Download or read book Schottky Barrier Diode Fabrication on N GaN for Altraviolet Detection written by Mmantsae Moche Diale and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: There are many potential areas for the utilization of GaN-based nitride materials, including ultraviolet photodetectors. Ultraviolet photodetectors are used in the military for missile plume detection and space communications. Medically, ultraviolet photodiodes are used in monitoring skin cancer. Schottky barrier metal-semiconductor contacts are choice devices for the manufacture of ultraviolet photodiodes due to higher short wavelength sensitivity and fast response. They also require simple fabrication technology: suffer lower breakdown voltages, and record larger leakage currents at lower voltages as compared to p-n structures of the same semiconductor material. Thus the formation of a Schottky contact with high barrier height, low leakage current, and good thermal stability in order to withstand high temperature processing and operation are some of the most important factors in improving the performance of Schottky barrier photodiodes to be used for ultraviolet detection. The first stage of this study was to establish a chemical cleaning and etching technique. It was found that KOH was suitable in reducing C from the surface and that (NH4)2S further reduced the surface oxides. The next phase of the work was to select a metal that will allow UV light to pass through at a high transmission percentage: a combination of annealed Ni/Au was found to be ideal. The transmission percentage of this alloy was found to be above 80%. The next phase was the fabrication of Ni/Au Schottky barrier diodes on GaN to study the electrical characteristics of the diodes. Electrical characterization of the diodes showed that the dominant current transport mechanism was thermionic emission, masked by the effects of series resistance, which resulted from the condition of the GaN surface. Finally, we fabricated GaN UV photodiodes and characterized them in the optoelectronic station designed and produced during this research. Device responsivity as high as 31.8 mA/W for GaN and 3.8 mA/W for AlGaN were recorded. The calculated quantum efficiencies of the photodiodes were 11 % for GaN and 1.7 % for AlGaN respectively.

Download or read book Schottky Barrier Diode Fabrication on N GaN for Ultraviolet Detection written by Mmantsae Moche Diale and published by . This book was released on 2009 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III N Ultraviolet Detectors for Space Applications written by and published by Pawel E. Malinowski. This book was released on with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.

Download or read book JJAP written by and published by . This book was released on 2006 with total page 1282 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications written by Yogesh Kumar Sharma and published by BoD – Books on Demand. This book was released on 2018-09-12 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Download or read book Schottky Barriers written by Saul T. Redd and published by Nova Science Publishers. This book was released on 2020-10-28 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers. Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO. Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models. In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics"--

Download or read book Gallium Oxide written by Stephen Pearton and published by Elsevier. This book was released on 2018-10-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact

Download or read book Handbook of Transparent Conductors written by David S. Ginley and published by Springer Science & Business Media. This book was released on 2010-09-11 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent conducting materials are key elements in a wide variety of current technologies including flat panel displays, photovoltaics, organic, low-e windows and electrochromics. The needs for new and improved materials is pressing, because the existing materials do not have the performance levels to meet the ever- increasing demand, and because some of the current materials used may not be viable in the future. In addition, the field of transparent conductors has gone through dramatic changes in the last 5-7 years with new materials being identified, new applications and new people in the field. “Handbook of Transparent Conductors” presents transparent conductors in a historical perspective, provides current applications as well as insights into the future of the devices. It is a comprehensive reference, and represents the most current resource on the subject.

