Download or read book Self diffusion in Indium Antimonide and Gallium Antimonide written by Fred Henry Eisen and published by . This book was released on 1956 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion in III V Compounds with Particular Reference to Self diffusion in Indium Antimonide written by Don Leslie Kendall and published by . This book was released on 1965 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Self and Zinc Diffusion in Gallium Antimonide written by Samuel Piers Nicols and published by . This book was released on 2002 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Self and Zinc Diffusion in Gallium Antimonide written by and published by . This book was released on 2002 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

Download or read book Bibliography on Diffusion of Impurity Elements in Compound Semiconductors written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1961 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study of the literature pertaining to solid state diffusion in compound semiconductors has been made as a preliminary step to a research project in this area. The resulting bibliography is given in the hope that it may be useful to other workers interested in this subject. While no claim is made that the listings are exhaustive, it is believed that the more important publications are included. This is a relatively new field of research with many interesting problems in need of solution. (Author).

Download or read book III V Semiconducting Compounds written by M. Neuberger and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these III·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consis tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speci fications. These latter include the carrier concentration and the dopant.

Download or read book Indium Antimonide Data Sheets written by M. Neuberger and published by . This book was released on 1963 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effect of Surface Preparation on the Diffusion Process in Indium Antimonide written by Richard Wayne Smith and published by . This book was released on 1966 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Surfaces and Interfaces II written by John Burke and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Army Materials and Mechanics Research Center has conducted the Sagamore Army Materials Research Conferences, in cooperation with the Metallurgical Research Laboratories of the Department of Chemical Engineering and Metallurgy of Syracuse University, since 1954. The purpose of the conferences has been to gather together scientists and engineers from academic institutions, industry, and government who are uniquely qualified to explore in depth a subject of importance to the Army, the Department of Defense and the scientific corr.munity. This volume, Surfaces and Interfaces ll: Physical and Mechanical Properties, can be considered a continuation, or perhaps an extension, of the information contained in Surfaces and Interfaces I: Chemical and Physical Characteristics. The emphasis in this volume is focused on: the technological significance of surfaces and interfaces; surface sensitive mechanical properties; environment-sensitive properties; control of grain structure; and composite materials. It is felt that the rather ambitious undertaking of the program committee to place the role of "surfaces and interfaces" in its proper context has been achieved. The balance between basic research findings and more applied research allows the reader a certain degree of latitude in the use of the two volumes. The continued active interest and support of these conferences by Col. C. T. Riordan, Commanding Officer, Dr. E. Scala, Technical Di rector, and J. F. Sullivan, Deputy Technical Director, of the Army Materials and Mechanics Research Center is appreciated.

Download or read book Solid State Technology written by and published by . This book was released on 1968 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion of Iron in Indium Antimonide written by Harold Peter Thomas and published by . This book was released on 1963 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion of Cadmium in Indium Antimonide written by Roger William Orth and published by . This book was released on 1963 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Diffusion of Silver and Cobalt in Indium Antimonide written by Wen Shuh Chen and published by . This book was released on 1961 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Anisotropy in the Diffusion of Cadmium in Indium Antimonide written by Theodore Nathan Thwing and published by . This book was released on 1967 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation enhanced Diffusion of Sulfur in Indium Antimonide written by Thomas Reiner and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: