Download or read book Self assembled Growth and Optical Properties of ZnTe ZnCdSe Quantum Dots written by Wu-Ching Chou and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Properties of Thermally Annealed ZnTe Zn1 XMgXSe Self assembled Quantum Dots Grown by Molecular Beam Epitaxy written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical and Electrical Properties of Single Self Assembled Quantum Dots in Lateral Electric Fields written by Malte Huck and published by diplom.de. This book was released on 2010-03-25 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: Inhaltsangabe:Abstract: Chapter 1: In this thesis we investigate the optical properties of self-assembled quantum dots exposed to a lateral electric field. As a result of the electric field the wave functions of electrons and holes inside the quantum dot are manipulated, which makes it possible to tune their energy levels and control the optical properties of the system. The possibility of tuning the emission energy of different few particle states using this method makes this system very promising for the use of a source of polarization entangled photons as discussed in the following sections. In Section 1.1 the concept of entangled states is introduced together with a brief historical overview. The possibility of using the exciton biexciton cascade of a self-assembled quantum dot for the generation of entangled photon pairs is presented in Section 1.2. Chapter 2: In this chapter we introduce the concept of quantum dots and demonstrate their optical emission properties. In Section 2.1 the quantum dot is introduced as a three-dimensional charge carrier trap. Several types of quantum dots are presented in an overview. In Section 2.2 we discuss the physical effects that occur on the way from bulk semiconductor material to the three-dimensional charge carrier confinement in the case of quantum dots. The growth of self-assembled quantum dot samples is the topic of Section 2.3, where the technique of molecular beam epitaxy is introduced (Section 2.3.1). This technique is used to grow the semiconductor quantum dots via heteroepitaxy in the Stranski-Krastanov growth mode (Section 2.3.2). Quantum dots are commonly referred to as artificial atoms due to their atomlike emission features. The origin for this expression is explained in Section 2.4 on the basis of the energetic structure of self-assembled quantum dots. The optical properties of quantum dots are discussed in Section 2.5, beginning with an introduction to the experimental setup that has been used to investigate the quantum dots during this thesis (Section 2.5.1). Different optical excitation modes are presented in Section 2.5.2 and in Section 2.5.3 we discuss, how to achieve a low enough quantum dot density on the analyzed samples. Section 2.5.4 deals with the photoluminescence of different exciton states and in Section 2.5.5 we present how these lines can be identified via power dependent measurements. Finally, the concept of initial charges in self-assembled quantum dots is presented in [...]

Download or read book CdTe ZnTe Quantum Dots Growth and Optical Properties written by Sebastian Mackowski and published by . This book was released on 2002 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper gives an overview of molecular beam epitaxy (MBE) growth of and the optical properties of Cadmium Telluride (CdTe) quantum dots grown on Zinc Telluride (ZnTe) by self-assembly. It is shown that quantum dots in this material system can be obtained either by depositing CdTe at a high substrate temperature or by subjecting CdTe layer to a healing process, up to 70 seconds long before its capping or, eventually, by applying these two methods simultaneously. Moreover, it is found that one can also use the atomic layer epitaxy method to achieve the formation. From optical measurements performed on large quantum dot ensembles it is found that the quantum dot emission is much broader than that of quantum wells, and that it is observable up to much higher temperatures, which indicates strong exciton localization. The latter is also evidenced by an insensitivity of the decay time of the exciton recombination (^3O0 ps) to the temperature. From the presence of a second, very long decay time (^5 ns) and from disappearance of the sharp lines related to recombination in single dots, the acoustic phonon scattering of excitons is found to play an important role in these quantum dot structures. From a magnetic field dependence of the single dot emission energy, the exciton effective g-factor and spatial extension of the exciton wave function are deduced to be equal to -3 and 3 nanometers, respectively. Both the g-factor and the value of the diamagnetic shift are found to be independent of the energy of the quantum dot emission at Beta=Omicron Tau and of the in-plane symmetry of its potential. (11 figures, 35 refs.).

Download or read book Self Assembled InGaAs GaAs Quantum Dots written by Mitsuru Sugawara and published by Academic Press. This book was released on 1999-03-22 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field. The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future. The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.

Download or read book Growth and Optical Properties of Self assembled GaSb GaAs Quantum Dots written by Mazliana Ahmad Kamarudin and published by . This book was released on 2010 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantum Dots written by Elena Borovitskaya and published by World Scientific. This book was released on 2002-07-08 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, leading experts on quantum dot theory and technology provide comprehensive reviews of all aspects of quantum dot systems. The following topics are covered: (1) energy states in quantum dots, including the effects of strain and many-body effects; (2) self-assembly and self-ordering of quantum dots in semiconductor systems; (3) growth, structures, and optical properties of III-nitride quantum dots; (4) quantum dot lasers.