Download or read book Semiconductor Surface Passivation and Metallization for Schottky Diodes written by Alex Molina and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into gallium nitride (GaN) has borne fruit and holds further promise for the optoelectronics and electronics industries. Among the fields of active research is exploiting GaN for power electronics, with one example being Schottky barriers as power rectifiers. However, one challenge in implementing GaN-based technologies arises from the device processing and choices involved when fabricating metal/semiconductor contacts. Consequently, a study of metallizations to GaN based on thermodynamics with careful selection of the surface treatment and deposition techniques is of the upmost importance. The first objective of this dissertation was to understand the role of HBr in lessening the contaminants on various semiconductor surfaces. Motivated initially a need to passivate Ge nanostructures, HBr vapor was used to remove the native oxide and passivate a Ge wafer, and x-ray photoelectron spectroscopy (XPS) was used to study the surface. For exposures of at least 20 min above the 48% HBr solution, we found a clear reduction in the amount of oxide present. Interestingly, stability against reoxidation in air was greatly improved using longer exposures to HBr vapor, and XPS reveals that bromine is adsorbed onto these surfaces, suggesting that it is physically blocking H2O and O2 molecules from coming into contact and reoxidizing the Ge surface. Given its success as a surface treatment, aqueous HBr was also tested on GaN. The GaN surfaces, examined by XPS, exhibited no noticeable difference in C and O surface contaminants between HBr and HCl, which is widely used for cleaning GaN surfaces. This finding enhanced our confidence in the efficacy of using HCl for surface preparation. The main objective of this dissertation was to choose a pure transition metal, metal alloy, and compound metallization for GaN based on their thermodynamic stability against metallurgical reactions, high work functions, and conductivity. The only pure transition metal in thermodynamic equilibrium with GaN is rhenium (Re). Prior work on Re/n-GaN has demonstrated diodes with good thermal stability, but the diodes were not as high in quality as the ones produced in this dissertation, due in part to improved crystal growth technology as well as improvements in device processing in this dissertation. Re diodes were fabricated to study the effects of deposition, processing, and annealing on the electrical characteristics of the diodes. As-deposited diodes varied dramatically depending on deposition technique. Electron-beam evaporated Re/Au diodes consistently demonstrated low ideality factors (1.02-1.04) and high barrier heights (0.72-0.82 eV), whereas sputtered Re diodes had high ideality factors (1.26-1.73) and low barrier heights (0.38-0.41 eV), likely due to process-induced defects. However, a remarkable improvement was observed in their electrical characteristics when annealed at 500°C for 5 min in which the barrier height improved to 0.74 eV and the ideality factor to 1.02. Compared to baseline palladium (Pd) diodes fabricated on a similar substrate, the Re diodes were more resilient against annealing conditions that degrade their Pd counterparts. Pd diodes consistently showed degradation after a mild thermal excursion (250°C for 2 h) during dielectric deposition, where the barrier height changed from 0.99 eV to 0.92 eV and ideality factor from 1.02 to 1.13. After annealing at 600°C for 5 min (as a direct comparison to Re diodes) the Pd diodes' barrier height changed from 0.92 eV to 0.86 eV and ideality factor changed from 1.13 to 1.56, whereas the Re diodes remained stable. Stacked layers of Ni and Ga were also pursued as a metal gallide metallization given past success of nickel gallide contacts surviving high temperatures better than pure Ni contacts. However, preliminary current-voltage (I-V) characteristics found that our diodes degraded after annealing at 400°C and 600°C, which may be due to the inhomogeneity in Ga deposition, since Ga deposits with an uneven morphology. With some regions containing more Ga than others, Ni may still react in patches. This inhomogeneity across that diode resulted in low barrier heights and high ideality factors. Therefore, it was deemed beneficial to choose another contact to study. MoCxNy diodes deposited via remote plasma atomic layer deposition (PE-ALD) were also investigated as an attractive compound candidate. Not only is MoNx conductive, refractory, and thermally stable on GaN, it has a high work function and exhibits good adhesion to GaN. Films were examined by XPS, grazing incidence x-ray diffraction (GIXRD), and transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) to determine their composition and structure. TEM reveals an abrupt interface between MoCxNy and n-GaN, and that MoCxNy adopts a cubic phase. Remarkably, XPS also shows a significant amount of carbon within the single cubic phase. It is hypothesized that our single-phase MoC0.3N0.7 film is a cubic NaCl-type structure with a lattice parameter of 0.42 nm that has C and N atoms occupying half of the sites on one sublattice. The incorporation of C in our film, and its occupation in the cubic crystal, could be playing a role in improving the electrical characteristics. The diodes demonstrated high barrier height (0.87 eV) after an anneal at 600°C for 5 min, with an ideality factor of 1.02 by I-V measurements, revealing potential for a thermally stable Schottky diode. The conclusions drawn and experiments developed augment the understanding of device fabrication, metallization, and processing for contacts to n-GaN applications for high-temperature and high-power electronics.

Download or read book Light Emitting Diodes and Photodetectors written by Maurizio Casalino and published by BoD – Books on Demand. This book was released on 2021-09-29 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed overview of the most recent advances in the fascinating world of light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), and photodetectors (PDs). Chapters in Section 1 discuss the different types and designs of LEDs/OLEDs and their use in light output, color rendering, and more. Chapters in Section 2 examine innovative structures, emerging materials, and physical effects of PDs. This book is a useful resource for students and scientists working in the field of photonics and advanced technologies.

Download or read book Gallium Nitride GaN II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Download or read book Group III Nitride Semiconductor Optoelectronics written by C. Jayant Praharaj and published by John Wiley & Sons. This book was released on 2023-10-11 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-Nitride Semiconductor Optoelectronics Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. C. Jayant Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Chapters provide thorough connections between theory and experimental advances for optoelectronics and photonics. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III- nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1502 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of II VI Semiconductor Based Sensors and Radiation Detectors written by Ghenadii Korotcenkov and published by Springer Nature. This book was released on 2023-02-02 with total page 527 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.

Download or read book Wiley Survey of Instrumentation and Measurement written by Stephen A. Dyer and published by John Wiley & Sons. This book was released on 2004-04-07 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt: In-depth coverage of instrumentation and measurement from the Wiley Encyclopedia of Electrical and Electronics Engineering The Wiley Survey of Instrumentation and Measurement features 97 articles selected from the Wiley Encyclopedia of Electrical and Electronics Engineering, the one truly indispensable reference for electrical engineers. Together, these articles provide authoritative coverage of the important topic of instrumentation and measurement. This collection also, for the first time, makes this information available to those who do not have access to the full 24-volume encyclopedia. The entire encyclopedia is available online-visit www.interscience.wiley.com/EEEE for more details. Articles are grouped under sections devoted to the major topics in instrumentation and measurement, including: * Sensors and transducers * Signal conditioning * General-purpose instrumentation and measurement * Electrical variables * Electromagnetic variables * Mechanical variables * Time, frequency, and phase * Noise and distortion * Power and energy * Instrumentation for chemistry and physics * Interferometers and spectrometers * Microscopy * Data acquisition and recording * Testing methods The articles collected here provide broad coverage of this important subject and make the Wiley Survey of Instrumentation and Measurement a vital resource for researchers and practitioners alike

Download or read book III Nitride Ultraviolet Emitters written by Michael Kneissl and published by Springer. This book was released on 2015-11-12 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.