Curie temperature above the room temperature verified by magnetic force microscope (MFM). Two different epitaxial relations found at germanide/germanium interface due to the different sizes of the germanium NW templates. These two different crystal structures exhibited magnetic anisotropy in magnetic force microscope (MFM) measurement, showing differently preferred domain orientations. In-plane and out-of-plane magnetization in the Fe5Ge3 NWs are observed in our experiment. The crystal orientation or engineering stress may have influence on the magnetic domain structure. This ferromagnetic contact material may open the way for spintronics to grow the magnetic materials on the semiconducting materials and control the direction of magnetization in the future. Those silicide studies indicated silicide metal-heterojunction field effect transistor has excellent device performance. In addition, Si channel region can be shrunk to less than 10 nm and also keep semiconducting properties without high leakage current. This approach has the potential for future nanoelectronics. However, silicide phase transformation shows a deviated behavior from the studies in bulk system. It may be associated with stress effect or nucleation behavior at nanosclae, leading the different formation phase or sequence. For those interesting phenomena, it has attracted more and more attention and may gain more insight studies in the near future.

Download or read book Flash Lamp Annealing written by Lars Rebohle and published by . This book was released on 2019 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.

Download or read book Kinetic Competition Growth Mechanism and Phase Manipulation of Silicide Nanowires in Solid State Reaction written by Yu Chen and published by . This book was released on 2014 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first phase selection and the phase formation sequence between metal and silicon (Si) couples are indispensably significant to microelectronics. With increasing scaling of device dimension to nano regime, established thermodynamic models in bulk and thin film fail to apply in one dimensional (1-D) nanostructures. Herein, we use a kinetic competition model to explain the phase formation sequence of 1-D nickel (Ni) silicides: multiple Ni silicides coexist at the initial stage and then the fastest one wins out as the first phase in a following growth competition. With kinetic parameters extracted from in-situ transmission electron microscope (TEM) observations, we quantitatively explain the unique size dependant first phase formation and the phase formation sequence changes in 1-D structures. We can further control the first phase by selectively enhancing or suppressing the growth rate of silicides through template structure modifications. Growth rate diffusion limited phases can be greatly enhanced in a porous Si nanowire (NW) template due to short diffusion paths. On the other hand, a thick aluminum oxide (Al2O3) shell around the NW is applied to impede the growth of large volume diffusion limited phases including Ni31Si12, [delta]-Ni2Si and [theta]-Ni2Si. Moreover, a thin platinum (Pt) interlayer between Si and Ni is used to suppress the nucleation of NiSi2. Together, with the thick shell and Pt interlayer, we can suppress all competing silicides and render slow growing NiSi to form as the first phase. The resistivity of Pt doped NiSi (denoted as Ni(Pt)Si) NW are found compatible to pure NiSi from a two terminal and four terminal measurement. Controlled formation of Ni31Si12, [delta]-Ni2Si, [theta]-Ni2Si, NiSi or NiSi2 as the first phase has also been achieved. To examine the kinetic competition model, 1-D cobalt (Co) and palladium (Pd) silicide formations are also studied and analyzed kinetically. A thick shell is found effective to suppress the Pd silicide NW broken at the interface.

Download or read book Silicide Technology for Integrated Circuits written by Institution of Electrical Engineers and published by IET. This book was released on 2004-12-21 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to provide guidance on the development and application of metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages. Other key topics covered are fundamentals, present and future silicide technology for Si-based devices, and characterisation methods. Suitable for engineers and students in microelectronics.

Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.

Download or read book Silicide and Germanide Contacts to Silicon and Germanium Nanowires written by Nicholas S. Dellas and published by . This book was released on 2011 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nucleation and Growth of Nanoscale Metal Silicides in Nanowires of Silicon written by Yi-Chia Chou and published by . This book was released on 2010 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rare earth Silicide Nanostructure Epitaxial Growth and Crystallography written by Gangfeng Ye and published by . This book was released on 2006 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon based Nanomaterials written by Handong Li and published by Springer Science & Business Media. This book was released on 2013-10-02 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of nanomaterials have excellent optoelectronic and electronic properties for novel device applications. At the same time, and with advances in silicon integrated circuit (IC) techniques, compatible Si-based nanomaterials hold promise of applying the advantages of nanomaterials to the conventional IC industry. This book focuses not only on silicon nanomaterials, but also summarizes up-to-date developments in the integration of non-silicon nanomaterials on silicon. The book showcases the work of leading researchers from around the world who address such key questions as: Which silicon nanomaterials can give the desired optical, electrical, and structural properties, and how are they prepared? What nanomaterials can be integrated on to a silicon substrate and how is this accomplished? What Si-based nanomaterials may bring a breakthrough in this field? These questions address the practical issues associated with the development of nanomaterial-based devices in applications areas such as solar cells, luminous devices for optical communication (detectors, lasers), and high mobility transistors. Investigation of silicon-based nanostructures is of great importance to make full use of nanomaterials for device applications. Readers will receive a comprehensive view of Si-based nanomaterials, which will hopefully stimulate interest in developing novel nanostructures or techniques to satisfy the requirements of high performance device applications. The goal is to make nanomaterials the main constituents of the high performance devices of the future.

Download or read book Structural and Electronic Properties of Rare Earth Silicides on Si 001 written by Chigusa Ohbuchi and published by . This book was released on 2004 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanowires written by Nicoleta Lupu and published by BoD – Books on Demand. This book was released on 2010-02-01 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes nanowires fabrication and their potential applications, both as standing alone or complementing carbon nanotubes and polymers. Understanding the design and working principles of nanowires described here, requires a multidisciplinary background of physics, chemistry, materials science, electrical and optoelectronics engineering, bioengineering, etc. This book is organized in eighteen chapters. In the first chapters, some considerations concerning the preparation of metallic and semiconductor nanowires are presented. Then, combinations of nanowires and carbon nanotubes are described and their properties connected with possible applications. After that, some polymer nanowires single or complementing metallic nanowires are reported. A new family of nanowires, the photoferroelectric ones, is presented in connection with their possible applications in non-volatile memory devices. Finally, some applications of nanowires in Magnetic Resonance Imaging, photoluminescence, light sensing and field-effect transistors are described. The book offers new insights, solutions and ideas for the design of efficient nanowires and applications. While not pretending to be comprehensive, its wide coverage might be appropriate not only for researchers but also for experienced technical professionals.

Download or read book Nanowire Electronics written by Guozhen Shen and published by Springer. This book was released on 2018-11-23 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.

Download or read book Ni Silicide Contacts written by Mike El Kousseifi and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis focuses on the phenomena that occur during the reaction between metal and silicon (silicide) on thin films and nanowires. Indeed, phenomena such as nucleation, lateral growth, normal growth and diffusion must be understood to make contacts for future microelectronic devices. The comparison between the silicide formation on thin films and nanowires is one of the main aspects of this work. Atomic distribution in 3D for the elements in different Ni silicide phase was obtained by atom probe tomography (APT). To enable the analysis of different types of silicon nanowires by APT, several original methods for sample preparation by focused ion beam has been developed and tested. On the other hand, in situ and real-time analysis by X-ray diffraction during the reactive diffusion helped to highlight the importance of the nucleation of a phase and to determine the kinetics of formation of Ni(Pt) silicides, including the reaction on the interfaces and the lateral growth. The characteristic shape associated with the lateral growth was determined by ex-situ transmission electron microscopy analyzes and was compared with the existing theoretical models. Moreover, the determination of the fastest diffusing species by APT provided information on the mechanisms of phase formation and stress relaxation in the silicide.