Download or read book Self Assembled Quantum Dots written by Zhiming M Wang and published by Springer Science & Business Media. This book was released on 2007-11-29 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

Download or read book Investigations of Electronic Structure and Optical Properties of Ii Vi Self assembled Quantum Dots written by Tuan Anh Nguyen and published by . This book was released on 2006 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, we use different optical and imaging spectroscopy techniques to study electronic structure and optical properties of CdTe/ZnTe and CdSe/ZnSe self-assembled quantum dots (SAQDs). We perform single dot photoluminescence excitation experiments to identify carrier excitation mechanisms in CdTe/ZnTe QDs. The first mechanism is direct excitation into the QD excited states followed by relaxation to the ground state and the second mechanism is direct excitation into the QD ground states through LO phonon-assisted absorption. We then execute resonant PL measurements for both CdTe and CdSe QD ensembles to study the dependence of exciton-LO phonon coupling on QD size in these II-VI SAQDs. We shown that the strength of exciton-LO phonon coupling increases significantly for QDs with lateral sizes smaller than the exciton Bohr radius (e.g. as-grown CdTe QDs) while for larger QDs (e.g. CdSe or CdTe annealed) it is almost independent of the QD emission energy, and therefore presumably of the QD size. In order to study electronic coupling between SAQDs, we setup imaging experiments with the use of a hemisphere solid immersion lens. While the PLE imaging measurements show the existence two-dimensional platelets with a typical size of about 500 nm which provide spatially extended but strong localized states through which different QDs could be populated simultaneously, the spatially resolved imaging data demonstrates a complete 2D map of those platelets. These results are further supported by computational calculations based on finite element analysis. Low temperature exciton spin relaxation in symmetric CdTe SAQDs has been thoroughly studied by means of cw polarized magneto-PL and polarized time-resolved PL spectroscopies. We find that the degeneracy of exciton energy levels has a strong influence on the spin transition. When the exciton spin states in QDs are degenerate, the spin relaxation time is much shorter than the exciton recombination time. In contrast, if this degeneracy is removed, either by asymmetry or an external magnetic field, the spin relaxation time becomes much longer than the exciton recombination time. Using simple rate equation models, we estimate exciton spin relaxation times equal to 4.8 ns and 50 ps for non-degenerate and degenerate QD states, respectively.

Download or read book Fingerprints in the Optical and Transport Properties of Quantum Dots written by Ameenah Al-Ahmadi and published by BoD – Books on Demand. This book was released on 2012-06-13 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Fingerprints in the optical and transport properties of quantum dots" provides novel and efficient methods for the calculation and investigating of the optical and transport properties of quantum dot systems. This book is divided into two sections. In section 1 includes ten chapters where novel optical properties are discussed. In section 2 involve eight chapters that investigate and model the most important effects of transport and electronics properties of quantum dot systems This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Material Science, with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems.

Download or read book An Optical Study of the Electronic Structure of CdSe ZnSe and CdTe ZnTe Self Assembled Quantum Dots written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We study the excitonic structure and optical properties of single quantum dots in three different II-VI semiconductor structure systems: as-grown CdSe/ZnSe, as-grown CdTe/ZnTe, and annealed CdTe/ZnTe self-assembled quantum dots(QD) using photoluminescence(PL), micro-PL, micro-PL obtained using a sub-wavelength aperture, and PL images obtained using a Solid Immersion Lens (SIL). These experiments are performed both at zero field and magnetic field up to 3 Tesla. While in zero field, linear polarized PL are used to find exchange splitting and QD asymmetry direction of the three QD samples, in a 3 Tesla magnetic field, circular polarized PL is used to determine the g-factor and diamagnetic shift. With a solid immersion lens (SIL), we are able to directly image a large number of single QD at 6K with 400 nm spatial resolution. Using zero field measurements, we find that while the some of the QDs are symmetric, and emit completely unpolarized light, over half of the QDs are antisymmetric which are typically aligned along one of the in-plane crystallographic directions, and so emit linear polarized PL. Since polarization properties as well as spin properties such as exchange splitting, g-factor and diamagnetic coefficient are different from dot to dot due to their size and asymmetry variations, we have carried out a statistical study of these properties in order to understand what changes occur in the QDs between these three samples. The major result from this work shows that thermal annealing of CdTe dots significantly reduces the statistical variation of exchange splittings for asymmetric dots as well as the g-factors for symmetric dots. We infer that these changes result from enlargement of the CdTe dots due to interdiffusion of Zn between the barriers and the dots. This enlargement is reflected in the increase of the median distributions of the diamagnetic shifts. Moreover, in CdSe dots, where the dot size is comparable or slightly larger than the exciton Bohr diameter, we find that the variation of these parameters is reduced as well.

Download or read book Self Assembled InGaAs GaAs Quantum Dots written by and published by Academic Press. This book was released on 1999-04-05 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field. The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future. The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.

