Download or read book Selective area epitaxial growth of iii v semiconductor structures for optoelectronic applications written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A integração monolítica de um modulador com um guia de onda é de muito interesse para aplicação em comunicações ópticas pelo fato de que podemos diminuir as perdas por acoplamento óptico entre os dois dispositivos e usar moduladores curtos que operem em altas taxas de transmissão de dados. O crescimento epitaxial seletivo é uma das técnicas mais promissoras na atualidade para aplicação na integração monolítica de dispositivos semicondutores. Esta técnica permite controlar a espessura e a tensão das camadas crescidas seletivamente permitindo otimizar a integração e as características das estruturas dos dispositivos. A tese trata da implementação, do estudo e da aplicação do crescimento epitaxial seletivo por MOCVD de estruturas casadas e tensionadas de poços quânticos múltiplos de InGaAs/InAlAs para a fabricação de moduladores de amplitude baseados no efeito Stark e sua integração com guias de onda. O desempenho dos moduladores, baseados em estruturas de poços quânticos múltiplos de InGaAs/InAlAs que operam em 1,55 ym, é notavelmente melhorado quando é introduzida uma composição de 52% de Ga na liga e se tem um poço de ~100 A de espessura. Nesse caso, os moduladores possuem uma elevada figura de mérito e podem ser insensíveis à polarização. Nesse estudo foram crescidas várias amostras onde foi analisado o aumento na taxa de crescimento e a variação na composição das ligas de InGaAs e InAlAs em material bulk e em poços quânticos de InGaAs/InAlAs em função da geometria da máscara utilizada, i.e. diferentes larguras do dielétrico e largura da janela onde ocorre o crescimento fixo. Finalmente foram processados guias de onda cujas estruturas foram crescidas com a técnica de crescimento seletivo. Esses guias foram caracterizados por técnicas de campo próximo.
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Proceedings of the Symposium on III V Opto Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photo Assisted Epitaxial Growth for III V Semiconductors Selective Area Epitaxy written by and published by . This book was released on 1995 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated laser-enhanced growth of GaAs by metal-organic molecular beam epitaxy (MOMBE) with triethylgallium (TEGa) and solid arsenic and by chemical beam epitaxy (CBE) with TEGa and a safer, alternative organometallic precursor, tris dimethylaminoarsenic (TDMAAs), to the highly toxic arsine. We discovered that with TDMAAs we can increase the laser-enhanced growth temperature window by 100 deg C, as compared to that with arsine or arsenic. CBE growth of InP and InGaP using tris- dimethylaminophosphorus (TDMAP) and tertiarybutylphosphine (TBP) is also reported. We discovered the etching effect of TDMAAs and TDMAP, and investigated laser-enhanced etching of GaAs by TDMAAs. We also investigated laser-enhanced carbon and silicon doping in GaAs with diiodomethane (CI2H2) and disilane, respectively. We can achieve a two-order-of-magnitude enhancement in p-type carbon doping with CI2H2 by laser irradiation. Finally, we report on lateral bandgap variation by laser-modified compositional change in InGaAs/GaAs multiple quantum wells grown by MOMBE and CBE. jg p.3.
Download or read book Liquid Phase Epitaxial Growth of III V Compound Semiconductor Materials and Their Device Applications written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Download or read book High Purity Vapor Phase Epitaxial Growth and Optoelectronic Applications of III V Semiconductor Compounds written by Jose Antonio Aguilar Amoros and published by . This book was released on 1985 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Epitaxial Growth Processes written by Chris J. Palmstrøm and published by . This book was released on 1994 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Nanostructures for Optoelectronic Devices written by Gyu-Chul Yi and published by Springer Science & Business Media. This book was released on 2012-01-13 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
Download or read book Epitaxial Microstructures written by and published by Academic Press. This book was released on 1994-09-15 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. - Atomic-level control of semiconductor microstructures - Molecular beam epitaxy, metal-organic chemical vapor deposition - Quantum wells and quantum wires - Lasers, photon(IR)detectors, heterostructure transistors
Download or read book Epitaxy of Semiconductors written by Udo W. Pohl and published by Springer Nature. This book was released on 2020-07-20 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
Download or read book Progress in Compound Semiconductors III Electronic and Optoelectronic Applications Volume 799 written by Daniel J. Friedman and published by . This book was released on 2004-04-07 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