Download or read book Optical properties of self assembled In Ga As quantum dots written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Quantum Dots written by Yasuaki Masumoto and published by Springer Science & Business Media. This book was released on 2002-05-28 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth of Self Organized Quantum Dots / J.-S. Lee / - Excitonic Structures and Optical Properties of Quantum Dots / Toshihide Takagahara / - Electron-Phonon Interactions in Semiconductor Quantum Dots / Toshihide Takagahara / - Micro-Imaging and Single Dot Spectroscopy of Self Assembled Quantum Dots / Mitsuru Sugisaki / - Persistent Spectral Hole Burning in Semiconductor Quantum Dots / Yasuaki Masumoto / - Dynamics of Carrier Relaxation in Self Assembled Quantum Dots / Ivan V. Ignatiev, Igor E. Kozin / - Resonant Two-Photon Spectroscopy of Quantum Dots / Alexander Baranov / - Homogeneous Width of Confined Excitons in Quantum Dots - Experimental / Yasuaki Masumoto / - Theory of Exciton Dephasing in Semiconductor Quantum Dots / Toshihide Takagahara / - Excitonic Optical Nonlinearity and Weakly Correlated Exciton-Pair States / Selvakumar V. Nair, Toshihide Takagahara / - Coulomb Effects in the Optical Spectra of Highly Excited Semiconductor Quantum Dots / Selvakumar V. Nair / - Device ...

Download or read book Growth and Characterization of Self assembled Quantum Dots for Intermediate Band Solar Cells written by Meng Sun and published by . This book was released on 2013 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, Molecular Beam Epitaxy technology is presented in detail and several powerful characterization techniques such as XRD, AFM, TEM, PL are also reviewed. SAQDs are discussed to be applied in IBSCs application due to the formation of intermediate band which helps to absorb sub-band gap photons. We investigate how the structural and optical properties of InAs self-assembled quantum dots buried in AlAs0.56Sb0.44 barriers can be controlled through the use of thin GaAs1xSbx cladding layers. Structural and optical properties of the SAQDs are studied, and the characteristics we demonstrate for this quantum dot system show great potential for application in intermediate band solar cells.

Download or read book The Optical Response of Semiconductor Self Assembled Quantum Dots written by Zhifeng Wei and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "The Optical Response of Semiconductor Self-assembled Quantum Dots" by Zhifeng, Wei, 魏志鋒, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled THE OPTICAL RESPONSE OF SEMICONDUCTOR SELF-ASSEMBLED QUANTUM DOTS Submitted by Wei Zhifeng for the degree of Doctor of Philosophy at The University of Hong Kong in May 2006 Self-assembled quantum dots (QDs) are one type of tiny coherent islands which spontaneously form via the Stranski-Krastanow (S-K) growth mode during the heteroepitaxial growth of lattice-mismatched thin films. They have attracted considerable interest in recent years because of their atom-like properties and many potential applications in novel electronic and photonic devices. A detailed investigation on the optical properties of semiconductor QDs was presented in this thesis project. The variable-temperature photoluminescence (PL) spectra of two kinds of InGaAs QDs with and without a GaAs cap layer were comparatively investigated. It was found that the optical properties of the buried QDs with the cap layer differ significantly from those of the surface QDs. The growth of cap layer can improve the dots uniformity indicated by the narrow PL peak, greatly enhance the luminescence efficiency, and result in a large blueshift of the emission peak due to the strain environment change of the QDs. The cap layer also improves the thermal stability of the QD emission. The spontaneous emission mechanisms of two quaternary self-assembled GaInAsN QDs with different compositions and growth thicknesses have been studied. Adopting a newly developed localized-states luminescence model, the temperature behavior of the emissions from the two GaInAsN QDs has been quantitatively interpreted. The physical pictures of the spontaneous emissions of GaInAsN QDs were established. For the self-assembled QDs, a strained thin layer underneath the QDs always exists and this two-dimensional thin layer is called the wetting layer (WL). A quantitative study on the role of WL in the luminescence process of InAs/GaAs self- assembled QDs has been conducted. It has been shown that the WL acts as an efficient bridge not only in the relaxation of carriers from the barrier layer to the QDs but also in the thermal escaping of the carriers already captured by the QDs. Since the knowledge of electronic structure and optical transitions of self- assembled QDs is essentially important for the infrared detection applications of the QDs, a precise PL spectroscopic probe of the electronic structures of InAs/GaAs QDs with various silicon doping concentrations has been carried out. The theoretical predicted blueshift of the fundamental transitions of the QDs has been observed as the Si doping concentration and thus the number of electrons loaded into the dot is increased. It was also found that the Si δ-doping at the central regions of barrier layers during the growth of multi-layered QDs can significantly improve the luminescence efficiency of the samples at higher temperatures. Growth and optical characterizations of the electrically coupled InAs and InP QD stacking structures have been done. The study provides a possible way to produce a new type of broad-band QD light emitting diodes via the so-called band-engineering method. DOI: 10.5353/th_b3709820 Subjects: Quantum dots Semiconductors - Optical properties

Download or read book Quantum Dots written by Elena Borovitskaya and published by World Scientific Publishing Company Incorporated. This book was released on 2002-01-01 with total page 205 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, leading experts on quantum dot theory and technology provide comprehensive reviews of all aspects of quantum dot systems. The following topics are covered: (1) energy states in quantum dots, including the effects of strain and many-body effects; (2) self-assembly and self-ordering of quantum dots in semiconductor systems; (3) growth, structures, and optical properties of III-nitride quantum dots; (4) quantum dot lasers.